WILLAS SOTXXC

WILLAS
FM120-M+
SOTxxC THRU
FM1200-M+
Dual Transient Voltage Suppressors Array for ESD Protection
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
General
Description
optimize
board space.
Features
Low power
loss, high
•The
SOTxxC
is aefficiency.
dual monolithic voltage
• High current capability, low forward voltage drop.
suppressor designed to protect components which
• High surge capability.
are •connected
data and
transmission lines
Guardring fortoovervoltage
protection.
Ultra
high-speed
switching.
•
against ESD. It clamps the voltage just above the
• Silicon epitaxial planar chip, metal silicon junction.
logic• level
supply
positive
transients
and to
Lead-free
partsfor
meet
environmental
standards
of a
MIL-STD-19500
/228
diode drop below ground for negative transients. It
• RoHS product for packing code suffix "G"
can also
work
as bidirectional
suppressor
by
Halogen
free product
for packing code
suffix "H"
z
0.146(3.7)
2 Unidirectional Transil functions
0.130(3.3)
z
Low leakage current: IR max< 20 μA at VRM
z
300W peak pulse power(8/20μs)
z
Transient protection for data lines as per
z
Pb-Free package is available
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical
connecting
only pin1 data
and 2.
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
Complies with the following standards
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
Applications
,
IEC61000-4-2
•
Terminals
:Plated
terminals,
solderable
per
MIL-STD-750
z Computers
Level 4 15 kV (air discharge)
Method 2026
z Printers
Dimensions
in inches and (millimeters)
• Polarity : Indicated by cathode band
8 kV(contact
discharge)
z Communication systems
• Mounting Position : Any
MIL STD 883E - Method 3015-7 Class 3
• Weight : Approximated 0.011 gram
25 kV HBM (Human Body Model)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Functional diagram
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
12
20
VRRM
Maximum Recurrent Peak Reverse Voltage
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
SOT-23
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Absolute Ratings (Tamb=25°C )
Storage Temperature Range
Symbol
PPP
1.0
30
RΘJA
Typical Thermal Resistance (Note 2)
-55 to +125
F
temperature Vfor
℃
-55 to +150
- 65 to +175
Value
Units
2600.85
°C
-55 to +155
°C
-40 to +125
°C
150
°C
IEC61000-4-2 air discharge
15
kV
IEC61000-4-2 contact discharge
8
TL
Maximum lead
T
Storage Temperature
RangeIR
@T A=125℃
Top
A
(tp = 8/20μs)
350 FM1100-MHW
FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
soldering
Rated DCstg
Blocking Voltage
NOTES:
TSTG
Maximum Average Reverse Current at @T A=25℃
A
40
120
Parameter
Peak Pulse Power
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Operating Temperature Range
Tj at 1 MHZ Maximum
junction
1- Measured
and applied reverse
voltagetemperature
of 4.0 VDC.
13
30
during0.50
10s
0.70
0.5
10
0.9
0.92
U
V
m
2- Thermal Resistance From Junction to Ambient
2012-09
Electrostatic discharge
VPP
2012-06
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SOTxxC THRU
FM1200-M+
Dual Transient
Voltage Suppressors Array for ESD Protection
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
Electrical
Parameter
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
Symbol
Parameter
capability, low forward voltage drop.
• High current
Maximum Reverse Peak Pulse
IPP surge capability.
• High
Current
• Guardring for overvoltage protection.
V
Clamping
Voltage @ IPP
C high-speed
switching.
• Ultra
epitaxial
planar
chip,
metal silicon
junction.
•VSilicon
Working
Peak
Reverse
Voltage
RWM
• Lead-free parts meet environmental standards of
Maximum
MIL-STD-19500
/228 Reverse Leakage Current
IR
@
V
RoHS
product
for
packing
code suffix "G"
RWM
•
Halogen
free
product
for
packing
code suffix "H"
IT
Test Current
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
VBR
Breakdown Voltage @ IT
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Electrical Characteristics
• Polarity : Indicated by cathode band
VBR
• Mounting Position : Any
: Approximated
Part• Weight
Numbers
Min. 0.011 gram
Typ.
