WILLAS FM120-M+ THRU MMDL6050 FM1200-M+ 200mA Surface Mount Switching Diode - 70V 1.0A SURFACE MOUNT SCHOTTKYSOD-323 BARRIERPackage RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to •FETURE optimize board space. power loss, highisefficiency. • Low package available z Pb-Free current capability, low forward voltage • High RoHS product for packing code suffix ”G” drop. surge capability. • High Halogen free product for packing code suffix “H” forSensitivity overvoltageLevel protection. • Guardring z Moisture 1 • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) Ordering Information MIL-STD-19500 /228 SOD-323 • RoHS product for packing code suffix "G" Polarity: Color band denotes cathode end Device Marking Shipping Halogen free product for packing code suffix "H" MMDL6050 5A 3000/Tape&Reel Mechanical data 1 CATHODE • Epoxy : UL94-V0 rated flame retardant MAXIMUM RATINGS • Case : Molded plastic, SOD-123H Rating Symbol , • Terminals :Plated terminals, solderable per MIL-STD-750 Reverse Voltage VR ForwardMethod Current2026 Polarity IndicatedSurge by cathode Peak: Forward Currentband 0.040(1.0) 0.024(0.6) Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* PD 200 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS mW T A = 25°C Ratings at 25℃ ambient temperature unless otherwise specified. Derate above 25°C 1.57 mW/°C Single phase half wave, 60Hz, resistive of inductive load. Thermal Resistance Junction to Ambient R θJA 635 °C/W For capacitive load, derate current by 20% Operating/Junction and Storage Temperature T J , T stg 150 °C RATINGS **FR-4 Minimum Pad SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 Maximum RMS Voltage VRMS 14 21 28 20 30 40 VDC (T = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS A Maximum Average Forward Rectified Current IO DEVICE MARKING MMDL6050 = 5A 15 50 Maximum DC Blocking Voltage Characteristic Peak Forward Surge Current 8.3 ms single half sine-wave OFF superimposed onCHARACTERISTICS rated load (JEDEC method) IFSM Typical ThermalReverse Resistance (Note 2) Voltage (I (BR) = 100 RΘJA Breakdown µAdc) Typical JunctionReverse Capacitance (NoteLeakage 1) CJ Voltage Current Operating Temperature Range (V R = 50 Vdc) 2 ANODE 0.031(0.8) Typ. Value0.031(0.8) Typ. Unit 70 Vdc 200 mAdc Dimensions in inches and (millimeters) 500 mAdc IF I FM(surge) • Position : Any • Mounting THERMAL CHARACTERISTICS • Weight : Approximated 0.011 gram 0.012(0.3) Typ. TJ 16 60 18 80 35 42 50 60 Symbol Min Max V (BR) 70 — I R to +125— -55 0.1 10 100 115 150 120 200 56 70 105 140 80 100 150 200 1.0 Unit 30 Vdc 40 120 µAdc -55 to +150 - 65 to +175 TSTG VF Vdc (I F = 1.0 mAdc) 0.55 0.7 FM140-MH 1.1 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH0.85 (I F =CHARACTERISTICS 100 mAdc) 0.9 Maximum Forward VoltageRecovery at 1.0A DC 0.92 VF 0.50 0.70 0.85 Reverse Time t rr — 4.0 ns 0.5 Maximum Average Reverse @T=A=25℃ (I F = I R = 10Current mAdc, at I R(REC) 1.0 mAdc) (Figure 1) IR @T A=125℃ Rated DC Blocking Voltage (V R = 0 V) Capacitance C — 2.5 pF 10 Storage Temperature Range Forward Voltage NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMDL6050 FM1200-M+ 200mA Surface Mount Switching Diode - 70V 1.0A SURFACE MOUNT SCHOTTKYSOD-323 BARRIER RECTIFIERS Package -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers 2.0 k better820 reverse SOD-123H Ω leakage current and thermal resistance. +10 V • Low profile surface mounted application in order to IF tp optimize board space. tr t 0.1µF 0.146(3.7) IF • Low power loss, 100high µH efficiency. t rr t 0.130(3.3) 0.012(0.3) Typ. 10% • High current capability, low forward voltage drop. • High surge capability. µF protection. • Guardring for0.1overvoltage 90% DUT 0.071(1.8) i = 