Inchange Semiconductor Product Specification 2SC4124 0Silicon NPN Power Transistors · DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed ·Built in damper diode APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A ICM Collector current-peak 25 A TC=25℃ 70 W PC Collector power dissipation Ta=25℃ 3 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC4124 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=6A;IB=1.5 A 5.0 V Base-emitter saturation voltage IC=6A;IB=1.5 A 1.5 V Collector-emitter sustaining voltage IC=100mA;IB=0 800 IEBO Emitter cut-off current VEB=4V; IC=0 40 ICBO Collector cut-off current ICES VCEO(SUS) CONDITIONS MIN TYP. V 130 mA VCB=800V; IE=0 10 μA Collector cut-off current VCE=1500V; RBE=0 1 mA hFE-1 DC current gain IC=1 A ; VCE=5V 8 hFE-2 DC current gain IC=6A ; VCE=5V 4 Diode forward voltage IEC=8A 2.0 V IC=6A;RL=33.3Ω IB1=1.2A; IB2=-2.4A VCC=200V 3.0 μs 0.2 μs VF 6 Switching times tstg tf Storage time Fall time 2 0.1 Inchange Semiconductor Product Specification 2SC4124 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC4124 Silicon NPN Power Transistors 4