WILLAS FM120-M THRU 200mA Surface Mount Switching Diode-100V MMBD7000LT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOT-23 Package Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. low forward voltage drop. • High current capability, 2 1 • High surge capability. CATHODE ANODE • Guardring for overvoltage protection. 3 • Ultra high-speed switching. CATHODE/ANODE metal silicon junction. • Silicon epitaxial planar chip, • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" CASE MAXIMUM RATINGS(EACH Mechanical data DIODE) Rating Symbol Value : UL94-V0 rated flame retardant • Epoxy Reverse Voltage VR 100 • Case : Molded plastic, SOD-123H Forward Current IF 200 , Terminals :Plated terminals, solderable per MIL-STD-750 Peak• Forward Surge Current I FM(surge) 500 Unit 0.024(0.6) Vdc Pb-Free package is available 0.031(0.8) Typ. mAdc 0.031(0.8) Typ. RoHS product for packing code suffix ”G” mAdc Moisture Sensitivity Level 1 • Polarity : Indicated by cathode band THERMAL CHARACTERISTICS Dimensions in inches and (millimeters) Position : Any • Mounting Characteristic Symbol Max Unit (1) Total•Device Dissipation FR– 5 Board P 225 mW Weight : Approximated 0.011 gram D T A = 25°C RATINGS AND ELECTRICAL Derate aboveMAXIMUM 25°C 1.8 CHARACTERISTICS mW/°C Thermal Resistance, Junction to Ambient R 556 °C/W Ratings at 25℃ ambient temperature unless otherwise θ JA specified. Total Device Dissipation P 300 mW Single phase half wave, 60Hz, resistive of inductive load. D (2) Alumina Substrate, T = 25°C For capacitive load, derateA current by 20% Derate above 25°C 2.4 mW/°C SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M RATINGS Thermal Resistance, Junction to Ambient R θ JA 417 °C/W Marking Code 12 13 14 15 16 18 10 115 120 Operating/Junction and Storage Temperature T J , T stg –55 to +150 °C 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 DEVICEMARKING MMBD7000LT1 = M5C IO Peak Forward Surge Current 8.3 ms single half sine-wave ELECTRICAL CHARACTERISTICS (T A = 25°CIFSM unless otherwise noted)(EACH DIODE) superimposed onCharacteristic rated load (JEDEC method) Symbol Min Typical Resistance (Note 2) RΘJA OFFThermal CHARACTERISTICS Maximum Average Forward Rectified Current Typical Junction Capacitance (Note 1) Reverse Breakdown Voltage Operating (I = Temperature 100 µAdc) Range (BR) Storage Temperature Range 0.040(1.0) Halogen free product for packing code suffix “H” Method 2026 318–08, STYLE11 SOT– 23 (TO–236AB) Reverse Voltage Leakage Current CJ TJ TSTG V (BR) -55 to +125 100 1.0 30 Max 40 120 — - 65 to +175 Unit Vdc -55 to +150 µ Adc (V R = 50 Vdc) IR — 1.0 CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M (V R = 100 Vdc) I R2 — 3.0 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 (V R = 50 Vdc,125°C) I R3 — 100 0.5 Maximum Average Reverse Current at @T A=25℃ IR Forward Voltage VF Vdc 10 @T A=125℃ Rated DC Blocking Voltage (I F = 1.0 mAdc) 0.55 0.7 (I F = 10 mAdc) 0.67 0.82 NOTES: (I F = 100 0.75 1.1 1- Measured at mAdc) 1 MHZ and applied reverse voltage of 4.0 VDC. Reverse Recovery Time 2- Thermal Resistance From Junction to Ambient t rr — 4.0 ns (I F = I R = 10 mAdc) (Figure 1) Capacitance(VR=0V) C — 1.5 pF 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2012-06 2012-1 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 200mA Surface Mount Switching Diode-100V MMBD7000LT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOT-23 Package Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to 2.0 k optimize820 board Ω space. +10 V • Low power loss, high efficiency. • High current capability, low forward voltage 0.1µFdrop. IF 100 µH • High surge capability. • RoHS product for packing code suffix "G" SAMPLING OSCILLOSCOPE 0.146(3.7) 0.130(3.3) IF t 0.012(0.3) Typ. t rr 10% • Guardring for overvoltage protection. • Ultra high-speed switching. 0.1planar µF DUT silicon junction. chip, metal • Silicon epitaxial 50 Ω INPUT 50 Ω OUTPUT parts meet environmental standards of • Lead-free PULSE MIL-STD-19500 /228 GENERATOR tp tr t 0.071(1.8) 0.056(1.4) 90% i IR INPUT SIGNAL V R(REC) = 1.0 mA OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) R Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) flame • Epoxy : UL94-V0 rated Notes: 1. retardant A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. SOD-123H • Case : Molded plastic, 0.031(0.8) Typ. , Notes: 3. t p » t rr • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 Figure 1. Recovery Time Equivalent Test Circuit Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram CURVES APPLICABLE TO EACH CATHODE 100 10 RATINGS I R, REVERSE CURRENT ( µA) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. T A = 85°C T A= –40°C For capacitive load, derate current by 20% I F , FORWARD CURRENT (mA) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 10 T A =125°C 1.0 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M T A =85°C Marking Code Maximum Recurrent Peak Reverse Voltage T A = 25°C 1.0 Maximum RMS Voltage Maximum DC Blocking Voltage VRRM 12 20 VRMS 14 VDC 20 IO Peak Forward Surge Current half sine-wave 0.2 0.4 8.3 ms single 0.6 0.8 1.0 IFSM 13 30 14 40 0.1 21 30 Maximum Average Forward Rectified Current