WILLAS SESD099

WILLAS
FM120-M+
SESD099-04AT1
THRU
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
4-CHANNEL LOW CAPACITANCE ESD PROTECTION
DIODES ARRAY
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
DESCRIPTIONS
• Low power loss, high efficiency.
low forward
drop.
• High current capability,
The SESD099-04AT1
is a 4-channel
ultravoltage
low capacitance
rail
• High surge capability.
clamp ESD protection diodes array. Each channel consists of
• Guardring for overvoltage protection.
diodes that
steer positive or negative ESD current
a pair• of
ESD
Ultra
high-speed
switching.
Silicon
epitaxial
planar
chip,rail.
metal
silicondiode
junction.
•
A zener
is integrated
to either the positive or negative
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
3
4
the positive and negative supply rails.
in to the
array between/228
MIL-STD-19500
5
for packing
suffix rail
"G" pin (assigned as GND)
In the• RoHS
typicalproduct
applications,
the code
negative
Halogen free product for packing code suffix "H"
is connected with system ground. The Positive ESD current is
0.012(0.3) Typ.
2
1
0.071(1.8)
0.056(1.4)
6
SOT-23-6
Mechanical data
steered to the ground through an ESD diode and Zener diode and
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
the positive ESD voltage is clamped to the zener voltage.
• Case : Molded plastic, SOD-123H
The 6(6'099-04AT1 is idea to protect high speed data lines. ,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
is provided
Three package type
Method
2026 for easy PCB layout.
• Polarity : Indicated by cathode band
• Mounting Position : Any
FEATURES
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
APPLICATIONS
* 4 channels of ESD protection;
* HDMI / DVI ports;
* Provides ESD protection to IEC61000-4-2 level 4
* Display Port interface;
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
- ±15kV
discharge
Single phase
halfair
wave,
60Hz, resistive of inductive load.
For capacitive
load,
derate
current by 20%
- ±8kV contact discharge;
SYMBOL
* Channel I/O toRATINGS
GND capacitance: 0.9pF(Max)
Marking
Code
* Channel
I/O to I/O capacitance: 0.45pF(Max)
Maximum Recurrent Peak Reverse Voltage
* Low clamping voltage;
VRRM
* 10M / 100M / 1G Ethernet;
* USB 2.0 interface;
FM150-MH
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
FM120-MH FM130-MH FM140-MH
* VGA
interface
12
20
13
30
14
15box; 16
* Set-top
40
50
60
18
80
10
100
* Flat panel Monitors / TVs;
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
* Low operating voltage;
* Improved zener structure;
Maximum Average Forward Rectified Current
* PC / Note book
IO
1.0
30
* Optimized package for easy high speed data
lines PCB layout;
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
* RoHS compliant.
Pb-Free
package
is
available
*
Typical Thermal Resistance (Note 2)
RΘJA
RoHS product for packing code suffix ”G”
Typical Junction Capacitance (Note 1)
CJ
Halogen free product for packing code suffix “H”
superimposed on rated load (JEDEC method)
TJ
Operating Temperature Range
Storage Temperature Range
A
A
40
120
-55 to +125
℃
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
ORDERING INFORMATION
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking
Voltage
Part No.
NOTES:
6(6'099-04AT1
@TPackage
A=125℃
SOT-23-6
IR
0.50
0.70
0.85
0.5
Marking
C96
Material
Halogen
10
0.9
0.92
V
Shipping
m
3000Tape&Reel
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SESD099-04AT1
THRU
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
PIN CONFIGURATION
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical
data
SOT-23-6
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• TerminalsMAXIMUM
:Plated terminals,
solderable per MIL-STD-750
ABSOLUTE
RATINGS
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Characteristics
• Polarity : Indicated
by cathode band
Peak
Pulse Power(8/20μs)
Position : Any
• Mounting
• Weight
: Approximated 0.011 gram
Peak
Pulse Current(8/20μs)
Symbol
Ratings
Unit
Dimensions in inches and (millimeters)
PPP
150
W
IPP
5
A
VESD1
±15kV
ESD per IEC
61000-4-2(Air)
MAXIMUM
RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings
25℃
temperature unless otherwise specified.
