2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Transistors General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S zDimensions (Unit : mm) 0.3 0.8 0.2 Each lead has same dimensions 1.6 1.0 0.2 0.7 0.55 0~0.1 0~0.1 0.9 0.15 1.6 0.7 0.15 1.1 0.8 0~0.1 0.1Min. 0.2 (2) (3) 2.1 2.8 0.5 0.5 2.0 1.3 (1) (2) (3) 0.3 (2) (1) 1.25 1.6 0.1Min. Each lead has same dimensions ROHM : SMT3 (1) Emitter EIAJ : SC-59 (2) Base JEDEC : SOT-346 (3) Collector ROHM : UMT3 (1) Emitter ROHM : EMT3 (1) Emitter EIAJ : SC-70 (2) Base EIAJ : SC-75A (2) Base JEDEC : SOT-323 (3) Collector JEDEC : SOT-416 (3) Collector Abbreviated symbol: B* Abbreviated symbol: B* 2SC5658 Abbreviated symbol: B* 2SC1740S (15Min.) 0.8 (2) (3) 0.13 0~0.1 0.22 (1) 0.5 2±0.2 3±0.2 0.2 0.4 0.4 1.2 0.32 4±0.2 1.2 0.8 0.2 3Min. 0.3Min. zStructure Epitaxial planar type NPN silicon transistor 2SC4617 0.65 0.65 (1) 2SC4081 0.95 0.95 1.9 (3) 0.4 2SC2412K 0.15 zFeatures 1) Low Cob. Cob=2.0pF (Typ.) 2) Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. 0.45+0.15 −0.05 0.15Max. 2.5 +0.4 −0.1 5 0.5 +0.15 0.45 − 0.05 (1) (2) (3) ROHM : VMT3 (1) Base (2) Emitter (3) Collector ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base Abbreviated symbol: B* * Denotes hFE zAbsolute maximum (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V IC 0.15 A Collector current 2SC2412K, 2SC4081 Collector power 2SC4617, 2SC5658 dissipation 2SC1740S 0.2 PC 0.15 W 0.3 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Rev.A 1/3 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 60 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage BVEBO 7 − − V IE=50µA Collector cutoff current ICBO − − 0.1 µA VCB=60V Emitter cutoff current IEBO − − 0.1 µA VEB=7V DC current transfer ratio hFE 120 − 560 − VCE=6V, IC=1mA VCE(sat) − − 0.4 V IC/IB=50mA/5mA Transition frequency fT − 180 − MHz Output capacitance Cob − 2 3.5 pF Collector-emitter saturation voltage Conditions VCE=12V, IE=−2mA, f=100MHz VCE=12V, IE=0A, f=1MHz zPackaging specifications and hFE Taping Package Type hFE 2SC2412K QRS Code T146 T106 TL T2L TP Basic ordering unit (pieces) 3000 3000 3000 8000 5000 − − − − − − − − − 2SC4081 QRS − 2SC4617 QRS − 2SC5658 QRS − − − 2SC1740S QRS − − − − − − hFE values are classified as follows : Item Q R S hFE 120 to 270 180 to 390 270 to 560 zElectrical characterristic curves 10 2 1 25°C −55°C 5 0.5 0.2 0.1 0 0.50mA mA 0.45 A 0.40m 0.35mA Ta=25°C 80 0.30mA 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0.05mA IB=0A 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 COLLECTOR CURRENT : IC (mA) 20 Ta=100°C COLLECTOR CURRENT : IC (mA) VCE=6V Grounded emitter propagation characteristics 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics ( Ι ) 10 COLLECTOR CURRENT : IC (mA) 100 50 30µA Ta=25°C 27µA 8 24µA 21µA 6 18µA 15µA 12µA 4 9µA 6µA 2 3µA 0 0 4 8 IB=0A 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( ΙΙ ) Rev.A 2/3 Transistors 500 DC CURRENT GAIN : hFE VCE=5V 3V 1V 200 100 50 20 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 10 0.2 0.5 1 2 5 10 20 25°C 200 −55°C 100 50 20 10 0.2 50 100 200 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) 0.5 IC/IB=10 0.2 Ta=100°C 25°C −55°C 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.5 0.1 0.05 0.02 0.01 0.2 5 Co b 1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) Ta=25°C f=1MHz IE=0A IC=0A 2 5 10 20 50 100 0.2 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 Ta=25°C VCE=6V 500 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : IE (mA) Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙ) 20 Cib 2 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι ) 10 0.5 1 Ta=25°C Fig. 6 Collector-emitter saturation voltage vs. collector current Ta=100°C 25°C −55°C 0.2 0.5 COLLECTOR CURRENT : IC (mA) IC/IB=50 COLLECTOR CURRENT : IC (mA) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) VCE=5V Ta=100°C TRANSITION FREQUENCY : fT (MHz) Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Fig.9 Gain bandwidth product vs. emitter current Ta=25°C f=32MHZ VCB=6V 200 100 50 20 10 −0.2 −0.5 −1 −2 −5 −10 EMITTER CURRENT : IE (mA) Fig.11 Base-collector time constant vs. emitter current Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0