1.0 mA switching. • Ultra 50 Ω high-speed OUTPUT 50 Ω INPUT 0.056(1.4) I OUTPUT PULSE PULSE INPUT SIGNAL SAMPLING R • Silicon epitaxial planar chip, metal silicon junction. (I = I = 10 mA; MEASURED GENERATOR OSCILLOSCOPE V R of • Lead-free parts meet environmental standards = 1.0 mA) at i MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Mechanical data 0.040(1.0) Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant Notes: 3. t p » t rr • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750 Figure 1. Recovery Time Equivalent Test Circuit R(REC) F R R(REC) Method 2026 Dimensions in inches and (millimeters) TYPICAL CHARACTERISTICS 10 T A = 85°C Ratings at 25℃ ambient temperature unless otherwiseTspecified. A = –40°C Single phase10half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 0.1 IO 1.0 FORWARD Peak Forward Surge CurrentV8.3 single half VOLTAGE sine-wave (VOLTS) F , ms IFSM Maximum Average Forward0.4 Rectified Current 0.2 0.6 0.8 superimposed on rated load (JEDEC method) Figure 2. Forward Typical Junction Capacitance (Note 1) C D , DIODE CAPACITANCE (pF) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Voltage NOTES: 15 50 T A = 55°C 16 60 18 80 10 100 115 150 120 200 28 35 42 56 70 105 140 V 40 50 T60 A = 25°C 80 100 150 200 V 10 201.0 0 0.64 40 50 Figure 3. Leakage Current 40 120 -55 to +125 TJ 30 V R , REVERSE 30 VOLTAGE (VOLTS) ℃ -55 to +150 - 65 to +175 TSTG SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Average Reverse Current at @T A=25℃ 0.60 Rated DC Blocking Voltage 0.01 14 40 CJ 0.68 Operating Temperature Range T A = 85°C 0.1 0.001 1.2 RΘJA Typical Thermal Resistance (Note 2) Storage Temperature Range T A = 125°C 1.0 T A =SYMBOL 25°C FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code1.0 T A = 150°C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS I R , REVERSE CURRENT (µA) I F , FORWARD CURRENT (mA) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 100 @T A=125℃ 0.50 0.70 0.85 0.9 0.92 0.5 IR 10 m 0.56 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.52 0.2 0.4 0.6 0.8 1.0 1.2 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance 2012-06 2012-1 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMDL6050 FM1200-M+ 200mA Surface Mount Switching Diode - 70V 1.0A SURFACE MOUNT SCHOTTKYSOD-323 BARRIER RECTIFIERS Package -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. .091(2.30) .010(0.25) .016(0.40) Halogen free product for packing code suffix "H" .075(1.90) .059(1.50) retardant • Epoxy : UL94-V0 rated flame Mechanical data 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .045(1.15) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .057(1.45) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. SOD-323 • Guardring for overvoltage protection. • Ultra high-speed switching. .106(2.70) metal silicon junction. • Silicon epitaxial planar chip, • Lead-free parts meet environmental standards of .043(1.10) 0.040(1.0) 0.024(0.6) .031(0.80) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) .004(0.10)MAX. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 13 30 14 40 .008(0.20) 21 28 .004(0.10) 30 40 15 50 16 60 18 80 10 100 115 150 120 200 V 35 42 56 70 105 140 V 50 60 80 100 150 200 V 1.0 30 .016(0.40) .010(0.25) 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG .010(0.25)MIN. CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage NOTES: @T A=125℃ 0.50 0.70 0.85 0.9 0.92 0.5 IR Dimensions in inches and (millimeters) 10 V m 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. Ordering Information: Device PN MMDL6050‐T(1)G(2)‐WS Note: (1) Packing code, Tape&Reel Packing Packing Tape&Reel: 3 Kpcs/Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-1 WILLAS ELECTRONIC CORP.