SCS5 VOLTA 0.1AMP Schottky WILLAS Pb Free Product Dual Switching Diode FEATURES SOD-3 MMBD7000LT1 .065 (1.65) Cath .076 (1.95) ANODE * Extremely thin package 2 * Low stored charge CATHODE * Majority carrier conduction 3 CATHODE/ANODE .112 (2.85) 1 .012 (0.3 .100 (2.55) * Extremely Low VF MECHANICAL DATA CASE MAXIMUM RATINGS(EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current 318–08, STYLE11 SOT– 23 (TO–236AB) * Case:Molded plastic, JEDEC SOD-323(SC-76) Symbol Value Unit * Terminal : Solder plated, solderable per MIL-STD-750, VR 100 Vdc Method IF 2002026 mAdc *I Polarity : Indicated band 500by cathode mAdc FM(surge) .043 (1.1) .004 (0.1) max. .059 (1.5) * Mounting Position : Any THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICEMARKING MMBD7000LT1 = M5C * Weight : 0.000159 ounce, 0.0045 gram Symbol Max Unit PD 225 mW 1.8 556 300 R θ JA P D Marking Code: mW/°C °C/W mW MAXIMUM RATING AND ELECTRICAL CHARACT Rating 25oC ambient unless otherwise specified. 2.4 temperature mW/°C Single phase half 417 wave, 60Hz, resistive R °C/W of inductive load. θ JA For load, T J , capacitive T stg –55 to derate +150 current°Cby 20% Conditions Parameter VRM Continuous Reverse Voltage VR I F = 10mA DC ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)(EACH DIODE) Forward Voltage Characteristic Symbol MinI F = 100mA Max DC OFFCHARACTERISTICS Reverse Current Reverse Breakdown Voltage V (BR) Mean Rectifying Current (I (BR) = 100 µAdc) Symbol Repetitive Peak Reverse Voltage Unit 100 VF2 IR VR = 10V DC — Peak forward surge current Vdc µ Adc Reverse Voltage Leakage Current Capacitance between terminals (V R = 50 Vdc) IR Operating Temperature (V R = 100 Vdc) I R2 Storage Temperature I (V R = 50 Vdc,125°C) R3 Forward Voltage VF (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 100 mAdc) Reverse Recovery Time t rr (I F = I R = 10 mAdc) (Figure 1) Capacitance(VR=0V) C 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. VF1 — — — 1.0 3.0 100 0.55 0.67 0.75 0.7 0.82 1.1 — 4.0 ns — 1.5 pF IO IFSM CT TJ TSTG Vdc WILLAS MMBD7000LT1 +10 V 2.0 k 820 Ω 100 µH IF 0.1 µF tp tr 0.1µF IF t t rr 10% t 90% DUT 50 Ω INPUT SAMPLING OSCILLOSCOPE 50 Ω OUTPUT PULSE GENERATOR i IR INPUT SIGNAL V R(REC) = 1.0 mA OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) R Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH CATHODE 10 I R, REVERSE CURRENT ( µA) T A = 85°C T A= –40°C 10 T A = 25°C 1.0 T A =150°C T A =125°C 1.0 T A =85°C 0.1 T A =55°C 0.01 T A =25°C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 0 1.2 10 20 30 40 V F , FORWARD VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D , DIODE CAPACITANCE (pF) I F , FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance 8.0 50 WILLAS MMBD7000LT1 SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 PIN 1. ANODE 2. CATHODE 3. CATHODE/ANODE 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60