The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 October 1999 INCH-POUND MIL-PRF-19500/371D 23 July 1999 SUPERSEDING MIL-S-19500/371C 27 March 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N3902 AND 2N5157 JAN AND JANTX This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, high-power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-3), (see 3.3). 1.3 Maximum ratings. Type PT 1/ PT 2/ VCBO VCEO VEBO IB IC TJ and TSTG RΘJC TA = +25°C TC = +75°C W W V dc V dc V dc A dc A dc °C °C/W 2N3902 2N5157 5.0 100 700 400 5.0 2.0 3.5 -65 to +200 1.25 5.0 100 700 500 6.0 2.0 3.5 -65 to +200 1.25 1/ Derate linearly 29 mW/°C above TA = +25°C. 2/ Derate linearly 0.8 W/°C above TC = +75°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/371D Ltr Dimensions Inches Min CD Notes Millimeters Max Min .875 Max 22.22 CH .250 .328 6.35 8.33 HR .495 .525 12.57 13.34 HR1 .131 .188 3.33 4.78 HT .060 .135 1.52 3.43 LD .038 .043 0.97 1.09 3,6 LL .312 .500 7.92 12.70 3 1.27 6 4 L1 MHD .050 .151 .161 3.84 4.09 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 PS1 s1 .205 .225 5.21 5.72 .655 .675 16.64 17.15 NOTES: 1. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and case is collector. 2. Metric equivalents are given for general information only. 3. These dimensions should be measured at points .050 inch (1.27 mm) +.005 inch (0.13 mm) - .000 inch (0.00 mm) below seating plane. When gauge is not used, measurement will be made at the seating plane. 4. Two places. 5. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 6. Lead diameter shall not exceed twice LD within L1. 7. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology. FIGURE 1. Physical dimensions. 2 MIL-PRF-19500/371D 1.4 Primary electrical characteristics. Min hFE1 1/ hFE2 1/ VBE(SAT)1 VCE(SAT)1 Cobo |hfe| VCE = 5.0 V dc VCE = 5.0 V dc IC = 1.0 A dc IC = 1.0 A dc VCB = 10 V dc VCE = 10 V dc IE = 0 IC = 0.2 A dc IC = 0.5 A dc IC = 1.0 A dc IB = 0.1 A dc IB = 0.1 A dc 100 kHz ≤ f ≤ 1 MHz f = 1 MHz V dc V dc pF 1.5 0.8 250 25 Max 30 90 Switching ton toff µs µs 0.8 1.7 2.5 25 1/ Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense Automated Printing Service, 700 Robbins Avenue, Building 4D (DPM – DODSSP), Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3 MIL-PRF-19500/371D 3. REQUIREMENTS 3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF19500. 3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in MIL-PRF-19500 and figure 1 herein. 3.3.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.7 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.4). 4. VERIFICATION 4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3) c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4 MIL-PRF-19500/371D 4.3 Screening (JANTX level). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV Measurement of MIL-PRF-19500) JANTX only 3 See 4.3.2 10 VCB = 300 V 11 hFE2 and ICEX1 12 See 4.3.1 13 ∆ICEX1 = 100 percent of initial value or 50 µA dc, whichever is greater. ∆hFE2 = 25 percent of initial value; subgroup 2 of table I herein 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = room ambient as defined in the general requirements of MIL-STD-750, paragraph 4.5; VCB = 16-20 V dc; PT = 4.0 W. 4.3.2Thermal response (∆VBE measurements). The ∆VBE measurements shall be performed in accordance with MIL-STD750, method 3131. The chosen ∆VBE measurements and conditions for each device in the qualification lot shall be submitted in the qualification report and a thermal response curve shall be plotted. The chosen ∆VBE shall be considered final after the manufacturer has had the opportunity to test five consecutive lots. One hundred percent safe operating area (SOA) testing may be performed in lieu of thermal response testing herein provided that appropriate condition of temperature, time, current, voltage, circuit and procedure to achieve die attach integrity are approved by the qualifying activity. The following parameter measurements shall apply: a. IM measurement .................................................10 mA b. VCE measurement voltage ...................................20 V ( same as VH ) c. IH collector heating current...................................2 