VS-ETX0806-M3, VS-ETX0806FP-M3 Datasheet

VS-ETX0806-M3, VS-ETX0806FP-M3
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Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt®
FEATURES
• Hyperfast recovery time, extremely low Qrr
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
2L TO-220AC
• Fully isolated package (VINS = 2500 VRMS)
2L TO-220 FULL-PAK
• True 2 pin package
• Designed and qualified
JEDEC®-JESD 47
Base
cathode
2
according
to
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
Anode
1
Cathode
DESCRIPTION / APPLICATIONS
2
Anode
1
Cathode
VS-ETX0806FP-M3
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
Package
2L TO-220AC, 2L TO-220FP
IF(AV)
8A
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
VR
600 V
VF at IF
1.5 V
VS-ETX0806-M3
PRODUCT SUMMARY
trr (typ.)
14 ns
TJ max.
175 °C
Diode variation
Single die
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
TEST CONDITIONS
VALUES
UNITS
600
V
VRRM
Average rectified forward current in DC
IF(AV)
FULL-PAK
Non-repetitive peak surge current
IFSM
Operating junction and storage temperatures
TC = 142 °C
8
TC = 105 °C
TJ = 25 °C
A
80
TJ, TStg
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
VBR,
VR
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 8 A
-
2.5
3.4
IF = 8 A, TJ = 150 °C
-
1.5
2.0
VR = VR rated
-
0.02
30
TJ = 150 °C, VR = VR rated
-
21
150
IR = 100 μA
UNITS
V
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
6
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
μA
Revision: 08-Jul-15
Document Number: 93546
1
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VS-ETX0806-M3, VS-ETX0806FP-M3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
MIN.
TYP.
MAX.
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
TEST CONDITIONS
-
14
18
IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V
-
15
24
TJ = 25 °C
-
17
-
-
33
-
-
2.6
-
-
4.3
-
TJ = 25 °C
-
22
-
TJ = 125 °C
-
77
-
-
26
-
ns
-
11
-
A
-
150
-
nC
MIN.
TYP.
MAX.
UNITS
-65
-
175
°C
TJ = 125 °C
Peak recovery current
IRRM
Reverse recovery charge
Qrr
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
TJ = 25 °C
TJ = 125 °C
TJ = 125 °C
Qrr
IF = 8 A
dIF/dt = 200 A/μs
VR = 390 V
IF = 8 A
dIF/dt = 600 A/μs
VR = 390 V
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
FULL-PAK
TEST CONDITIONS
TJ, TStg
RthJC
-
2.0
2.6
-
4.6
5.5
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
70
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
-
0.5
-
-
2
-
-
0.07
-
oz.
-
12
(10)
kgf · cm
(lbf · in)
Weight
6
(5)
Mounting torque
Marking device
Case style 2L TO-220AC
Case style 2L TO-220 FULL-PAK
°C/W
g
ETX0806
ETX0806FP
Revision: 08-Jul-15
Document Number: 93546
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETX0806-M3, VS-ETX0806FP-M3
www.vishay.com
Vishay Semiconductors
100
100
175°C
150°C
Reverse Current - IR (µA)
10
100°C
75°C
0.1
50°C
0.01
25°C
0.001
10
0.0001
0
100
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
Tj = 150°C
1
Junction Capacitance - CT (pF)
Instantaneous Forward Current - IF (A)
Tj = 175°C
125°C
1
Tj = 25°C
10
0.1
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
Forward Voltage Drop - VF (V)
100
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
Thermal Impedance ZthJC (°C/W)
10
D = 0.5
1
D = 0.2
D = 0.1
D = 0.05
0.1
D = 0.02
D = 0.01
0.01
1E-05
Single Pulse
(Thermal Resistance)
1E-04
1E-03
1E-02
1E-01
1E+00
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 08-Jul-15
Document Number: 93546
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VS-ETX0806-M3, VS-ETX0806FP-M3
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Vishay Semiconductors
Thermal Impedance ZthJC (°C/W)
10
D = 0.5
