WILLAS MMDL6050

WILLAS
FM120-M+
THRU
MMDL6050
FM1200-M+
200mA Surface Mount Switching Diode - 70V
1.0A SURFACE MOUNT SCHOTTKYSOD-323
BARRIERPackage
RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Low profile surface mounted application in order to
•FETURE
optimize board space.
power loss,
highisefficiency.
• Low
package
available
z Pb-Free
current
capability,
low forward
voltage
• High
RoHS
product
for packing
code suffix
”G” drop.
surge
capability.
• High
Halogen free product for packing code suffix “H”
forSensitivity
overvoltageLevel
protection.
• Guardring
z Moisture
1
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
Ordering Information
MIL-STD-19500
/228
SOD-323
• RoHS product for packing code suffix "G"
Polarity: Color band denotes cathode end
Device
Marking
Shipping
Halogen free product for packing code suffix "H"
MMDL6050
5A
3000/Tape&Reel
Mechanical data
1
CATHODE
• Epoxy : UL94-V0 rated flame retardant
MAXIMUM RATINGS
• Case : Molded plastic, SOD-123H
Rating
Symbol ,
• Terminals
:Plated
terminals, solderable per MIL-STD-750
Reverse
Voltage
VR
ForwardMethod
Current2026
Polarity
IndicatedSurge
by cathode
Peak: Forward
Currentband
0.040(1.0)
0.024(0.6)
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,*
PD
200
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS mW
T A = 25°C
Ratings at 25℃ ambient temperature unless otherwise specified.
Derate above 25°C
1.57
mW/°C
Single phase half wave, 60Hz, resistive of inductive load.
Thermal Resistance Junction to Ambient
R θJA
635
°C/W
For capacitive load, derate current by 20%
Junction and Storage Temperature
T J , T stg
150
°C
RATINGS
**FR-4 Minimum Pad
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
Maximum RMS Voltage
VRMS
14
21
28
20
30
40
VDC
(T
=
25°C
unless
otherwise
noted)
ELECTRICAL
CHARACTERISTICS
A
Maximum Average Forward Rectified Current
IO
DEVICE MARKING
MMDL6050 = 5A
15
50
Maximum DC Blocking Voltage
Characteristic
Peak Forward Surge Current 8.3 ms single half sine-wave
OFF
superimposed
onCHARACTERISTICS
rated load (JEDEC method)
IFSM
Typical ThermalReverse
Resistance
(Note 2) Voltage (I (BR) = 100
RΘJA
Breakdown
µAdc)
Typical JunctionReverse
Capacitance
(NoteLeakage
1)
CJ
Voltage
Current
Operating Temperature
Range
(V R = 50
Vdc)
2
ANODE
0.031(0.8) Typ.
Value0.031(0.8) Typ. Unit
70
Vdc
200
mAdc
Dimensions
in inches and (millimeters)
500
mAdc
IF
I FM(surge)
•
Position : Any
• Mounting
THERMAL CHARACTERISTICS
• Weight : Approximated 0.011 gram
0.012(0.3) Typ.
TJ
16
60
18
80
35
42
50
60
Symbol
Min
Max
V (BR) 70
—
I R to +125—
-55
0.1
10
100
115
150
120
200
56
70
105
140
80
100
150
200
1.0
Unit 30
Vdc 40
120
µAdc
-55 to +150
- 65 to +175
TSTG
VF
Vdc
(I F = 1.0 mAdc)
0.55
0.7
FM140-MH 1.1
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH0.85
(I F =CHARACTERISTICS
100 mAdc)
0.9
Maximum Forward
VoltageRecovery
at 1.0A DC
0.92
VF
0.50
0.70
0.85
Reverse
Time
t rr
—
4.0
ns
0.5
Maximum Average
Reverse
@T=A=25℃
(I F =
I R = 10Current
mAdc, at
I R(REC)
1.0 mAdc) (Figure
1)
IR
@T A=125℃
Rated DC Blocking
Voltage (V R = 0 V)
Capacitance
C
—
2.5
pF 10
Storage Temperature
Range
Forward
Voltage
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
MMDL6050
FM1200-M+
200mA Surface Mount Switching Diode - 70V
1.0A SURFACE MOUNT SCHOTTKYSOD-323
BARRIER RECTIFIERS
Package -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
2.0 k
better820
reverse
SOD-123H
Ω leakage current and thermal resistance.
+10 V
• Low profile surface mounted application in order to
IF
tp
optimize board space.
tr
t
0.1µF
0.146(3.7)
IF
• Low power loss,
100high
µH efficiency.
t rr
t
0.130(3.3)
0.012(0.3) Typ.