A ( minimum ) d. VH collector-emitter heating voltage ....................20 V ( minimum ) e. tH heating time .....................................................10 ms ( minimum ) f. tMD measurement delay time................................30 µs to 60 µs g. tSW sample window time ......................................10 µs ( maximum ) 5 MIL-PRF-19500/371D 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Electrical measurements (end-points) shall be in accordance with applicable inspections of table I, group A subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIb (JAN and JANTX) of MIL-PRF-19500 and paragraph 4.4.2.1 herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, group A, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. Subgroup Method Condition B3 1037 Bias condition (see 4.3.1), ton = toff = 3 minutes, 2,000 cycles. B5 3131 VCE = 20 V dc, IC = 2.0 A, RθJC = 1.25°C/W maximum. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. Subgroup Method Condition C2 2036 test condition A, weight = 10 pounds, t = 15 s. C6 1037 Bias condition (see 4.3.1), ton = toff = 3 minutes, 6,000 cycles. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 6 MIL-PRF-19500/371D TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 Visual and mechanical 2071 examination Subgroup 2 Collector to emitter 3041 cutoff current Emitter to base cutoff Bias condition A; VCE = 700 V dc; ICEX1 500 µA dc 200 µA dc µA dc VBE = 1.5 V dc 3061 Bias condition D; IEBO1 current 2N3902 VEB = 5.0 V dc VEB = 6.0 V dc 2N5157 Collector to emitter 3041 200 Bias condition D; ICEO cutoff current 250 µA dc µA dc VBE(SAT)1 1.5 V dc VBE(SAT)2 2.0 V dc IC = 1.0 A dc; IB = 0.1 A dc; pulsed (see 4.5.1) VCE(sat)1 0.8 V dc 3071 IC = 3.5 A dc; IB = 0.7 A dc; pulsed (see 4.5.1) VCE(sat)2 2.5 V dc 3076 VCE = 5.0 V dc; IC = 0.5 A dc; pulsed (see 4.5.1) hFE1 2N3902 VCE = 325 V dc VCE = 400 V dc 2N5157 Base emitter voltage 3066 (saturated) Base emitter voltage 250 Test condition A; IC = 1.0 A dc; IB = 0.1 A dc; pulsed (see 4.5.1) 3066 (saturated) Test condition A; IC = 3.5 A dc; IB = 0.7 A dc; pulsed (see 4.5.1) | Collector to emitter 3071 saturated voltage Collector to emitter saturated voltage Forward-current transfer ratio See footnote at end of table. 7 25 MIL-PRF-19500/371D TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 2 - Continued Forward-current 3076 VCE = 5.0 V dc; IC = 1.0 A dc; pulsed (see 4.5.1) hFE2 30 3076 VCE = 5.0 V dc; IC = 2.5 A dc; pulsed (see 4.5.1) hFE3 10 3076 VCE = 5.0 V dc; IC = 3.5 A dc; pulsed (see 4.5.1) hFE4 5 IC = 100 mA dc VCEO(SUS) transfer ratio Forward-current transfer ratio Forward-current transfer ratio Collector to emitter 90 sustaining voltage 2N3902 325 V dc 2N5157 400 V dc Subgroup 3 High-temperature TA = +150°C operation: Collector to emitter 3041 Bias condition A; VBE = 1.5 V dc ICEX2 cutoff current 2N3902 VCE = 400 V dc VCE = 500 V dc 2N5157 Low-temperature 300 300 TA = -55°C operation: Forward-current transfer ratio 3076 VCE = 5.0 V dc; IC = 1.0 A dc; pulsed (see 4.5.1) See footnote at end of table. 8 hFE5 10 µA dc µA dc MIL-PRF-19500/371D TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 4 Pulse response 3251 Test condition A except test circuit and pulse requirements in accordance with figure 2 herein. Turn-on time VCC = 125 V dc; IC = 1.0 A dc; IB1 = 0.1 A dc ton 0.8 µs Turn-off time VCC = 125 V dc; IC = 1.0 A dc; IB1 = 0.1 A dc; -IB2 = 0.50 A dc toff 1.7 µs 3306 VCE = 10 V dc; IC = 0.2 A dc; f = 1 MHz |hfe| 3236 VCB = 10 V dc; IE = 0; 100 kHz ≤ f ≤ 1 MHz Cobo 3051 TC = 25°C; t ≥ 1 s; (see figure 3) Small-signal shortcircuit forward-current 2.5 25 transfer ratio Open circuit output capacitance Subgroup 5 Safe operating area (continuous dc) Test 1 VCE = 28.6 V dc; IC = 3.5 A dc Test 2 VCE = 70 V dc; IC = 1.43 A dc Test 3 2N3902 2N5157 VCE = 325 V dc; IC = 55 mA dc VCE = 400 V dc; IC = 35 mA dc See footnotes at end of table. 