VFT2045C-M3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A FEATURES TMBS ® • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 1 2 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 3 VFT2045C PIN 1 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PIN 2 PIN 3 MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 45 V IFSM 160 A VF at IF = 10 A 0.41 V TJ max. 150 °C Package ITO-220AB Diode variation Dual common cathode Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) SYMBOL VFT2045C UNIT VRRM 45 V per device per diode 20 IF(AV) A 10 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 160 A Isolation voltage from termal to heatsink t = 1 min VAC 1500 V Operating junction and storage temperature range TJ, TSTG -40 to +150 °C Revision: 22-Nov-13 Document Number: 89354 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VFT2045C-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A IF = 10 A Instantaneous forward voltage per diode IF = 5 A IF = 10 A VR = 45 V Reverse current per diode SYMBOL TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TYP. MAX. 0.44 - 0.49 0.58 0.33 - V 0.41 0.52 - 2000 μA 10 30 mA IR (2) TA = 125 °C UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VFT2045C UNIT 6.0 per diode Typical thermal resistance °C/W RJC per device 4.5 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N ITO-220AB UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.76 4W 50/tube Tube VFT2045C-M3/4W 24 6 20 5 D = 0.8 Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 16 12 8 4 D = 0.5 D = 0.3 4 D = 0.2 D = 1.0 3 D = 0.1 T 2 1 0 D = tp/T tp 8 10 0 80 90 100 110 120 130 140 150 0 2 4 6 12 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 22-Nov-13 Document Number: 89354 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VFT2045C-M3 www.vishay.com Vishay General Semiconductor 10 000 TA = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0.8 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 100 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 0.1 TA = 25 °C 0.01 0.001 20 40 60 80 Junction to Case 1 0.1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) ITO-220AB 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.076 (1.93) REF. 45° REF. 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.671 (17.04) 0.651 (16.54) PIN 1 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 3 7° REF. 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.191 (4.85) 0.171 (4.35) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.110 (2.79) 0.100 (2.54) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) Revision: 22-Nov-13 Document Number: 89354 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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