1-A Dual-HBD (Dual-Half-Bridge Driver) TLE 4207 Overview Features • Delivers up to 0.8 A continuous • Optimized for DC motor management applications • Very low current consumption in stand-by (Inhibit) mode • Low saturation voltage; typ.1.2 V total @ 25 °C; 0.4 A • Output protected against short circuit • Error flag diagnosis • Overvoltage lockout and diagnosis • Undervoltage lockout • CMOS/TTL compatible inputs with hysteresis • No crossover current • Internal clamp diodes • Overtemperature protection with hysteresis and diagnosis • Enhanced power P-DSO-Package P-DSO-14-4 P-DSO-20-6 Type Ordering Code Package TLE 4207 G Q67006-A9275 P-DSO-14-4 TLE 4207 GL on request P-DSO-20-6 Description The TLE 4207 is a fully protected Dual-Half-Bridge-Driver designed specially for automotive and industrial motion control applications. The part is built using the Siemens bipolar high voltage power technology DOPL. The actuator (DC motor) can be connected direct between the halfbridges. Operation modes forward (cw), reverse (ccw), brake and high impedance are invoked from a standard interface. The standard enhanced power P-DSO-14 package meets the application requirements and saves PCB-board space and costs. Furthermore the built in features like diagnosis, over- and undervoltage-lockout, shortcircuit-protection, over-temperature-protection and the very low quiescent current in stand-by mode will open a wide range of automotive and industrial applications. Semiconductor Group 1 1998-02-01 TLE 4207 VS OUT2 GND GND GND IN2 INH 1 14 2 13 3 12 TLE 4 11 4207G 5 10 6 9 7 8 VS OUT2 N.C. GND GND GND GND N.C. IN2 INH N.C. OUT1 GND GND GND IN1 EF AEP02303 1 2 3 4 5 6 7 8 9 10 TLE 4207GL 20 19 18 17 16 15 14 13 12 11 N.C. OUT1 N.C. GND GND GND GND N.C. IN1 EF AEP02304 Figure 1 Pin Configuration (top view) Pin Definitions and Functions Pin No. Pin No. Symbol Function P-DSO-14-4 P-DSO-20-6 1 1 VS Power supply voltage; positive reference potential for blocking capacitor 2 2 OUT2 Power-output 2; full short circuit protected; with integrated clamp diodes 3, 4, 5, 10, 11, 12 4, 5, 6, 7, 14, 15, 16, 17 GND Ground; negative reference potential for blocking capacitor 6 9 IN2 Input channel 2; controls OUT2 (not inverted) 7 10 INH Inhibit input; low = IC in stand-by 8 11 EF Error Flag output; open collector; low = error 9 12 IN1 Input channel 1; controls OUT1 (not inverted) 13 19 OUT1 Power output 1; full short circuit protected; with integrated clamp diodes 14 3, 8, 13, 18, 20 N.C. Not connected Semiconductor Group 2 1998-02-01 TLE 4207 VS 1 INH 7 Inhibit DRV1 EF IN1 IN2 8 9 6 13 Fault-Detection INH 0 1 1 1 1 IN1 X 0 0 1 1 IN2 X 0 1 0 1 OUT1 OUT2 Z Z L L L H H L H H Figure 2 DRV2 2 3, 4, 5, 10, 11, 12 GND TLE 4207G OUT1 OUT2 AEB02080 Block Diagram Semiconductor Group 3 1998-02-01 TLE 4207 Functional Truth Table INH IN1 IN2 OUT1 OUT2 Mode 0 X X Z Z Stand-By 1 1 1 1 0 0 1 1 0 1 0 1 L L H H L H L H Brake LL CW CCW Brake HH IN: 0 = Logic LOW 1 = Logic HIGH X = don’t care OUT: Z = Output in tristate condition L = Output in sink condition H = Output in source condition Diagnosis EF Error 1 0 0 no error over temperature over voltage