ISC 2SC4124

Inchange Semiconductor
Product Specification
2SC4124
0Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-3PML package
·High breakdown voltage, high reliability.
·High speed
·Built in damper diode
APPLICATIONS
·Ultrahigh-definition CRT display
·Horizontal deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Maximum absolute ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
8
A
ICM
Collector current-peak
25
A
TC=25℃
70
W
PC
Collector power dissipation
Ta=25℃
3
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC4124
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
MAX
UNIT
IC=6A;IB=1.5 A
5.0
V
Base-emitter saturation voltage
IC=6A;IB=1.5 A
1.5
V
Collector-emitter sustaining voltage
IC=100mA;IB=0
800
IEBO
Emitter cut-off current
VEB=4V; IC=0
40
ICBO
Collector cut-off current
ICES
VCEO(SUS)
CONDITIONS
MIN
TYP.
V
130
mA
VCB=800V; IE=0
10
μA
Collector cut-off current
VCE=1500V; RBE=0
1
mA
hFE-1
DC current gain
IC=1 A ; VCE=5V
8
hFE-2
DC current gain
IC=6A ; VCE=5V
4
Diode forward voltage
IEC=8A
2.0
V
IC=6A;RL=33.3Ω
IB1=1.2A; IB2=-2.4A
VCC=200V
3.0
μs
0.2
μs
VF
6
Switching times
tstg
tf
Storage time
Fall time
2
0.1
Inchange Semiconductor
Product Specification
2SC4124
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SC4124
Silicon NPN Power Transistors
4