Dimensions in inches and (millimeters)
IT
Max.
VRWM
IR
Ratings at 25℃ ambient temperature unless otherwise specified.
Single SOT05C
phase half wave, 60Hz,
load. 7.4
6.0resistive of inductive
6.7
For capacitive load, derate current by 20%
SOT12C
13.3
14.0
16.7
17.4
RATINGS
SOT15C
Marking Code
14.7
18.1
VRRM
13
30
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Rectified Current
IO
IFSM
Typical Characteristics
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
µA
pF
1
5.0
1
30
1
12.0
1
25
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
12
20
Maximum
Peak
Reverse
1).8/20Recurrent
waveform
used.
(seeVoltage
fig2.)
Typ. 0v
bias
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
V
V
V
mA
V
C
1
15.0
14
40
15
50
16
60
18
80
21
28
35
42
56
30
40
50
60
80
1
10
100
25
115
150
120
200
V
70
105
140
V
100
150
200
V
1.0
30
40
120
-55 to +125
A
A
℃
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
0.50
0.70
IR
0.85
0.5
0.9
0.92
V
10
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Fig1. Peak Pulse Power VS Pulse Time
2012-09
2012-06
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SOTxxC THRU
FM1200-M+
Dual Transient
Voltage Suppressors Array for ESD Protection
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
Pulse
Fig3.Power Derating Curve
0.024(0.6)
UL94-V0
ratedWaveform
flame retardant
• Epoxy : Fig2.
Application
Note
plastic, SOD-123H
• Case : Molded
0.031(0.8) Typ.
0.031(0.8) Typ.
,
•Electrostatic
Terminals :Plated
terminals,
solderable
per
MIL-STD-750
discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage
Method 2026
Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
transient to a low enough level such that damage to the protected semiconductor is prevented.
• Mounting Position : Any
Surface mount TVS arrays offer the best choice for minimal lead inductance. They serve as parallel
• Weight : Approximated 0.011 gram
protection elements, connected between the signal line to ground. As the transient rises above the operating
MAXIMUM
RATINGS
AND
ELECTRICAL
CHARACTERISTICS
voltage of the
device, the
TVS array
becomes
a low impedance
path diverting the transient current to ground.
Ratings at 25℃ ambient temperature unless otherwise specified.
The SOTxxC array is the ideal board evel protection
Single phase half wave, 60Hz, resistive of inductive load.
The tiny
package
allows design flexibility
For capacitive
load,SOT-23
derate current
by 20%
of ESD sensitive semiconductor components.
in the design of high density boards where the space
saving is at a premium.
the routing and contributes to hardening against ESD.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGSThis enables to shorten
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
1.0
30
40
120
-55 to +125
A
A
℃
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
V
10
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SOTxxC THRU
FM1200-M+
Dual Transient Voltage Suppressors Array for ESD Protection
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
SOT-23
mechanical
data
loss, high efficiency.
• Low power
0.146(3.7)
0.130(3.3)
.106(2.70)
Halogen free product for packing code suffix "H"
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011
gram
.080(2.04)
.086(2.20)
Mechanical data
0.071(1.8)
0.056(1.4)
.110(2.80)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
0.012(0.3) Typ.
.006(0.15)MIN.
.063(1.60)
.047(1.20)
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
of
• Lead-free parts meet environmental standards
.122(3.10)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
.008(0.20)
.003(0.08)
.070(1.78)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
Marking Code
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
.004(0.10)MAX.
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
.020(0.50)
.013(0.35)
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
1.0
30
40
120
Dimensions
in inches
(millimeters)
-55 and
to +125
TJ
Operating Temperature Range
Storage Temperature Range
A
A
℃
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
Marking
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Type number
@T A=125℃
0.50
0.70
0.85
0.5
IR
Marking code
0.9
0.92
V
10
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
SOT05C
SOT12 C
05C/2AC
12C/4AC
SOT15C
15C/5AC
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.