WILLAS SOT-323 Plastic-Encapsulate Diodes FM120-M+ BAV70W THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline SWITCHING DIODE Features FEATURES • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. z Fastprofile Switching Speed surface mounted application in order to • Low optimize board space. z For General Purpose Switching Applications • Low power loss, high efficiency. z Highcurrent Conductance capability, low forward voltage drop. • High z • High Pb-Free surgepackage capability. is available for overvoltage protection. • Guardring RoHS product for packing code suffix ”G” • Ultra high-speed switching. Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon z SOT-323 SOD-123H 0.146(3.7) 0.130(3.3) 1 3 MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 2 MARKING: KJA or A4 Mechanical data Maximum Ratings @Ta=25℃ • Epoxy : UL94-V0 rated flame retardant plastic, SOD-123H • Case : Molded Parameter Symbol , • Terminals :Plated terminals, solderable per MIL-STD-750 VRM Non-Repetitive Peak Reverse Voltage 0.040(1.0) 0.024(0.6) ina ry Method 2026 Peak Repetitive Peak Reverse Voltage Limit 0.031(0.8) Typ. 75 53 V IFM 300 mA IO 150 mA VR(RMS) im Ratings at 25℃ ambient temperature unless otherwise specified. Average Rectified Current Single phase half wave,Output 60Hz, resistive of inductive load. For capacitive load,Surge derateCurrent current by@t=1.0μs 20% Peak Forward @t =1.0sSYMBOL Pr el 12 20 Maximum RMS Voltage VRMS 14 RθJA VDC 20 30j Storage Temperature Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave Electrical Ratings @Ta=25℃ superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Parameter Reverse breakdown voltage Storage Temperature Range Forward voltage CHARACTERISTICS V (BR) 75 10 100 21 28 35 42 56 70 T 40 50 60 80 100 625 150 2012-06 120 200 Volts 105 140 Volts 150 200 Volts ℃/W ℃ ℃ Amps Typ Max Unit V -55 to +125 Amps Conditions 40 120 ℃/W PF IR=100μA -55 to +150 ℃ ℃ VF2 0.855 V IF=10mA SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 1.0 0.70 VF4 1.25 V 0.5 IF=150mA IR1 2.5 μA 10 VR=75V IR2 25 nA VR=20V 2 pF VR=0V,f=1MHz IR T 2012-1 150 0.50 V 2- Thermal Resistance From Junction to Ambient Reverse recovery time 115 mW -55~+150 1.0 IF=1mA 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.C Capacitance between terminals 18 80 V - 65 to +175 Maximum Average Reverse Current at @T A=25℃ Reverse current 16 200 60 0.715 VF NOTES: 15 50 VF1 TSTG VF3 @T A=125℃ 14 40 30 Min Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 30 TSTG RΘJA Symbol TJ Operating Temperature Range Pd13 IO IFSM CJ Typical Junction Capacitance (Note 1) A FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH 1.0 FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VRRM Junction Maximum DC Temperature Blocking Voltage 2.0 IFSM Maximum Recurrent Peak Reverse Voltage Thermal Resistance Junction to Ambient V VR MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking Code Power Dissipation V Dimensions in inches and (millimeters) VRWM RMS Reverse Voltage RATINGS Unit 0.031(0.8) Typ. 100 VRRM • Polarity : Indicated by cathode band Working Peak Reverse Voltage • Mounting Position : Any DC Blocking • Weight :Voltage Approximated 0.011 gram Forward Continuous Current 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Moistureparts Sensitivity Level 1 standards of meet environmental • Lead-free • Pb Free Product trr 4 ns IF=50mA 0.85 0.9 0.92 Volts mAmp IF=IR=10mA Irr=0.1XIR,RL=100Ω WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAV70W THRU FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-323 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) MIL-STD-19500 /228 Halogen free product for packing code suffix "H" .054(1.35) .045(1.15) 0.031(0.8) Typ. ina Method 2026 0.040(1.0) 0.024(0.6) ry .087(2.20) • Epoxy : UL94-V0 rated flame retardant .070(1.80) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .004(0.10)MIN. 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) Pr eli m MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .010(0.25) 18 10 .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI .056(1.40) Marking Code 0.031(0.8) Typ. .096(2.45) .078(2.00) Mechanical data 0.012(0.3) Typ. Maximum Recurrent Peak Reverse Voltage .047(1.20) VRRM 12 20 13 30 14 40 15 50 16 60 80 100 115 150 120 200 Volt VRMS 14 21 28 35 42 56 70 105 140 Volt Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volt Maximum Average Forward Rectified Current IO IFSM Maximum RMS Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range 1.0 30 40 120 -55 to +125 Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage IR .016(0.40) .008(0.20) @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .043(1.10) .032(0.80) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Maximum Forward Voltage at 1.0A DC 0.50 0.70 0.85 0.5 0.9 0.92 Volt 10 mAm 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.DCORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP.