WILLAS FM120-M+ 9013xLT1 THRU FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline NPN Silicon Features • Batch process design, excellent power dissipation offers FEATURE reverse leakage currentcompliance and thermal resistance. We declarebetter that the material of product with RoHS requirements. Low profile surface mounted application in order to Pb-Free •package is available SOD-123H optimize board space. RoHS product for packing code suffix ”G” loss, high efficiency. • Low power Halogen •free product for packing suffix “H” High current capability, code low forward voltage drop. 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Moisture •Sensitivity 1 High surgeLevel capability. DEVICE•MARKING ORDERING INFORMATION Guardring forAND overvoltage protection. SOT-23 • Ultra high-speed switching. Device Marking Shipping • Silicon epitaxial planar chip, metal silicon junction. 9013PLT1 13P 3000/Tape&Reel • Lead-free parts meet environmental standards of MIL-STD-19500 /228 9013Q LT1 13Q 3000/Tape&Reel • RoHS product for packing code suffix "G" 9013RLT1 3000/Tape&Reel Halogen free product 13R for packing code suffix "H" data 13S 3000/Tape&Reel ry 9013SMechanical LT1 • Epoxy : UL94-V0 rated flame retardant : Molded plastic, SOD-123H • Case MAXIMUM RATINGS , • Terminals solderable per MIL-STD-750 Symbol Value Unit Rating :Plated terminals, ina 20 V 40 V 5 V 500 mAdc 0.040(1.0) 0.024(0.6) 3 COLLECTOR 0.031(0.8) Typ. 1 BASE Dimensions in inches and (millimeters) im Method 2026 Collector-Emitter Voltage VCEO • Polarity : Indicated by cathode band Collector-Base Voltage VCBO • Mounting Position : Any Emitter-Base Voltage VEBO • Weight : Approximated 0.011 gram Collector current-continuoun IC 0.031(0.8) Typ. 0.071(1.8) 0.056(1.4) 2 EMITTER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS THERMAL CHARATEERISTICS Ratings at 25℃ Characteristic ambient temperature unless otherwise specified. Symbol Single phase half wave, 60Hz, resistive of inductive load. Total Device Dissipation FR-5 Board, (1) PD For ocapacitive load, derate current by 20% TA=25 C Pr el o Derate above 25 C Marking Code Max RATINGS 225 mW SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN o 1.8 Thermal Resistance, Junction to Ambient Maximum Recurrent Peak Reverse Voltage θ JA VRRRM 12 20 556 30 Total DeviceRMS Dissipation Maximum Voltage PD VRMS 14 21 o Maximum DC Blocking Alumina Substrate, (2) TVoltage A=25 C VDC 20 300 30 Maximum Average Derate above 25 C Forward Rectified Current IO R θJA IFSM o Thermal Resistance, Junction to Ambient Peak Forward Surge Current 8.3 ms single half sine-wave Junction and Storage superimposed on rated Temperature load (JEDEC method) Tj ,Tstg DEVICE MARKING Typical Thermal Resistance (Note 2) RΘJA Typical Junction Capacitance (Note 1) 9013QLT1=13Q 9013RLT1=13R Operating Temperature Range Unit C 40/W 14 15 50 16 60 18 80 10 100 115 150 120 200 Vo 28 35 42 56 70 105 140 Vo 40 mW 50 60 80 100 150 200 Vo o 1.0 30 mW/oC 2.4 o C/ W 417 o C -55 to +150 CJ 9013SLT1=13S TJ mW/ C 13 Characteristic CHARACTERISTICS OFF CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Emitter Cutoff Current (VEB=4V) 2012- -55 to +125 Min PF -55 to +150 Symbol ℃/ ℃ - 65 to +175 Typ ℃ Max Unit SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Collector-Emitter Breakdown Voltage Maximum Average Reverse Current at @T A=25℃ IR (IC=1.0mA) @T A=125℃ Rated DC Blocking Voltage Emitter-Base Breakdown Voltage (IENOTES: =100µA) Collector-Base Breakdown Voltage 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. (IC2=100µA) Thermal Resistance From Junction to Ambient Collector Cutoff Current (VCB=35V) Am 40 120 o Storage Temperature Range TSTG C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA=25 Am V(BR)CEO 0.50 0.70 20 - 0.5 V(BR)EBO 5 - V(BR)CBO 40 - ICBO IEBO - - 10 - 0.85 V 0.9 0.92 Vo mA - V - V 150 nA 150 nA WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 9013xLT1 THRU FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers ON CHARACTERISTICS better reverse leakage current and thermal resistance. DC Current profile surface mounted application in order to • LowGain optimize board space. (IC=50mA, VCE=1V) Low power loss, high efficiency. • Collector-Emitter Saturation Voltage • High current capability, low forward voltage drop. (IC=500mA,IB=50mA) • High surge capability. • Guardring for overvoltage protection. switching. • Ultra high-speed NOTE: * P Q • Silicon epitaxial planar chip, metal silicon junction. of • Lead-free parts HFE meet environmental 100~200 standards 150~300 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Hfe 100 - 600 0.146(3.7) 0.130(3.3) VCE(S) - R - 0.012(0.3) Typ. 0.6 V 0.071(1.8) 0.056(1.4) S 200~400 300~600 ry Mechanical data SOD-123H • Epoxy : UL94-V0 rated flame retardant SOT-23 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ina .006(0.15)MIN. 0.031(0.8) Typ. Method 2026 Dimensions in inches and (millimeters) im .063(1.60) .047(1.20) • Polarity : Indicated by cathode band .122(3.10) • Mounting Position : Any • Weight : Approximated 0.011 gram .106(2.70) RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI VRRM 12 20 13 30 14 40 15 50 16 60 Maximum RMS Voltage VRMS 14 21 28 35 Maximum DC Blocking Voltage VDC 20 30 40 50 Maximum Recurrent Peak Reverse Voltage .080(2.04) Maximum Average Forward Rectified Current .070(1.78) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature.004(0.10)MAX. Range 115 150 120 200 Volts 42 56 70 105 140 Volts 60 80 100 150 200 Volts Amp 30 40 120 -55 to +125 Amp ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 10 100 .008(0.20) TSTG CHARACTERISTICS 18 80 .003(0.08) 1.0 IO IFSM IR @T A=125℃.020(0.50) .012(0.30) NOTES: 0.50 .055(1.40) .035(0.89) .110(2.80) Pr el .083(2.10) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 0.70 0.85 0.9 0.92 0.5 10 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012- Dimensions in inches and (millimeters) WILLAS ELECTRONIC CORP. Volt mAm WILLAS General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ 9013xLT1 THRU FM1200-M Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) loss, high efficiency. • Low powerDevice PN Packing 0.130(3.3) low forward voltage drop. • High current capability, (2) (1) LT1 G ‐WS Tape&Reel: 3 Kpcs/Reel surge capability. • High9013 x Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. • (2) CLASSIFICATION OF h FE RANK Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) ina ry 0.012(0.3) Typ. 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** Pr el im WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 life‐saving implant or other applications intended for life‐sustaining or other related Operating Temperature Range TJ - 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Ratedsuch applications do so at their own risk and shall agree to fully indemnify WILLAS DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.