WILLAS FM120-M+ MMBT5401LT1 THRU High MOUNT Voltage Transistor FM1200-M+ 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURE • Low profile surface mounted application in order to ƽ Pb-Free package is available optimize board space. RoHS product for packing code suffix ”G” loss, high efficiency. • Low power capability, low forward voltage • High current Halogen free product for packing codedrop. suffix “H” ƽ Moisture capability. • High surge Sensitivity Level 1 • Guardring for overvoltage protection. • Ultra high-speed switching. DEVICE MARKING epitaxial planarAND chip,ORDERING metal siliconINFORMATION junction. • Silicon parts meet environmental standards of • Lead-free Device Marking Shipping 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 product for packing code suffix2L "G" • RoHS M MBT5401LT1 Halogen free product for packing code suffix "H" SOT– 23 3000/Tape&Reel MAXIMUM RATINGS Mechanical data Rating Symbol Value : UL94-V0 rated flame retardant • Epoxy Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO : Molded plastic, SOD-123H • Case Emitter–Base V EBO , • Terminals :PlatedVoltage terminals, solderable per MIL-STD-750 CollectorMethod Current2026 — Continuous T A =25 °C Derate above 25°C MAXIMUM RATINGS 0.040(1.0) 0.024(0.6) Vdc Vdc Typ. 0.031(0.8) Vdc – 500 IC • Polarity : Indicated by cathode band THERMAL CHARACTERISTICS : Any • Mounting Position Characteristic Total: Device Dissipation FR-gram 5 Board (1) • Weight Approximated 0.011 Unit – 150 – 160 – 5.0 3 COLLECTOR 0.031(0.8) Typ. 1 BASE mAdc Dimensions in inches and (millimeters) Symbol Max Unit PD 225 mW 2 EMITTER 1.8 mW/°C AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Thermal Resistance, Junction to Ambient R θJA Single phaseTotal half Device wave, 60Hz, resistive of inductive load. Dissipation PD For capacitiveAlumina load, derate current(2) byT20% Substrate, A = 25°C 556 °C/W 300 mW Derate above 25°C 2.4FM140-MHmW/°C FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH RATINGS R12θJA °C/W Marking CodeThermal Resistance, Junction to Ambient 13 417 14 15 16 18 10 115 120 Junction andReverse StorageVoltage Temperature Maximum Recurrent Peak VRRM T J20 , Tstg °C50 60 80 100 150 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts VDC 20 30 40 50 60 80 100 150 200 Volts DEVICE Maximum DC BlockingMARKING Voltage –55to+15040 30 IO Peak Forward Surge Current 8.3 ms single half sine-wave IFSM (T A = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS superimposed on rated load (JEDEC method) 1.0 30 MMBT5401LT1= 2L Maximum Average Forward Rectified Current Typical Thermal Resistance (Note 2) Characteristic RΘJA OFF Capacitance CHARACTERISTICS Typical Junction (Note 1) CJ Collector–Emitter Breakdown Voltage TJ Operating Temperature Range –1.0 mAdc, I B = 0) (I C =Range Storage Temperature TSTG Symbol Min -55 to +125 V (BR)CEO 40 120 Amps Ma x Unit PF -55 toVdc +150 ℃/W – 150 — - 65 to +175 ℃ ℃ Collector–Base Breakdown Voltage V (BR)CBO Vdc (I CCHARACTERISTICS = –100 µAdc, I E = 0) – FM160-MH 160 — FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH Volts 0.9 Maximum ForwardEmitter-BAse Voltage at 1.0A DC 0.92 VF 0.50 V(BR)EBO 0.70 0.85 Vdc Breakdown Voltage (I EReverse = –10µAdc,I -5.0 0.5 — Maximum Average Current at @T A=25℃ C=0) IR mAmp I CES 10 @T A=125℃ Rated DC BlockingCollector Voltage Cutoff Current (V CB = –120 Vdc, IE= 0) — – 50 nAdc NOTES: (V CB = –120 Vdc, IE= 0, T A=100 °C) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Amps — – 50 µAdc 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2- Thermal Resistance From Junction to Ambient 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT5401LT1 HighMOUNT Voltage Transistor FM1200-M+ 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H 25°Ctounless otherwise noted) (Continued) ELECTRICAL CHARACTERISTICS profile surface mounted application(TinA = order • Low optimize board space.Characteristic Symbol loss, high efficiency. • Low ONpower CHARACTERISTICS (2) • High current capability, low forward voltage drop. DC Current Gain • High surge capability. C = –1.0mAdc, V CE = –5.0 Vdc) overvoltage protection. • Guardring(Ifor (IC = –10switching. mAdc, V CE = –5.0 Vdc) • Ultra high-speed (IC = –50 mAdc,chip, V CE metal = –5.0silicon Vdc) junction. planar • Silicon epitaxial Collector–Emitter Saturation Voltage parts meet environmental standards of • Lead-free • 0.012(0.3) Typ. 50 60 50 –– 240 –– –– –– – 0.2 – 0.5 –– – 1.0 –– – 1.0 0.071(1.8) 0.056(1.4) VCE(sat) Vdc VBE(sat) Vdc B • C B : Molded plastic, SOD-123H • Case SMALL–SIGNAL CHARACTERISTICS , • Terminals :Plated terminals, solderable per MIL-STD-750 Current–Gain — Bandwidth Product • • • Unit –– = –1.0 mAdc) Epoxy : UL94-V0 flame retardant (I = –50rated mAdc, I = –5.0 mAdc) C Max 0.146(3.7) 0.130(3.3) hFE MIL-STD-19500 (IC = –10/228 mAdc, IB = –1.0 mAdc) RoHS product packing suffixmAdc) "G" (IC =for –50 mAdc,code I B = –5.0 Halogen free product for packing code suffix "H" Base–Emitter Saturation Voltage Mechanical data (I = –10 mAdc, I Min 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. f 2026 V CE= –10 Vdc, f = 100 MHz) (IMethod C = –10 mAdc, Capacitance Polarity Output : Indicated by cathode band (V CB= –10 Vdc, I E = 0, f = 1.0 MHz) Mounting Position : Any Small–Signal Current Gain Weight : Approximated 0.011 gram (IC= –1.0mAdc, VCE = –10Vdc, f = 1.0 kHz) Noise Figure 0.031(0.8) Typ. MHz T 100 C obo 300 Dimensions in inches and (millimeters) pF –– 6.0 40 200 –– 8.0 h fe — NF MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (IC = –200 µAdc, VCE= –5.0 Vdc,Rs=10Ω, f = 1.0 kHz) Ratings at 25℃ ambient temperature unless otherwise specified. dB Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT5401LT1 High MOUNT Voltage Transistor FM1200-M+ 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to 200 space. optimize board h FE, CURRENT GAIN loss, high efficiency. • Low power 150 • High current capability, low Tforward J=125°C voltage drop. capability. • High surge100 • Guardring for overvoltage protection. 25°C 70 switching. • Ultra high-speed • Silicon epitaxial planar chip, metal silicon junction. 50 • Lead-free parts meet environmental standards of MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) –55°C • RoHS product30 for packing code suffix "G" V V Halogen free product for packing code suffix "H" 20 Mechanical data 0.1 0.012(0.3) Typ. 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 CE CE = –1.0 V = –5.0 V 20 30 50 100 0.040(1.0) 0.024(0.6) V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) • Epoxy : UL94-V0 rated flame retardant I C , COLLECTOR CURRENT (mA) • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. Figure ,1. DC Current Gain • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 1.0 • Polarity : Indicated by cathode band 0.9 • Mounting Position : Any 0.8 • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) 0.7 0.6 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS I =1.0mA 30 mA C Ratings at 25℃ ambient temperature unless otherwise specified. 0.4 Single phase half wave, 60Hz, resistive of inductive load. 0.3 For capacitive load, derate current by 20% Marking Code 0.5 0.2 RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 0.1 0 VRRM 0.1 0.05 Maximum Recurrent Peak0.005 Reverse0.01 Voltage0.02 Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range CHARACTERISTICS Maximum Forward Voltage at 1.0A DC I C , COLLECTOR CURRENT (µA) Peak Forward Surge Current 8.3 ms single half sine-wave 10 3 V 10 2 10 1 10 0 NOTES: 13 30 14 40 1.0 0.5 15 502.0 16 60 5.0 14 28 35 42 I B21 , BASE CURRENT (mA) 20 30 40 50 60 Figure 2. Collector Saturation Region 1.0 30 18 80 10 100 20 10 50150 115 120 200 56 Volts 70 105 140 Volts 80 100 150 200 Volts Amps Amps = 30 V RΘJA CJ I C= I 40 120 CES -55 to +125 J TT J = 125°C ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ 75°C VREVERSE F 10 -2 @T A=125℃ CE 12 20 0.2 10 -1 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 100 mA 10mA 10 IR 0.50 FORWARD 0.70 0.85 0.5 25°C 10 -3 - 0.3 - 0.2 - 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.9 0.92 Volts mAmp 0.7 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. V BE , BASE–EMITTER VOLTAGE (VOLTS) 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 Figure 3. Collector Cut–Off Region WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT5401LT1 HighMOUNT Voltage Transistor FM1200-M+ 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H θ V , TEMPERATURE COEFFICIENT (mV/° C) • Low profile surface mounted application in order to optimize1.0board space. • V, VOLTAGE (VOLTS) T J =25°C • Low power 0.9 loss, high efficiency. capability, low forward voltage drop. • High current 0.8 capability. • High surge 0.7 V BE(sat) @ I C /I B =10 for overvoltage protection. • Guardring 0.6 • Ultra high-speed switching. 0.5 • Silicon epitaxial planar chip, metal silicon junction. 