IPB160N04S2L-03 OptiMOS® - T Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS(on),max 2.7 mΩ ID 160 A • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) PG-TO263-7-3 • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB160N04S2L-03 PG-TO263-7-3 SP0002-18153 P2N04L03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 160 T C=100 °C2) 160 Unit A Pulsed drain current2) I D,pulse T C=25 °C 640 Avalanche energy, single pulse E AS I D=80 A, R GS=25 Ω 810 mJ ±20 V 300 W -55 ... 175 °C V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.0 55/175/56 page 1 2006-03-02 IPB160N04S2L-03 Parameter Values Symbol Conditions Unit min. typ. max. - - 0.5 minimal footprint - - 62 6 cm2 cooling area3) - - 40 Thermal characteristics2) Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.1 1 - 10 100 V DS=40 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=80 A, SMD version - 2.8 3.7 mΩ Drain-source on-state resistance R DS(on) V GS=10 V, I D=80 A, SMD version - 2.0 2.7 Rev. 1.0 page 2 2006-03-02 IPB160N04S2L-03 Parameter Values Symbol Conditions Unit min. typ. max. - 6000 - - 2200 - Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 700 - Turn-on delay time t d(on) - 20 - Rise time tr - 51 - Turn-off delay time t d(off) - 75 - Fall time tf - 30 - Gate to source charge Q gs - 20 28 Gate to drain charge Q gd - 46 90 Gate charge total Qg - 163 230 Gate plateau voltage V plateau - 3.4 - V - - 160 A - - 640 - 0.84 1.3 V GS=0 V, V DS=15 V, f =1 MHz V DD=20 V, V GS=10 V, I D=160 A, R G=1.1 Ω pF ns Gate Charge Characteristics2) V DD=32 V, I D=160 A, V GS=0 to 5 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V 1) Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 243A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2006-03-02 IPB160N04S2L-03 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 160 300 140 250 120 100 I D [A] P tot [W] 200 150 80 60 100 40 50 20 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1000 1 1 µs limited by on-state resistance 0.5 10 µs 100 µs 100 0.2 Z thJC [K/W] 0.1 I D [A] 1 ms 10 0.1 0.05 0.02 0.01 0.01 single pulse 1 0.001 0.1 1 10 100 0 0 0 0 0 1 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 0 10-6 page 4 2006-03-02 IPB160N04S2L-03 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 200 10V 180 12 3.8V 4.5V 4.1V 10 160 3.2V 140 8 I D [A] 120 R DS(on) [mΩ] 3.5V 100 80 3.2V 3.8V 6 3.5V 4 60 4.1V 4.5V 40 3V 20 2.8V 2 0 10V 0 0 1 2 0 3 20 40 V DS [V] 60 80 100 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 200 300 180 250 160 140 200 g fs [S] I D [A] 120 100 150 80 100 60 40 50 C °175 C °25 20 0 0 0 1 2 3 4 5 Rev. 1.0 0 50 100 150 200 I D [A] V GS [V] page 5 2006-03-02 IPB160N04S2L-03 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=60 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 4 2.5 2 3 typ V GS(th) [V] R DS(on) [mΩ] 1250µA 2 1.5 250µA 1 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Typ. Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 1000 10000 Ciss Coss 25 °C 100 I F [A] C [pF] 175 °C Crss 1000 10 100 1 0 5 10 15 20 25 30 V DS [V] Rev. 1.0 0.0 0.5 1.0 1.5 2.0 V SD [V] page 6 2006-03-02 IPB160N04S2L-03 13 Typ. avalanche energy 14 Typ. gate charge E AS=f(TJ) V GS=f(Q gate); I D=160A pulsed parameter: I D=80A, V DD=25V parameter: V DD 900 12 800 10 8V 32V 700 8 500 V GS [V] E AV [mJ] 600 400 300 6 4 200 2 100 0 0 25 75 125 175 0 40 80 120 160 200 Q gate [nC] T J [°C] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 48 V GS Qg 46 V BR(DSS) [V] 44 42 V g s(th) 40 38 Q g (th) Q sw Q gs 36 -60 -20 20 60 100 140 Q gate Q gd 180 T j [°C] Rev. 1.0 page 7 2006-03-02 IPB160N04S2L-03 Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. • Pb-free lead plating; RoHS compliant Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2006-03-02