IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 OptiMOS®-T Power-Transistor Product Summary Features V DS • N-channel - Enhancement mode 55 R DS(on),max (SMD version) • Automotive AEC Q101 qualified ID 15.4 45 V mΩ A • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) PG-TO263-3-2 • Ultra low Rds(on) PG-TO262-3-1 PG-TO220-3-1 • Avalanche tested Type Package Ordering Code Marking IPB45N06S3-16 PG-TO263-3-2 SP0001-02224 3N0616 IPI45N06S3-16 PG-TO262-3-1 SP0001-02217 3N0616 IPP45N06S3-16 PG-TO220-3-1 SP0001-02218 3N0616 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) ID T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 45 Unit A 33 Pulsed drain current2) I D,pulse T C=25 °C 180 Avalanche energy, single pulse3) E AS I D= 27.5 A 95 Drain gate voltage2) V DG 55 Gate source voltage4) V GS ±20 V Power dissipation P tot 65 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.0 mJ 55/175/56 page 1 2005-11-25 IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 Parameter Values Symbol Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 2.3 Thermal resistance, junction ambient, leaded R thJA - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area5) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 55 - - Gate threshold voltage V GS(th) V DS=V GS, I D=30 µA 2.1 3 4 Zero gate voltage drain current I DSS V DS=25 V, V GS=0 V, T j=25 °C - 0.1 1 - 1 100 V DS=25 V, V GS=0 V, T j=125 °C1) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=23 A - 13.5 15.7 mΩ V GS=10 V, I D=23 A, SMD version - 13.2 15.4 Rev. 1.0 page 2 2005-11-25 IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 Parameter Values Symbol Conditions Unit min. typ. max. - 2980 - - 450 - Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 430 - Turn-on delay time t d(on) - 28 - Rise time tr - 61 - Turn-off delay time t d(off) - 26 - Fall time tf - 68 - Gate to source charge Q gs - 23 - Gate to drain charge Q gd - 10 - Gate charge total Qg - 43 57 Gate plateau voltage V plateau - 7.2 - V - - 45 A - - 180 V GS=0 V, V DS=25 V, f =1 MHz V DD=27.5 V, V GS=10 V, I D=45 A, R G=22 Ω pF ns Gate Charge Characteristics2) V DD=11 V, I D=45 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode pulse current2) I S,pulse Diode forward voltage2) V SD V GS=0 V, I F=45 A, T j=25 °C - 1.1 1.3 V Reverse recovery time2) t rr V R=27.5 V, I F=I S, di F/dt =100 A/µs - - - ns Reverse recovery charge2) Q rr V R=27.5 V, I F=I S, di F/dt =100 A/µs - - - nC T C=25 °C 1) Current is limited by bondwire; with an R thJC = 2.3 K/W the chip is able to carry 46A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagrams 12 and 13. 4) Qualified at -5V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2005-11-25 IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 1 Power dissipation 2 Drain current P tot=f(T C); V GS≥6 V I D=f(T C); V GS≥10 V 70 50 60 40 50 30 I D [A] P tot [W] 40 30 20 20 10 10 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1000 101 0.5 0 1 µs limited by on-state resistance 100 10 0.2 10 µs Z thJC [K/W] 0.1 I D [A] 100 µs 1 ms 0.05 -1 10 0.02 10 0.01 -2 10 single pulse 10-3 1 0.1 1 10 100 V DS [V] Rev. 1.0 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2005-11-25 IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS, pulsed parameter: V GS 30 160 8V 7V 9V 140 10 V 25 120 R DS(on) [mΩ] I D [A] 100 80 8V 60 40 20 10V 15 7V 6.5 V 20 6V 5.5 V 10 0 0 5 10 0 15 20 40 V DS [V] 60 80 100 I D [A] 7 Typ. transfer characteristics 8 Drain-source on-state resistance I D=f(V GS); V DS=10 V R DS(on)=f(T j); I D=20 A; V GS=10 V parameter: T j 30 100 25 -55 °C 75 R DS(on) [mΩ] I D [A] 20 25 °C 50 15 175 °C 10 25 5 0 0 2 3 4 5 6 7 8 V GS [V] Rev. 1.0 -60 -20 20 60 100 140 180 T j [°C] page 5 2005-11-25 IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th)=f(T j); V GS=V DS C =f(V DS); V GS=0 V; f =1 MHz parameter: I D 104 4 3.5 Ciss 30µA 3 300µA 2.5 C [pF] V GS(th) [V] Coss 2 103 Crss 1.5 1 0.5 102 0 -60 -20 20 60 100 140 0 180 5 10 T j [°C] 15 20 25 30 V DS [V] 11 Forward characteristics of reverse diode 12 Typ. avalanche characteristics I F=f(V SD), pulsed I AS=f(t AV) parameter: T j parameter: T j(start) 100 1000 25°C 100 I F [A] I AV [A] 100°C 175 °C 10 150°C 25 °C 10 1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V SD [V] Rev. 1.0 1 10 100 1000 t AV [µs] page 6 2005-11-25 IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 13 Typ. avalanche energy 15 Drain-source breakdown voltage E AS=f(T j ) V BR(DSS)=f(T j); I D=1 mA parameter: I D 66 300 15 A 64 250 62 60 200 V BR(DSS) [V] E AS [mJ] 25 A 150 100 45 A 58 56 54 52 50 50 48 46 0 0 50 100 150 -60 200 -20 20 T j [°C] 60 100 140 180 T j [°C] 14 Typ. gate charge 16 Gate charge waveforms V GS=f(Q gate); I D=45 A pulsed parameter: V DD 12 11V 44V V GS 10 Qg V GS [V] 8 6 4 2 Q gate Q gs 0 0 20 40 Q gd 60 Q gate [nC] Rev. 1.0 page 7 2005-11-25 IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 Package Outline P-TO263-3-2: Outline 158 Footprint Packaging Dimensions in mm Rev. 1.0 page 8 2005-11-25 IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 Published by Infineon Technologies AG St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. 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Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2005-11-25