VS-8CWH02FN-M3 Datasheet

VS-8CWH02FN-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 2 x 4 AFRED Pt®
FEATURES
Base
common
cathode
2
TO-252AA (D-PAK)
• 175 °C max. operating junction temperature
• Output rectification freewheeling
• Low forward voltage drop reduced Qrr and
soft recovery
2
1
• Hyperfast recovery time
3
Common
Anode
cathode
• Low leakage current
Anode
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRODUCT SUMMARY
Package
TO-252AA (D-PAK)
IF(AV)
2x4A
VR
200 V
VF at IF
0.71 V
trr (typ.)
23 ns
TJ max.
175 °C
Diode variation
Common cathode
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
200
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 164 °C
8
Non-repetitive peak surge current per leg
IFSM
TJ = 25 °C
80
Operating junction and storage temperatures
TJ, TStg
A
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage per leg
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
200
-
-
IF = 4 A
-
0.87
0.95
IF = 8 A
-
0.95
1.10
IF = 4 A, TJ = 150 °C
-
0.71
0.80
IF = 8 A, TJ = 150 °C
-
0.8
1.0
IR = 100 μA
UNITS
V
VR = VR rated
-
-
4
Reverse leakage current per leg
IR
TJ = 125 °C, VR = VR rated
-
-
40
TJ = 150 °C, VR = VR rated
-
-
80
Junction capacitance per leg
CT
VR = 200 V
-
17
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
μA
Revision: 15-Jun-15
Document Number: 93261
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8CWH02FN-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
TEST CONDITIONS
trr
Peak recovery current
TYP.
MAX.
-
23
27
TJ = 25 °C
-
20
-
TJ = 125 °C
-
27
-
TJ = 25 °C
IRRM
Reverse recovery charge
MIN.
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
TJ = 125 °C
Qrr
IF = 4 A
dIF/dt = 200 A/μs
VR = 160 V
-
2
-
-
3.4
-
UNITS
ns
A
TJ = 25 °C
-
20
-
TJ = 125 °C
-
46
-
MIN.
TYP.
MAX.
UNITS
-65
-
175
°C
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ, TStg
Thermal resistance, per leg
junction to case
per device
RthJC
TEST CONDITIONS
-
2.7
3.2
-
1.35
1.6
Approximate weight
Case style TO-252AA (D-PAK)
10
TJ = 175 °C
1
TJ = 125 °C
TJ = 25 °C
0.1
0.2
0.3
g
0.01
oz.
8CWH02FN
100
100
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Marking device
°C/W
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 75 °C
0.01
TJ = 50 °C
0.001
TJ = 25 °C
0.0001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VFM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
50
100
150
200
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 15-Jun-15
Document Number: 93261
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8CWH02FN-M3
www.vishay.com
Vishay Semiconductors
CT - Junction Capacitance (pF)
100
10
0
50
100
150
200
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
D = 0.5
1
D = 02
D = 0.1
D = 0.05
D = 0.02
Single Pulse
(Thermal Resistance)
D = 0.01
0.1
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1 - Rectangular Pulse Duration (s)
5
180
RMS Limit
175
Average Power Loss (W)
Allowable Case Temperature (°C)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
170
DC
165
Square wave (D = 0.50)
rated VR applied
160
155
4
3
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
2
1
DC
see note (1)
150
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 15-Jun-15
Document Number: 93261
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8CWH02FN-M3
www.vishay.com
Vishay Semiconductors
40
70
35
60
25
4 A, TJ = 125 °C
50
4 A, TJ = 125 °C
Qrr (nC)
trr (nC)
30
20
40
30
4 A, TJ = 25 °C
15
4 A, TJ = 25 °C
20
10
10
5
0
100
0
100
1000
1000
dIFdt (A/μs)
dIFdt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 15-Jun-15
Document Number: 93261
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8CWH02FN-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
8
C
W
H
02
FN
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (8 = 8 A)
3
-
Circuit configuration:
TRL -M3
8
9
C = common cathode
4
-
Package identifier:
W = D-PAK
5
-
H = hyperfast recovery
6
-
Voltage rating (02 = 200 V)
7
-
FN = TO-252AA
8
-
None = tube
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
75
3000
Antistatic plastic tube
VS-8CWH02FNTR-M3
2000
2000
13" diameter reel
VS-8CWH02FNTRL-M3
3000
3000
13" diameter reel
VS-8CWH02FNTRR-M3
3000
3000
13" diameter reel
VS-8CWH02FN-M3
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95016
Part marking information
www.vishay.com/doc?95176
Packaging information
www.vishay.com/doc?95033
SPICE model
www.vishay.com/doc?95375
Revision: 15-Jun-15
Document Number: 93261
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
(5)
A
E
b3
Pad layout
C
A
(3)
0.010 M C A B
c2
A
L3 (3)
Ø1
4
Ø2
4
B
Seating
plane
H
D (5)
1
2
3
(2) L5
b
1
A
c
b2
0.06
MIN.
(1.524)
0.010 M C A B
0.093 (2.38)
0.085 (2.18)
(L1)
Detail “C”
Rotated 90 °CW
Scale: 20:1
H (7)
Lead tip
C
Gauge
plane
L2
SYMBOL
2
0.488 (12.40)
0.409 (10.40)
0.089
MIN.
(2.28)
Detail “C”
2x e
0.245
MIN.
(6.23)
D1
L4
3
0.265
MIN.
(6.74)
E1
MILLIMETERS
INCHES
C Seating
plane
C
Ø
L
NOTES
A1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
MIN.
MAX.
A
2.18
2.39
0.086
0.094
e
A1
-
0.13
-
0.005
H
9.40
10.41
0.370
0.410
1.40
1.78
0.055
0.070
2.29 BSC
MIN.
MAX.
0.090 BSC
b
0.64
0.89
0.025
0.035
L
b2
0.76
1.14
0.030
0.045
L1
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
L3
0.89
1.27
0.035
0.050
c2
0.46
0.89
0.018
0.035
L4
-
1.02
-
0.040
3
2.74 BSC
L2
0.51 BSC
NOTES
0.108 REF.
0.020 BSC
D
5.97
6.22
0.235
0.245
5
L5
1.14
1.52
0.045
0.060
D1
5.21
-
0.205
-
3
Ø
0°
10°
0°
10°
E
6.35
6.73
0.250
0.265
5
Ø1
0°
15°
0°
15°
E1
4.32
-
0.170
-
3
Ø2
25°
35°
25°
35°
3
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC outline TO-252AA
Revision: 05-Dec-12
Document Number: 95016
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000