ESD at
per
IECambient
61000-4-2(Contact)
Single phase half wave, 60Hz, resistive of inductive load.
Operating Temperature Range
For capacitive load, derate current by 20%
Storage Temperature Range
RATINGS
VESD2
±8kV
kV
Topr
-55 ~ +125
°C
Tstg
-55 ~ +150
°C
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum
RMS VoltageCHARACTERISTICS(Tamb
VRMS
=25°C) 14
ELECTRICAL
21
28
35
42
56
70
105
140
V
20
30
40
50
100
150
200
V
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
Characteristics
Symbol
Maximum Average Forward Rectified Current
VRRM
VDC
Test Conditions
Min.
IO
Peak Forward Surge Current 8.3 ms singleV
half
sine-waveAny I/O pin to GND
RWM
IFSM
Voltage
60
Typ.
Reverse
Typical
ThermalBreakdown
Resistance (Note 2)
Typical
Junction Capacitance (Note 1)
Voltage
VBR
Reverse Leakage
IR
Storage Temperature Range
Current
CHARACTERISTICS
Positive Clamping
Maximum Forward Voltage at 1.0A DC
VC1
Voltage
Maximum
Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Negative
NOTES:
Clamping
J pin to GND
Any CI/O
@T A=125℃
VC2
2- Thermal Resistance From Junction to Ambient
Junction Capacitance
Between Channel
Junction Capacitance
Between I/O And GND
2012-09
2012-06
CJ1
CJ2
Unit
5
V
- 65 to +175
1
TSTG
Any I/O pin to GND
℃
V
-55 to +150
TJ
VRWM
=5V, T=25°C;
μA
IPPSYMBOL
=1A, tP=8/20Μs;
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF pulse;
Positive
0.50
0.70
8.5
IR pin to GND
Any I/O
Negative pulse;
0.5
12.0 0.85
V
0.9
0.92
U
V
m
10
IPP=1A, tP=8/20μS;
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Voltage
Max.
40
120
6
-55 to +125
Operating Temperature Range
t =1mA;
RΘJA
80
1.0
30
Reverse Working
superimposed on rated load (JEDEC method)
kV
1.8
V
Any I/O pin to GND
VR=0V, f=1MHz;
Between I/O pins
VR=0V, f=1MHz;
Any I/O pin to GND
0.35
0.45
pF
0.9
pF
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SESD099-04AT1
THRU
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY
Package outline
Features
• Batch process design, excellent power dissipation offers
TYPICAL
ELECTRICAL CHARACTERISTICS CURVE
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
1.0
30
40
120
-55 to +125
A
A
℃
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
V
10
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SESD099-04AT1
THRU
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
TYPICAL
ELECTRICAL
capability. CHARACTERISTICS CURVE
• High surge
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.110(2.80)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
.122(3.10)
RATINGS
Marking Code
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
40
120
-55 to +125
1.0
30
A
.070(1.75)
.098(2.50)
VRRM
.118(3.00)
Maximum Recurrent Peak Reverse Voltage
.051(1.30)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
SOT-23-6
For capacitive load, derate current by 20%
A
℃
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
.067(1.70)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
.083(2.10)
V
0.9
0.92
VF
0.50
0.70
0.85
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied
reverse voltage of 4.0 VDC.
.000(0.01)
.051(1.30)
2- Thermal Resistance From Junction
to Ambient
2012-09
.010(0.25)
.020(0.50)
2012-06
0.5
IR
10
m
.036(0.90)
.057(1.45)
Maximum Forward Voltage at 1.0A DC
.033(0.85)
.040(1.05)
Dimensions in inches and (millimeters)
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.