Semiconductor Group 4 1998-02-01 TLE 4207 Electrical Characteristics Absolute Maximum Ratings Parameter Symbol Limit Values Unit Remarks min. max. VS VS VI – 0.3 45 V – –1 – V –5 20 V t < 0.5 s; IS > – 2 A 0 V < VS < 45 V VEF – 0.3 20 V 0 V < VS < 45 V IOUT1-2 IOUT1-2 IOUT1-2 IOUT1-2 – – A internally limited – – A internally limited –1 1 A – –2 5 mA – Tj Tstg – 40 150 °C – – 50 150 °C – Rthj-pin RthjA – 25 K/W measured to pin 5 – 65 K/W – Voltages Supply voltage Supply voltage Logic input voltages (IN1; IN2; INH) Logic output voltage (EF) Currents Output current (cont.) Output current (peak) Output current (diode) Output current (EF) Temperatures Junction temperature Storage temperature Thermal Resistances Junction pin Junction ambient Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. Semiconductor Group 5 1998-02-01 TLE 4207 Operating Range Parameter Symbol Limit Values min. VS VUV OFF 18 Supply voltage increasing VS VS VI – 0.3 Tj Logic input voltage (IN1; IN2; INH) Junction temperature Remarks V After VS rising above VUV ON max. Supply voltage Supply voltage decreasing Unit Outputs in tristate – 0.3 VUV ON V VUV OFF V –2 18 V – – 40 150 °C – Outputs in tristate Note: In the operating range the functions given in the circuit description are fulfilled. Semiconductor Group 6 1998-02-01 TLE 4207 Electrical Characteristics 8 V < VS < 18 V; INH = High; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C; unless otherwise specified Parameter Symbol Limit Values Unit Test Condition min. typ. max. IS IS – 20 50 µA INH = LOW – 20 30 µA INH = LOW; VS = 13.2 V; Tj = 25 °C – 10 20 mA – Supply current IS IS – – 30 mA Supply current IS – – 50 mA IOUT1 = 0.4 A IOUT2 = – 0.4 A IOUT1 = 0.8 A IOUT2 = – 0.8 A – 6.5 7.5 V 5.0 6 – V – 0.5 – V – 20 24 V 18.0 19.5 – V – 0.5 V Current Consumption Quiescent current Quiescent current Supply current Over- and Under Voltage Lockout UV Switch ON voltage UV Switch OFF voltage UV ON/OFF hysteresis OV Switch OFF voltage OV Switch ON voltage OV ON/OFF hysteresis Semiconductor Group VUV ON VUV OFF VUV HY VOV OFF VOV ON VOV HY 7 – VS increasing VS decreasing VUV ON – VUV OFF VS increasing VS decreasing VOV OFF – VOV ON 1998-02-01 TLE 4207 Electrical Characteristics (cont’d) 8 V < VS < 18 V; INH = High; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C; unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Test Condition Outputs OUT1-2 Saturation Voltages Source (upper) IOUT = – 0.2 A VSAT U – 0.85 1.15 V Tj = 25 °C Source (upper) IOUT = – 0.4 A VSAT U – 0.90 1.20 V Tj = 25 °C Sink (upper) IOUT = – 0.8 A VSAT U – 1.10 1.50 V Tj = 25 °C Sink (lower) IOUT = 0.2 A VSAT L – 0.15 0.23 V Tj = 25 °C Sink (lower) IOUT = 0.4 A VSAT L – 0.25 0.40 V Tj = 25 °C Sink (lower) IOUT = 0.8 A VSAT L – 0.45 0.75 V Tj = 25 °C VSAT VSAT VSAT – 1 1.4 V – 1.2 1.7 V – 1.6 2.5 V VSAT = VSAT U + VSAT L VSAT = VSAT U + VSAT L VSAT = VSAT U + VSAT L VFU ILKU VFL – 1 1.5 V – – 5 mA – 0.9 1.4 V Total Drop Total Drop Total Drop IOUT = 0.2 A IOUT = 0.4 A IOUT = 0.8 A Clamp Diodes Forward voltage; upper Upper leakage current Forward voltage; lower IF = 0.4 A IF = 0.4 A1) IF = 0.4 A Notes see page 10. Semiconductor