WMBT5401LT1 COLLECTOR 3 PNP Silicon Transistor 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –150 Vdc Collector – Base Voltage VCBO –160 Vdc Emitter – Base Voltage VEBO –5.0 Vdc IC –500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C 556 °C/W Collector Current — Continuous 2 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C RqJA PD mW mW/°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature °C/W RqJA TJ, Tstg – 55 to +150 °C DEVICE MARKING W MBT5401LT1 = 2L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max –150 — –160 — –5.0 — — — –50 –50 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) V(BR)CEO Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) V(BR)CBO Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = –120 Vdc, IE = 0) (VCB = –120 Vdc, IE = 0, TA = 100°C) Wing Shing Computer Components Co., (H.K .)L td. Homepage: http: / / www.wingshing.com Vdc Vdc Vdc I CB0 nAdc µAdc Tel: (8 52) 2341 9 27 6 Fax : (8 52) 27 9 7 8 153 E-mail: wsccltd@ hk star.com Motorola Small–Signal Transistors, FETs and Diodes Device Data 1 WMBT5401LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 80 80 80 — 240 — — — –0.2 –0.5 — — –1.0 –1.0 100 300 — 6.0 40 200 — 8.0 Unit ON CHARACTERISTICS DC Current Gain (IC = –1.0 mAdc, VCE = –5.0 Vdc) (IC = –10 mAdc, VCE = –5.0 Vdc) (IC = –50 mAdc, VCE = –5.0 Vdc) hFE Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) VCE(sat) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) VBE(sat) — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –10 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) fT MHz Cobo Small Signal Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hfe Noise Figure (IC = –200 µAdc, VCE = –5.0 Vdc, RS = 10 Ω, f = 1.0 kHz) NF pF — dB