10%
• High current capability, low forward voltage drop.
• High surge capability.
µF
protection.
• Guardring for0.1overvoltage
90%
DUT
0.071(1.8)
i
= 1.0 mA
switching.
• Ultra
50 Ω high-speed
OUTPUT
50 Ω INPUT
0.056(1.4)
I
OUTPUT
PULSE
PULSE
INPUT
SIGNAL
SAMPLING
R
• Silicon epitaxial planar chip, metal silicon junction.
(I = I = 10 mA; MEASURED
GENERATOR
OSCILLOSCOPE V R
of
• Lead-free parts meet environmental standards
= 1.0 mA)
at i
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Mechanical data
0.040(1.0)
Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA.
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
Notes: 3. t p » t rr
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
,
• Terminals :Plated terminals,
solderable
per
MIL-STD-750
Figure 1. Recovery Time Equivalent Test Circuit
R(REC)
F
R
R(REC)
Method 2026
Dimensions in inches and (millimeters)
TYPICAL CHARACTERISTICS
10
T A = 85°C
Ratings at 25℃ ambient temperature unless otherwiseTspecified.
A = –40°C
Single phase10half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
0.1
IO 1.0
FORWARD
Peak Forward Surge CurrentV8.3
single half VOLTAGE
sine-wave (VOLTS)
F , ms
IFSM
Maximum Average
Forward0.4
Rectified Current
0.2
0.6
0.8
superimposed on rated load (JEDEC
method)
Figure
2. Forward
Typical Junction Capacitance (Note 1)
C D , DIODE CAPACITANCE (pF)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Voltage
NOTES:
15
50
T A = 55°C
16
60
18
80
10
100
115
150
120
200
28
35
42
56
70
105
140
V
40
50
T60
A = 25°C
80
100
150
200
V
10
201.0
0
0.64
40
50
Figure 3. Leakage Current
40
120
-55 to +125
TJ
30
V R , REVERSE
30 VOLTAGE (VOLTS)
℃
-55 to +150
- 65 to +175
TSTG
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Average Reverse Current at @T A=25℃
0.60
Rated DC Blocking Voltage
0.01
14
40
CJ
0.68
Operating Temperature Range
T A = 85°C
0.1
0.001
1.2
RΘJA
Typical Thermal Resistance (Note 2)
Storage Temperature Range
T A = 125°C
1.0
T A =SYMBOL
25°C
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code1.0
T A = 150°C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
I R , REVERSE CURRENT (µA)
I F , FORWARD CURRENT (mA)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight
: Approximated 0.011 gram
100
@T A=125℃
0.50
0.70
0.85
0.9
0.92
0.5
IR
10
m
0.56
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.52
0.2
0.4
0.6
0.8
1.0
1.2
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
MMDL6050
FM1200-M+
200mA Surface Mount Switching Diode - 70V
1.0A SURFACE MOUNT SCHOTTKYSOD-323
BARRIER RECTIFIERS
Package -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
0.146(3.7)
0.130(3.3)
.045(1.15)
.057(1.45)
.010(0.25)
.016(0.40)
SOD-323
optimize board space.
• Low power loss, high efficiency.
.106(2.70)
• High current capability, low forward voltage drop.
• High surge capability.
.091(2.30)
• Guardring for overvoltage protection.
• Ultra high-speed switching..075(1.90)
metal silicon junction.
• Silicon epitaxial planar chip,.059(1.50)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
.043(1.10)
0.071(1.8)
0.056(1.4)
.031(0.80)
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
.004(0.10)MAX.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
.008(0.20)
.004(0.10)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
.016(0.40)
For capacitive load, derate current by 20%
.010(0.25)
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
VRMS
14
21
28
35
42
56
70
105
140
V
VDC
20
30
40
50
60
80
100
150
200
V
VRRM
.010(0.25)MIN.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
IO
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
Storage Temperature Range
CHARACTERISTICS
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2012-1
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Average Reverse Current at @T A=25℃
2- Thermal Resistance From Junction to Ambient
A
- 65 to +175
VF
Maximum Forward Voltage at 1.0A DC
A
-55 to +150
0.63 mm
TSTG
0.025’’
2012-06
-55 to +125
TJ
Operating Temperature Range
40
120
CJ
Typical Junction Capacitance (Note 1)
RΘJA
Typical Thermal Resistance (Note 2)
Rated DC Blocking Voltage
1.0
30
Dimensions
in inches and (millimeters)
0.50
mm
I1.60
R
0.83 mm
0.063’’
0.033’’
0.70
0.85
0.9
0.92
0.5
10
V
m
2.85 mm
0.112’’
(
mm
inches
)
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.