2SA1576AxT1 SOT-323 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES z Excellent hFE linearity SOT-323 z Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 1. BASE z Moisture Sensitivity Level 1 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 μA DC current gain hFE VCE=-6V,IC=-1mA Collector-emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance Cob 120 560 IC=-50mA,IB=-5mA -0.5 VCE=-12V,IC=-2mA,f=30MHz VCB=-12V,IE=0,f=1MHz 140 V MHz 4 5 pF CLASSIFICATION OF hFE Rank Range Marking 2012- Q R S 120-270 180-390 270-560 FQ FR FS WILLAS ELECTRONIC CORP. 2SA1576AxT1 SOT-323 Plastic-Encapsulate Transistors hFE Static Characteristic -7 COMMON EMITTER Ta=25℃ -20uA (mA) -6 -18uA Ta=100℃ hFE -5 -14uA -12uA -4 -10uA -3 -8uA -6uA -2 Ta=25℃ DC CURRENT GAIN IC -16uA COLLECTOR CURRENT IC —— 1000 100 -4uA -1 COMMON EMITTER VCE= -6V IB=-2uA -0 10 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VCEsat —— -10 VCE VBEsat —— BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -200 Ta=100℃ -100 Ta=25℃ -10 -100 COLLECTOR CURRENT Cob / Cib —— 50 -100 IC IC IC β=10 -800 Ta=25℃ -600 Ta=100℃ -400 -200 -0.1 -150 -150 (mA) -1000 β=10 -1 -10 IC -0 (mA) -1 -10 COLLECTOR CURRENT fT VCB / VEB —— IC (mA) -100 -150 IC 1000 (MHz) f=1MHz IE=0 / IC=0 TRANSITION FREQUENCY (pF) fT Ta=25℃ Cib 10 CAPACITANCE C -1 COLLECTOR CURRENT -300 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -12 (V) Cob 100 VCE=-12V Ta=25℃ 1 -0.1 10 -1 -10 REVERSE BIAS VOLTAGE PC COLLECTOR POWER DISSIPATION PC (mW) 250 —— V -20 -1 -30 -10 COLLECTOR CURRENT (V) IC (mA) Ta 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 2012- 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SA1576AxT1 THRU SOT-323 Plastic-Encapsulate Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-323 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .004(0.10)MIN. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" .054(1.35) .045(1.15) Mechanical data 0.012(0.3) Typ. .087(2.20) .070(1.80) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .096(2.45) .078(2.00) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code .056(1.40) Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 Maximum RMS Voltage VRMS 14 21 28 35 Maximum DC Blocking Voltage VDC 20 30 40 50 Maximum Average Forward Rectified Current IO IFSM .047(1.20) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) .004(0.10)MAX. Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range .010(0.25) .003(0.08) 18 10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 80 100 115 150 120 200 Volts 42 56 70 105 140 Volts 60 80 100 150 200 Volts 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS VF .016(0.40) IR @T A=125℃ .008(0.20) Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage NOTES: .043(1.10) .032(0.80) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC 0.50 0.70 0.85 0.9 0.92 0.5 Volts mAmps 10 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012- Rev.C WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SA1576AxT1 THRU SOT-323 Plastic-Encapsulate Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Pb Free Product Package outline SOD-123H • Low profile surface mounted application in order to optimize board space. Ordering Information: 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. low forward voltage drop. • High current capability, Device PN Packing • High surge capability. (2) (1) 2SA1576A x T1 G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection. 0.071(1.8) Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” high-speed switching. • Ultra 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. (2) CLASSIFICATION OF h FE RANK parts meet environmental standards of • Lead-free MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS Marking Codecontained are intended to provide a product description only. "Typical" parameters 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM which may be included on WILLAS data sheets and/ or specifications can Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Volts Maximum DC and do vary in different applications and actual performance may vary over time. Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Amps Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave use of any product or circuit. 30 IFSM Amps superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA PF 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT or indirectly cause injury or threaten a life without expressed written approval Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ of WILLAS. Customers using or selling WILLAS components for use in IR mAmps 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.