2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Transistors General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S !External dimensions (Units : mm) 0.2 Each lead has same dimensions (1) Emitter EIAJ : SC-59 (2) Base JEDEC : SOT-346 (3) Collector ROHM : UMT3 (1) Emitter ROHM : EMT3 (1) Emitter EIAJ : SC-70 (2) Base EIAJ : SC-75A (2) Base JEDEC : SOT-323 (3) Collector JEDEC : SOT-416 (3) Collector Abbreviated symbol: B* Abbreviated symbol: B* 2SC5658 2SC1740S 0.13 0~0.1 0.22 (1) 0.5 3Min. (15Min.) 0.8 (2) (3) 2±0.2 3±0.2 0.2 0.4 0.4 1.2 0.32 4±0.2 1.2 0.8 0.2 0.45+0.15 −0.05 0.15Max. 2.5 +0.4 −0.1 5 0.5 0.45 +0.15 −0.05 (1) (2) (3) ROHM : VMT3 (1) Base (2) Emitter (3) Collector ROHM : SPT EIAJ : SC-72 Abbreviated symbol: B* * Denotes hFE !Absolute maximum (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V IC 0.15 A Collector current 0.2 2SC2412K, 2SC4081 Collector power 2SC4617, 2SC5658 dissipation 2SC1740S PC 1.6 0.7 0.55 0.1Min. 0~0.1 0~0.1 0.9 0.15 1.6 Each lead has same dimensions ROHM : SMT3 Abbreviated symbol: B* Parameter 1.0 0.2 0.2 0.3 0.8 0.7 0.15 1.1 0.8 0~0.1 0.1Min. (2) (3) 2.1 2.8 0.5 0.5 2.0 1.3 (1) (2) (3) 0.3 (2) (1) 1.25 1.6 0.3Min. !Structure Epitaxial planar type NPN silicon transistor 2SC4617 0.65 0.65 (1) 2SC4081 0.95 0.95 1.9 (3) 0.4 2SC2412K 0.15 !Features 1) Low Cob. Cob=2.0pF (Typ.) 2) Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. 0.15 W 0.3 Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C (1) Emitter (2) Collector (3) Base 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Transistors !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 60 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage BVEBO 7 − − V IE=50µA Collector cutoff current ICBO − − 0.1 µA VCB=60V Emitter cutoff current IEBO − − 0.1 µA VEB=7V DC current transfer ratio hFE 120 − 560 − VCE=6V, IC=1mA VCE(sat) − − 0.4 V IC/IB=50mA/5mA Transition frequency fT − 180 − MHz Output capacitance Cob − 2 3.5 pF Collector-emitter saturation voltage Conditions VCE=12V, IE=−2mA, f=100MHz VCE=12V, IE=0A, f=1MHz !Packaging specifications and hFE Taping Package Type hFE 2SC2412K QRS Bulk Code T146 T106 TL T2L TP Basic ordering unit (pieces) 3000 3000 3000 8000 5000 − − − − − − − − − 2SC4081 QRS − 2SC4617 QRS − − 2SC5658 QRS − − − 2SC1740S QRS − − − − − hFE values are classified as follows : Item Q R S hFE 120~270 180~390 270~560 !Electrical characterristic curves 10 2 1 25°C −55°C 5 0.5 0.2 0.1 0 0.50mA mA 0.45 A 0.40m 0.35mA Ta=25°C 80 0.30mA 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0.05mA IB=0A 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 COLLECTOR CURRENT : IC (mA) 20 Ta=100°C COLLECTOR CURRENT : IC (mA) VCE=6V Grounded emitter propagation characteristics 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics ( Ι ) 10 COLLECTOR CURRENT : IC (mA) 100 50 30µA Ta=25°C 27µA 8 24µA 21µA 6 18µA 15µA 12µA 4 9µA 6µA 2 3µA 0 0 4 8 IB=0A 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( ΙΙ ) Transistors 500 DC CURRENT GAIN : hFE VCE=5V 3V 1V 200 100 50 20 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 10 0.2 0.5 1 2 5 10 20 25°C 200 −55°C 100 50 20 10 0.2 50 100 200 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) 0.5 IC/IB=10 0.2 Ta=100°C 25°C −55°C 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.5 0.1 0.05 0.02 0.01 0.2 5 Co b 1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) Ta=25°C f=1MHz IE=0A IC=0A 2 5 10 20 50 100 100 50 20 10 −0.2 −0.5 −1 −2 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 −5 Ta=25°C VCE=6V 500 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 −100 Fig.9 Gain bandwidth product vs. emitter current Ta=25°C f=32MHZ VCB=6V 200 0.2 EMITTER CURRENT : IE (mA) Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙ) 20 Cib 2 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι ) 10 0.5 1 Ta=25°C Fig. 6 Collector-emitter saturation voltage vs. collector current Ta=100°C 25°C −55°C 0.2 0.5 COLLECTOR CURRENT : IC (mA) IC/IB=50 COLLECTOR CURRENT : IC (mA) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) VCE=5V Ta=100°C TRANSITION FREQUENCY : fT (MHz) Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S −10 EMITTER CURRENT : IE (mA) Fig.11 Base-collector time constant vs. emitter current Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0