D = 0.2
1
D = 0.1
D = 0.05
Single Pulse
(Thermal Resistance)
D = 0.02
D = 0.01
0.1
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
t1, Rectangular Pulse Duration (Seconds)
Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK)
180
Allowable Case Temperature (°C)
Allowable Case Temperature (°C)
180
160
DC
140
120
100
160
140
DC
120
100
80
60
0
2
4
6
8
10
0
2
4
6
8
10
Average Forward Current - IF(AV)(A)
Average Forward Current - IF(AV)(A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Average Power Loss ( Watts )
22
20
RMS Limit
18
16
14
12
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
10
8
6
4
2
0
0
2
4
6
8
10
12
Average Forward Current - IF(AV) (A)
Fig. 8 - Forward Power Loss Characteristics
Revision: 08-Jul-15
Document Number: 93546
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETX0806-M3, VS-ETX0806FP-M3
www.vishay.com
Vishay Semiconductors
250
40
35
200
If = 8A, 125°C
30
If = 8A, 125°C
Qrr ( nC )
trr ( ns )
150
25
100
20
If = 8A, 25°C
If = 8A, 25°C
50
15
typical value
typical value
0
10
100
100
1000
di F /dt (A/µs )
Fig. 9 - Typical Reverse Recovery vs. dIF/dt
1000
di F /dt (A/µs )
Fig. 10 - Typical Stored Charge vs. dIF/dt
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 12 - Reverse Recovery Waveform and Definitions
Revision: 08-Jul-15
Document Number: 93546
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETX0806-M3, VS-ETX0806FP-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
E
T
X
08
06
FP
-M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Circuit configuration:
3
-
T = TO-220
4
-
X = hyperfast recovery time
5
-
Current code: 08 = 8 A
6
-
Voltage code: 06 = 600 V
7
-
E = single diode
None = TO-220
FP = FULL-PAK
8
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-ETX0806-M3
50
1000
Antistatic plastic tube
VS-ETX0806FP-M3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
2L TO-220AC
www.vishay.com/doc?95259
2L TO-220 FULL-PAK
www.vishay.com/doc?95260
2L TO-220AC
www.vishay.com/doc?95391
2L TO-220 FULL-PAK
www.vishay.com/doc?95392
Revision: 08-Jul-15
Document Number: 93546
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
True 2 Pin TO-220
DIMENSIONS in millimeters and inches
0.002"
0.05 mm
A
A
E
ØP
F
B
Q
H1
D
Term. 4
0.150" REF.
45°
Ø 2.0 mm REF.
L1
b1
L
b
c
60°
1
2
J1
e
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.32
4.57
0.170
0.180
b
0.71
0.91
0.028
0.036
b1
1.15
1.39
0.045
0.055
c
0.36
0.53
0.014
0.021
D
14.99
15.49
0.590
0.610
E
10.04
10.41
0.395
0.410
e
5.08 BSC
0.200 BSC
F
1.22
1.37
0.048
0.054
H1
5.97
6.47
0.235
0.255
J1
2.54
2.79
0.100
0.110
L
13.47
13.97
0.530
0.550
L1 (1)
3.31
3.81
0.130
0.150
ØP
3.79
3.88
0.149
0.153
Q
2.60
2.84
0.102
0.112
Notes
(1) Lead dimension and finish uncontrolled in L
1
• These dimensions are within allowable dimensions of JEDEC TO-220AB rev. J outline dated 3-24-87
• Controling dimension: Inch
Revision: 05-Dec-12
Document Number: 95259
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
True 2 Pin TO-220 FULL-PAK
DIMENSIONS in millimeters and inches
A
ØQ
F
E
Q1
H1
D
Q2
θ
L1
b1
L
b
C
e
J1
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.53
4.93
0.178
0.194
b
0.71
0.91
0.028
0.036
b1
1.15
1.39
0.045
0.055
C
0.36
0.53
0.014
0.021
D
15.67
16.07
0.617
0.633
E
9.96
10.36
0.392
e
5.08 typical
0.408
0.200 typical
F
2.34
2.74
0.092
0.107
H1
6.50
6.90
0.256
0.272
J1
2.56
2.96
0.101
0.117
L
12.78
13.18
0.503
0.519
L1
2.23
2.63
0.088
0.104
ØQ
2.98
3.38
0.117
0.133
Q1
3.10
3.50
0.122
0.138
Q2
14.80
15.20
0.583
0.598

0°
5°
0°
5°
Revision: 05-Dec-12
Document Number: 95260
1
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Revision: 02-Oct-12
1
Document Number: 91000