Group 8 1998-02-01 TLE 4207 Electrical Characteristics (cont’d) 8 V < VS < 18 V; INH = High; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C; unless otherwise specified Parameter Symbol Limit Values Unit Test Condition min. typ. max. VIH VIL VIHY IIH IIL – 2 3 V – 1 1.5 – V – – 0.5 – V – –2 – 10 µA – 100 – 20 – 5 µA VI = 5 V VI = 0 V VIH VIL VIHY IIH IIL – 2.7 3.5 V – 1 2 – V – – 0.7 – V – – 100 250 µA – 10 – 10 µA VINH = 5 V VINH = 0 V VEFL IEFLK – 0.2 0.4 V – – 10 µA Input-Interface Logic Inputs IN1; IN2 H-input voltage L-input voltage Hysteresis of input voltage H-input current L-input current Logic Input INH H-input voltage L-input voltage Hysteresis of input voltage H-input current L-input current Error-Flag EF L-output voltage level Leakage current Semiconductor Group 9 IEF = 2 mA 0 V < VEF < 7 V 1998-02-01 TLE 4207 Electrical Characteristics (cont’d) 8 V < VS < 18 V; INH = High; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C; unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Test Condition Thermal Shutdown Thermal shutdown junction temperature TjSD 150 175 200 °C – Thermal switch-on junction temperature TjSO 120 – 170 °C – Temperature hysteresis ∆T – 30 – K – 1) Guaranteed by design. Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at TA = 25 °C and the given supply voltage. Semiconductor Group 10 1998-02-01 TLE 4207 Watchdog Reset Q RQ 10 k Ω WD D CQ 22 µF I TLE 4268G CD 100 nF DO1 1N4001 GND VS = 12 V CS 22 µF R VCC VS 1 INH 7 Inhibit DRV1 EF 8 13 OUT1 Fault-Detection µP M1 IN1 9 IN2 6 INH 0 1 1 1 1 IN1 X 0 0 1 1 IN2 X 0 1 0 1 OUT1 OUT2 Z Z L L L H H L H H DRV2 2 OUT2 3, 4, 5, 10, 11, 12 TLE 4207G GND Figure 3 AES02081 Application Circuit Semiconductor Group 11 1998-02-01 TLE 4207 Diagrams Quiescent current IS over Temperature ΙS Saturation Voltage of Source VSAT U over Temperature AED02307 50 AED02308 1500 V SAT U µA VS = 14 V 1250 Ι OUT = 800 mA 40 mV 1000 Ι OUT = 400 mA 750 Ι OUT = 200 mA 30 20 500 V S = 18 V V S = 13.2 V 10 250 VS = 8 V 0 -50 0 50 0 -50 100 ˚C 150 0 50 Tj Tj Saturation Voltage of Sink VSAT L over Temperature V SAT L Total Drop at outputs VSAT over Temperature AED02309 1000 100 ˚C 150 AED02310 2000 V SAT VS = 14 V VS = 14 V mV mV 750 1500 Ι OUT = 800 mA Ι OUT = 400 mA Ι OUT = 800 mA 500 Ι OUT = 200 mA 1000 Ι OUT = 400 mA 500 250 Ι OUT = 200 mA 0 -50 0 50 0 -50 100 ˚C 150 50 100 ˚C 150 Tj Tj Semiconductor Group 0 12 1998-02-01 TLE 4207 Package Outlines P-DSO-14-4 (Plastic Dual Small Outline Package) 1.27 0.1 0.35 +0.15 2) 8˚ max. 4 -0.2 0.19 +0.06 1.75 max 1.45 -0.2 0.2 -0.1 0.35 x 45˚ 1) 0.4 +0.8 0.2 14x 6 ±0.2 14 8 1 7 8.75 -0.21) Index Marking 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Does not include dambar protrusion of 0.05 max. per side Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group 13 GPS05093 Dimensions in mm 1998-02-01 TLE 4207 1.27 0.35 x 8˚ ma 7.6 -0.2 1) +0.09 0.35 x 45˚ 0.23 2.65 max 2.45 -0.2 0.2 -0.1 P-DSO-20-6 (Plastic Dual Small Outline Package) 0.4 +0.8 +0.15 2) 0.2 24x 20 0.1 10.3 ±0.3 11 GPS05094 1 12.8 1) 10 -0.2 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group 14 Dimensions in mm 1998-02-01