9 250 pF MIL-PRF-19500/371D TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Subgroup 5 continued Safe operating area 3053 (switching) Load condition C (unclamped inductive load) (see figure 4) TC = 25°C; duty cycle ≤ 10 percent, RS = 0.1Ω (see 4.5.1) Test 1 tp approximately 3 ms (vary to obtain IC); RBB1 = 20Ω; VBB1 = 10 V dc; RBB2 = 3 kΩ; VBB2 = 1.5 V dc; IC = 3.5 A dc; VCC = 50 V dc; L = 60 mH; R = 3 Ω; RL ≤ 14 Ω. Test 2 tp approximately 3 ms (vary to obtain IC); RBB1 = 100Ω; VBB1 = 10 V dc; RBB2 = 3 kΩ; VBB2 = 1.5 V dc; IC = 0.6 A dc; VCC = 50 V dc; L = 200 mH; R = 8 Ω; RL ≤ 83 Ω. Safe operating area 3053 (switching) Clamped inductive load (see figure 5); TC = +25°C; duty cycle ≤ 10 percent; tp = approximately 30 ms (vary to obtain IC); RS = 0.1Ω; RBB1 = 20Ω; VBB1 = 10 V dc; RBB2 = 100 ohms; VBB2 = 1.5 V dc; VCC = 50 V dc; IC = 3.5 A dc; (see figure 5); RL ≥ 0 Ω; L = 60 mH; R = 3 Ω A suitable clamping circuit or diode can be used. (see 4.5.1). 2N3902 Clamp voltage = 400 +0, -5 V dc 2N5157 Clamp voltage = 500 +0, -5 V dc (Clamped voltage must be reached) Electrical measurements See table II, steps 1 and 2 1/ For sampling plan, see MIL-PRF-19500. 10 Limits Min Max Unit MIL-PRF-19500/371D TABLE II. Groups A, B, C, and E delta measurements. 1/ 2/ Step Inspection MIL-STD-750 Method 1. Forward current 3076 transfer ratio Symbol Conditions VCE = 5.0 V dc; IC = 1.0 A dc; pulsed (see 4.5.1) Limit Min ∆hFE1 Unit Max ±25 percent change from previously measured value 2. Thermal response 3/ 3131 ∆VBE See 4.3.2 4/ 1/ The delta measurements for table VIb (JAN, JANTX) of MIL-PRF-19500 are as follows: a. Subgroup 3, see table II herein, steps 1 and 2. b. Subgroup 6, see table II herein, step 1. 2/ The delta measurements for table VII of MIL-PRF-19500 are as follows: a. Subgroup 1, see table II herein, steps 1 and 2. 3/ Safe operating area (SOA) may be performed in lieu of thermal response testing herein provided that the appropriate conditions of temperature, time, current, voltage, procedure and circuit to achieve die attach integrity, are approved by the qualifying activity. 4/ Twenty percent degradation in group B is permitted; 30 percent degradation in group C is permitted. 11 MIL-PRF-19500/371D NOTES: 1. The rise time (tr) and fall time (tf) of the applied pulse shall be each ≤ 20 ns; duty cycle ≤ 5 percent; generator source impedance shall be 50Ω; pulse width = 5 µs. 2. Output sampling oscilloscope: Zin ≥ 100 kΩ; Cin ≤ 50 pF; rise time ≤ 2.0 ns. FIGURE 2. Pulse response test circuit. 12 MIL-PRF-19500/371D FIGURE 3. Maximum safe operating graph (continuous dc). 13 MIL-PRF-19500/371D FIGURE 4. Safe operating area for switching between saturation and cutoff (unclamped inductive load). 14 MIL-PRF-19500/371D FIGURE 5. Safe operating area for switching between saturation and cutoff (clamped inductive load). 15 MIL-PRF-19500/371D 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Issue of DODISS to be cited in the solicitation and, if required, the specific issue of individual documents referenced (see 2.2.1). b. Lead finish (see 3.3.1). c. Type designation and product assurance level. d. Packaging requirements (see 5.1). 6.3 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. 6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List QML-19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216. Custodians: Preparing activity: Army - CR DLA - CC Navy - EC Air Force - 11 (Project 5961-2165) NASA – NA DLA - CC Review activities: Air Force - 19, 99 Navy - AS, CG, MC 16 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7, and send to preparing activity. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER 2. DOCUMENT DATE (YYYYMMDD) MIL-PRF-19500/371D 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N3902 AND 2N5157, JAN AND JANTX 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First Middle Initial) c. ADDRESS (Include Zip Code) 8. PREPARING ACTIVITY a. NAME Al Barone c. ADDRESS (Include Zip Code) DSCC-VAT 3990 East Broad Street Columbus, Ohio 43216-5000 DD Form 1426, FEB 1999 (EG) WHS/DIOR, Feb 99 b. ORGANIZATION d. TELEPHONE (Include Area Code) (1) Commercial (2) DSN (If applicable) 7. DATE SUBMITTED (YYYYMMDD) b. TELEPHONE (Include Area Code (1) Commercial (2) DSN 614-692-0510 850-0510 IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman Road, Suite 2533 Fort Belvoir, Virginia 22060-6221 Telephone (703)767-6888 DSN 427-6888 PREVIOUS EDITIONS ARE OBSOLETE.