T A =150°C 0.01 15 50 16 60 18 80 28 35 T A 42 =55°C 40 50 60 10 superimposed on rated load (JEDEC method) V F , FORWARD VOLTAGE (VOLTS) RΘJA Figure 2. Forward Voltage Storage Temperature Range C D , DIODE CAPACITANCE (pF) CHARACTERISTICS Rated DC Blocking Voltage NOTES: 105 140 100 150 200 30 30 40 50 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF 0.64 Maximum Average Reverse Current at @T A=25℃ 20 TSTG 0.68 Maximum Forward Voltage at 1.0A DC -55 to +125 TJ Operating Temperature Range 70 80 CJ Typical Junction Capacitance (Note 1) 56 V R , REVERSE VOLTAGE (VOLTS) 40 Figure 3. Leakage Current 120 -55 to +150 Typical Thermal Resistance (Note 2) 120 200 0 1.2 115 150 1.0 T A =25°C 0.001 0.1 10 100 @T A=125℃ 0.60 0.50 0.70 0.85 0.9 0.5 IR 0.92 10 1- Measured at 1 MHZ and applied reverse voltage0.56 of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.52 0 2.0 4.0 6.0 8.0 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance 2012-06 2012-1 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 200mA Surface Mount Switching Diode-100V MMBD7000LT1 FM1200-M+ Package 1.0A SURFACE MOUNT SCHOTTKYSOT-23 BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. SOT-23 • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of Mechanical data 0.071(1.8) 0.056(1.4) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS .080(2.04)AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. .070(1.78) Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .083(2.10) .110(2.80) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .008(0.20) .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 VDC 20 30 40 50 60 80 100 150 200 .004(0.10)MAX. Maximum DC Blocking Voltage IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM .020(0.50) RΘJA .012(0.30) CJ Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 40 120 -55 to +125 CHARACTERISTICS -55 to +150 - 65 to +175 TSTG Dimensions in inches and (millimeters) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 1.0 30 .055(1.40) .035(0.89) 0.012(0.3) Typ. .006(0.15)MIN. .122(3.10) MIL-STD-19500 /228 RoHS product for packing code suffix "G" .106(2.70) Halogen free product for packing code suffix "H" .063(1.60) .047(1.20) • 0.146(3.7) 0.130(3.3) @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-1 WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 200mA Surface Mount Switching Diode-100V MMBD7000LT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKYSOT-23 BARRIERPackage RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. SOD-123H 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) • High current capability, low forward voltage drop. Ordering Information: • High surge capability. overvoltage protection. • Guardring for Device PN Packing • Ultra high-speed switching. (ϭ) MMBD7000LT1 G ‐WS Tape&Reel: 3 Kpcs/Reel • Silicon epitaxial planar chip, metal silicon junction. Note: (ϭ) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” environmental standards of parts meet • Lead-free 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ***Disclaimer*** Ratings at 25℃ ambient temperature unless otherwise specified. Single phaseWILLAS reserves the right to make changes without notice to any product half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% specification herein, to make corrections, modifications, enhancements or other RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH changes. WILLAS or anyone on its behalf assumes no responsibility or liability 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage for any errors or inaccuracies. Data sheet specifications and its information VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS contained are intended to provide a product description only. "Typical" parameters Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC which may be included on WILLAS data sheets and/ or specifications can Maximum Average Forward Rectified Current IO 1.0 and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) WILLAS does not assume any liability arising out of the application or 40 Typical Thermal Resistance (Note 2) RΘJA use of any product or circuit. 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ 65 to +175 Storage Temperature Range TSTG WILLAS products are not designed, intended or authorized for use in medical, CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH life‐saving implant or other applications intended for life‐sustaining or other related 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 applications where a failure or malfunction of component or circuitry may directly 0.5 Maximum Average Reverse Current at @T A=25℃ IR or indirectly cause injury or threaten a life without expressed written approval 10 @T A=125℃ Rated DC Blocking Voltage NOTES:of WILLAS. Customers using or selling WILLAS components for use in 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. such applications do so at their own risk and shall agree to fully indemnify WILLAS 2- Thermal Resistance From Junction to Ambient Inc and its subsidiaries harmless against all claims, damages and expenditures. Marking Code 2012-06 2012-1 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.