VS-ETU1506-M3,VS-ETU1506FP-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt® FEATURES • Low forward voltage drop • Ultrafast soft recovery time • 175 °C operating junction temperature • Low leakage current 2L TO-220AC • Fully isolated package (VINS = 2500 VRMS) 2L TO-220 FULL-PAK • True 2 pin package • Designed and qualified according to JEDEC®-JESD 47 Base cathode 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 Anode 1 Cathode VS-ETU1506-M3 DESCRIPTION 2 Anode 1 Cathode State of the art, ultralow VF, soft-switching ultrafast rectifiers optimized for Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC). VS-ETU1506FP-M3 The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching element and snubbers. PRODUCT SUMMARY Package 2L TO-220AC, 2L TO-220FP IF(AV) 15 A VR 600 V VF at IF 1.1 V trr (typ.) 24 ns TJ max. 175 °C Diode variation Single die The device is also intended for use as a freewheeling diode in power supplies and other power switching applications. APPLICATIONS AC/DC SMPS 70 W to 400 W e.g. laptop and printer AC adaptors, desktop PC, TV and monitor, games units and DVD AC/DC power supplies. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage TEST CONDITIONS VALUES UNITS 600 V VRRM Average rectified forward current in DC IF(AV) FULL-PAK Non-repetitive peak surge current IFSM Operating junction and storage temperatures TC = 151 °C 15 TC = 103 °C TJ = 25 °C A 160 TJ, TStg -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 15 A - 1.35 1.9 IR = 100 μA IF = 15 A, TJ = 150 °C - 1.1 1.3 VR = VR rated - 0.01 15 TJ = 150 °C, VR = VR rated - 20 200 UNITS V μA Reverse leakage current IR Junction capacitance CT VR = 600 V - 12 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH Revision: 08-Jul-15 Document Number: 93534 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU1506-M3,VS-ETU1506FP-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr MIN. TYP. MAX. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V TEST CONDITIONS - 24 28 IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V - 36 47 TJ = 25 °C - 40 - TJ = 125 °C Peak recovery current IRRM Reverse recovery charge Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge UNITS ns - 87 - - 5 - - 9 - TJ = 25 °C - 107 - TJ = 125 °C - 430 - - 53 - ns - 25 - A - 730 - nC MIN. TYP. MAX. UNITS -65 - 175 °C TJ = 25 °C TJ = 125 °C TJ = 125 °C Qrr IF = 15 A dIF/dt = 200 A/μs VR = 390 V IF = 15 A dIF/dt = 800 A/μs VR = 390 V A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance, junction to case FULL-PAK TEST CONDITIONS TJ, TStg RthJC - 1.2 1.4 - 3.7 4.3 Thermal resistance, junction to ambient RthJA Typical socket mount - - 70 Typical thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2 - - 0.07 - oz. - 12 (10) kgf · cm (lbf · in) Weight 6 (5) Mounting torque Marking device Case style 2L TO-220AC Case style 2L TO-220 FULL-PAK °C/W g ETU1506 ETU1506FP Revision: 08-Jul-15 Document Number: 93534 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU1506-M3,VS-ETU1506FP-M3 www.vishay.com Vishay Semiconductors 1000 100 175°C Reverse Current - IR (µA) 100 125°C 1 100°C 75°C 0.1 50°C 0.01 25°C 0.001 0.0001 0 100 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10 1000 Tj = 150°C Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) Tj = 175°C 150°C 10 Tj = 25°C 100 10 1 0.5 1.0 1.5 2.0 1 2.5 0 Forward Voltage Drop - VF (V) 100 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics Thermal Impedance ZthJC (°C/W) 10 D = 0.5 1 D = 0.2 D = 0.1 D = 0.05 0.1 D = 0.02 Single Pulse (Thermal Resistance) D = 0.01 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 08-Jul-15 Document Number: 93534 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU1506-M3,VS-ETU1506FP-M3 www.vishay.com Vishay Semiconductors Thermal Impedance ZthJC (°C/W) 10 D = 0.5 D = 0.2 1 D = 0.1 D = 0.05 Single Pulse (Thermal Resistance) D = 0.02 D = 0.01 0.1 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 t1, Rectangular Pulse Duration (Seconds) Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK) 180 Allowable Case Temperature (°C) Allowable Case Temperature (°C) 180 170 160 DC 150 140 160 140 DC 120 100 80 60 40 130 20 0 2 4 6 8 10 12 14 16 Average Forward Current - IF(AV)(A) 0 Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current 2 4 6 8 10 12 14 16 Average Forward Current - IF(AV)(A) Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK) Average Power Loss ( Watts ) 30 RMS Limit 25 20 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 15 10 5 0 0 5 10 15 20 25 Average Forward Current - IF(AV) (A) Fig. 8 - Forward Power Loss Characteristics Revision: 08-Jul-15 Document Number: 93534 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU1506-M3,VS-ETU1506FP-M3 www.vishay.com Vishay Semiconductors 120 900 110 800 100 700 90 If = 15 A, 125°C Qrr ( nC ) trr ( ns ) If = 15 A, 125°C 600 80 70 60 50 500 400 If = 15 A, 25°C 300 40 If = 15 A, 25°C 200 30 100 typical value 20 typical value 10 0 100 1000 100 1000 di F /dt (A/µs ) di F /dt (A/µs ) Fig. 9 - Typical Reverse Recovery vs. dIF/dt Fig. 10 - Typical Stored Charge vs. dIF/dt VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 11 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 12 - Reverse Recovery Waveform and Definitions Revision: 08-Jul-15 Document Number: 93534 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU1506-M3,VS-ETU1506FP-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E T U 15 06 FP -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Circuit configuration: 3 - T = TO-220 4 - U = hyperfast recovery time 5 - Current code: 15 = 15 A 6 - Voltage code: 06 = 600 V 7 - E = single diode None = TO-220 FP = FULL-PAK 8 - Environmental digit: -M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-ETU1506-M3 50 1000 Antistatic plastic tube VS-ETU1506FP-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information 2L TO-220AC www.vishay.com/doc?95259 2L TO-220 FULL-PAK www.vishay.com/doc?95260 2L TO-220AC www.vishay.com/doc?95391 2L TO-220 FULL-PAK www.vishay.com/doc?95392 Revision: 08-Jul-15 Document Number: 93534 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors True 2 Pin TO-220 FULL-PAK DIMENSIONS in millimeters and inches A ØQ F E Q1 H1 D Q2 θ L1 b1 L b C e J1 SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.53 4.93 0.178 0.194 b 0.71 0.91 0.028 0.036 b1 1.15 1.39 0.045 0.055 C 0.36 0.53 0.014 0.021 D 15.67 16.07 0.617 0.633 E 9.96 10.36 0.392 e 5.08 typical 0.408 0.200 typical F 2.34 2.74 0.092 0.107 H1 6.50 6.90 0.256 0.272 J1 2.56 2.96 0.101 0.117 L 12.78 13.18 0.503 0.519 L1 2.23 2.63 0.088 0.104 ØQ 2.98 3.38 0.117 0.133 Q1 3.10 3.50 0.122 0.138 Q2 14.80 15.20 0.583 0.598 0° 5° 0° 5° Revision: 05-Dec-12 Document Number: 95260 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000