INFINEON IPB160N04S2L-03

IPB160N04S2L-03
OptiMOS® - T Power-Transistor
Product Summary
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
V DS
40
V
R DS(on),max
2.7
mΩ
ID
160
A
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
PG-TO263-7-3
• Ultra low Rds(on)
• 100% Avalanche tested
Type
Package
Ordering Code
Marking
IPB160N04S2L-03
PG-TO263-7-3
SP0002-18153
P2N04L03
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
160
T C=100 °C2)
160
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
640
Avalanche energy, single pulse
E AS
I D=80 A, R GS=25 Ω
810
mJ
±20
V
300
W
-55 ... 175
°C
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.0
55/175/56
page 1
2006-03-02
IPB160N04S2L-03
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
0.5
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
SMD version, device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
40
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=250 µA
1.2
1.6
2
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
0.1
1
-
10
100
V DS=40 V, V GS=0 V,
T j=125 °C2)
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=80 A,
SMD version
-
2.8
3.7
mΩ
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=80 A,
SMD version
-
2.0
2.7
Rev. 1.0
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2006-03-02
IPB160N04S2L-03
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
6000
-
-
2200
-
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
700
-
Turn-on delay time
t d(on)
-
20
-
Rise time
tr
-
51
-
Turn-off delay time
t d(off)
-
75
-
Fall time
tf
-
30
-
Gate to source charge
Q gs
-
20
28
Gate to drain charge
Q gd
-
46
90
Gate charge total
Qg
-
163
230
Gate plateau voltage
V plateau
-
3.4
-
V
-
-
160
A
-
-
640
-
0.84
1.3
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=20 V, V GS=10 V,
I D=160 A, R G=1.1 Ω
pF
ns
Gate Charge Characteristics2)
V DD=32 V, I D=160 A,
V GS=0 to 5 V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
T C=25 °C
V GS=0 V, I F=80 A,
T j=25 °C
V
1)
Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 243A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2006-03-02
IPB160N04S2L-03
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
160
300
140
250
120
100
I D [A]
P tot [W]
200
150
80
60
100
40
50
20
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
1000
1
1 µs
limited by on-state
resistance
0.5
10 µs
100 µs
100
0.2
Z thJC [K/W]
0.1
I D [A]
1 ms
10
0.1
0.05
0.02
0.01
0.01
single pulse
1
0.001
0.1
1
10
100
0
0
0
0
0
1
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.0
0
10-6
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2006-03-02
IPB160N04S2L-03
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
200
10V
180
12
3.8V
4.5V
4.1V
10
160
3.2V
140
8
I D [A]
120
R DS(on) [mΩ]
3.5V
100
80
3.2V
3.8V
6
3.5V
4
60
4.1V
4.5V
40
3V
20
2.8V
2
0
10V
0
0
1
2
0
3
20
40
V DS [V]
60
80
100
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
200
300
180
250
160
140
200
g fs [S]
I D [A]
120
100
150
80
100
60
40
50
C °175
C °25
20
0
0
0
1
2
3
4
5
Rev. 1.0
0
50
100
150
200
I D [A]
V GS [V]
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2006-03-02
IPB160N04S2L-03
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=60 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
4
2.5
2
3
typ
V GS(th) [V]
R DS(on) [mΩ]
1250µA
2
1.5
250µA
1
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Typ. Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
1000
10000
Ciss
Coss
25 °C
100
I F [A]
C [pF]
175 °C
Crss
1000
10
100
1
0
5
10
15
20
25
30
V DS [V]
Rev. 1.0
0.0
0.5
1.0
1.5
2.0
V SD [V]
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2006-03-02
IPB160N04S2L-03
13 Typ. avalanche energy
14 Typ. gate charge
E AS=f(TJ)
V GS=f(Q gate); I D=160A pulsed
parameter: I D=80A, V DD=25V
parameter: V DD
900
12
800
10
8V
32V
700
8
500
V GS [V]
E AV [mJ]
600
400
300
6
4
200
2
100
0
0
25
75
125
175
0
40
80
120
160
200
Q gate [nC]
T J [°C]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
48
V GS
Qg
46
V BR(DSS) [V]
44
42
V g s(th)
40
38
Q g (th)
Q sw
Q gs
36
-60
-20
20
60
100
140
Q gate
Q gd
180
T j [°C]
Rev. 1.0
page 7
2006-03-02
IPB160N04S2L-03
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
• Pb-free lead plating; RoHS compliant
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
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in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2006-03-02