0.4 • Lead-free parts meet environmental standards of 0.3 MIL-STD-19500 /228 RoHS product for packing code suffix "G" 0.2 V CE(sat) @ I C /I B =10 Halogen0.1 free product for packing code suffix "H" Mechanical data 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 • Epoxy : UL94-V0 rated flame retardant SOD-123H CURRENT (mA) • Case : Molded plastic, I C , COLLECTOR , Figure solderable 4. “On” Voltages • Terminals :Plated terminals, per MIL-STD-750 2.5 T J = –55°C to 135°C 2.0 0.146(3.7) 0.130(3.3) 1.5 0.012(0.3) Typ. 1.0 0.5 θ VC for V CE(sat) 0.071(1.8) 0.056(1.4) 0 - 0.5 - 1.0 - 1.5 θ VB for V - 2.0 BE(sat) - 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 0.040(1.0) 0.024(0.6) 100 I C , COLLECTOR CURRENT (mA) 0.031(0.8) Typ. 0.031(0.8) Typ. Figure 5. Temperature Coefficients Method 2026 • Polarity : Indicated by cathode band V BB • Mounting Position : Any +8.8 V 10.2V • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) V –30 V R T J =25°C 70 50 C C, CAPACITANCE (pF) 3.0 k 100 V 100 CC 30 in MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 20 V 0.25µF R B specified. 10µs unless Ratings at 25℃ ambient temperature otherwise INPUT PULSE Single phase half wave, 60Hz, resistive of inductive 5.1 load. k , t f < 10 ns For capacitive load,t rderate current by 20%V in 100 1N914 DUTY CYCLE = 1.0% RATINGS Marking Code 10 VRRM 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 1000 CJ 1) t, TIME (ns) Maximum Forward CHARACTERISTICS 70 Voltage 50 30 t d@ V @T A=125℃ V NOTES: CC 0.3 35 42 0.5 18 80 1.0 2.0 56 10 100 115 150 5.0 70 3.0 10 105 20 50 V R , REVERSE 60 80 100 VOLTAGE (VOLTS) 150 100 70 50 = 30V 30 20 CC 0.50 IR BE(off) 40 120 I C /I B= 10 120 200 Volts 140 Volts 200 Volts Amps t f@ V Amps t ℃/W f PF @VCC = 120V -55 to +150 T J= 25°C ℃ - 65 to +175 CC = 30V ℃ 10 7.0 5.0 0.70 0.9 0.85 0.92 0.5 3.0 = 1.0V Volts mAmps 10 2.0 = 120V 1.0 10 0.2 0.3 0.5 reverse 1.0 2.0voltage 3.0 5.0of 4.0 10 VDC. 20 30 1- Measured at 1 MHZ and applied 50 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 0.2 -55 to +125 VF at 1.0A DC 1.0 16 60 FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH @V CC= 120V t s FM160-MH Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking 20 Voltage CC = 120V TJ 100 15 50 30 t r @V TSTG Storage Temperature 200 Range 14 2.0 40 t, TIME (ns) t r @V Operating Temperature Range 300 obo Figure 1.0 7. Capacitances RΘJA Typical Thermal Resistance 2) I C /I (Note B =10 Typical Junction C 5.0 20 700 500 Capacitance (Note T J= 25°C ibo 7.0 Values Shown are for I C @ 10 mA12 Maximum Recurrent Peak Reverse Voltage C SYMBOL FM120-MH FM130-MH FM140-MH 3.0 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Figure 6. Switching Time Test Circuit out I C , COLLECTOR CURRENT (mA) Figure 8. Turn–On Time 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 I C , COLLECTOR CURRENT (mA) Figure 9. Turn–Off Time WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT5401LT1 HighMOUNT Voltage Transistor FM1200-M+ 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-23 0.146(3.7) 0.130(3.3) .006(0.15)MIN. .063(1.60) .047(1.20) .122(3.10) Halogen free product for packing code suffix "H".106(2.70) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Mechanical data 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. .110(2.80) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .008(0.20) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .080(2.04) .070(1.78) RATINGS .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Maximum Recurrent Peak Reverse Voltage .004(0.10)MAX. Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ -55 to +125 .020(0.50) .012(0.30) Storage Temperature Range TSTG CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ Amps ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts Dimensions in inches and (millimeters)10 @T A=125℃ 40 120 Amps SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 1.0 30 .055(1.40) .035(0.89) .083(2.10) optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT5401LT1 HighMOUNT Voltage Transistor FM1200-M+ 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features • Batch process design, excellent power dissipation offers Pb Free Product Package outline better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. efficiency. • Low power loss, high Device PN Packing 0.146(3.7) 0.130(3.3) • High current capability, low forward (1) voltage drop. MMBT5401LT1 G ‐WS Tape&Reel: 3 Kpcs/Reel • High surge capability. Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. for any errors or inaccuracies. Data sheet specifications and its information load, derate current by 20% For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Amps Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, PF 120 Typical Junction Capacitance (Note 1) CJ life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmps such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.