TLE 4202 B 2-A DC Motor Driver Bipolar IC Overview Features • • • • • • • Drives motors up to 2 A Integrated free-wheeling diodes 2.5 A Short-circuit proof to ground Overtemperature protection Low saturation voltages through bootstrap Wide temperature range Suitable for applications in automotive engineering P-TO220-7-1 Type Ordering Code Package TLE 4202 B Q67000-A8225 P-TO220-7-1 Description The two power comparators can switch magnets, motors or other loads either by being separated from each other or by being combined to a full-bridge circuit. The IC is designed for application in motor vehicles. It can be applied at package temperatures between – 40 °C and 130 °C. The IC contains two amplifiers featuring a typical open-loop voltage gain of 80 dB at 500 Hz. The input stages are PNP differential amplifiers thus resulting in a common-mode input voltage range from 0 V to approx. the value of VS and in a maximum input differential voltage of VS. To obtain low saturation voltages at the sink circuit, the drive circuit of the sink transistor is connected to the supply voltage. An SOA protective circuit protects the IC against ground short-circuits. At chip temperatures above approx. 160 °C the source transistors are turned off. Semiconductor Group 1 1998-02-01 TLE 4202 B 1 2 3 4 5 6 7 Ι1 Ι3 GND V S Q1 Q2 Ι2 AEP00612 Figure 1 Pin Configuration (top view) Semiconductor Group 2 1998-02-01 TLE 4202 B Pin Definitions and Functions Pin No. Symbol Function 1 I1 Input 1 Non-inverting input 1, to be connected to pin 2 and pin 3 according to general rules 2 I3 Inverting input 3 Inverting inputs of the two comparators; internally connected to reference voltage across 50 kΩ (typ. 1.7 V) 3 Q1 Output Q1 Push-pull output B DC-short-circuit proof to ground. Integrated free-wheel diodes to ground and to supply voltage 4 GND Ground 5 Q2 Output Q2, see pin 3 6 VS Supply voltage Has to be blocked to ground with a ceramic capacitor of at least 100 nF directly at the pins of the ICs 7 I2 Input 2 Non-inverting input 2; see pin 1 Semiconductor Group 3 1998-02-01 TLE 4202 B Supply Voltage VS 6 VS 80 dB Input Ι1 0 dB 1 + - Inverting 2 Input Ι 3 50 k Ω 3 Amp 1 +1.7 V Output Q1 Power Limiter and Temperature Protection TLE 4202B VS Input Ι 2 7 + - 5 Amp 2 Output Q2 0 dB 80 dB 4 GND Figure 2 AEB00613 Block Diagram Semiconductor Group 4 1998-02-01 TLE 4202 B Absolute Maximum Ratings TC = – 40 to 130 °C Parameter Supply voltage Output current of sink transistors TC ≤ 85 °C Output current of source transistors internally limited Diode peak currents to + VS to ground Voltage at pins I1, I2, I3 Voltage at pins Q1, Q2 1) Junction temperature Storage temperature Symbol Limit Values Unit min. max. VS – 40 V IQ – 2.5 A IQ – – – IF + IF – – – 2.5 2.5 A A V1, 2, 7 – 0.3 VS V V3, 5 Tj Tstg – – V – – 55 150 125 °C °C VS TC 3.5 17 V – 40 – – 130 °C °C 30 – dB – 4 K/W Operating Range Supply voltage Case temperature during operation RL ≥ 6 Ω, VS = 7 … 16 V RL ≥ 9 Ω, VS = 16 V Voltage amplification (at negative feedback with external connection) Thermal resistance system - case 1) VV Rth SC The output voltages are kept within a permissible range by free-wheel diodes Outputs Q1 and Q2 short-circuit proof to ground RL: Resistance between output 1 and output 2 Semiconductor Group 5 1998-02-01 TLE 4202 B Characteristics VS = 13 V; Tj = 25 °C Parameter Symbol Limit Values Unit Test Condition Test Circuit min. typ. max. – 50 15 80 25 – mA dB S=1 f = 500 Hz VS ≤ 7 V ≤ 16 V TC = – 40 °C to 110 °C 1 1 II 1, 7 II 2 – II 2 RI 1, 7 VI 2 – – – 1 1.4 1 35 230 5 1.7 3 70 300 – 2 µA µA µA MΩ V VI 1, 12 = 0 VI 2 = 0; VI 1, 7 = VS VI 2 ≤ VS; VI 1, 7 = 0 V f 2 1 – 1 1 VI 0 – 20 – 20 mV General Data Quiescent current IS GVO Open-loop gain Input Characteristics Input current (pins I1, I2) Input current Input resistance Input reference voltage Input offset voltage Semiconductor Group = 1 kHz I2 = 0; VI 1, 7 = 0 V 3 – 6 1998-02-01 TLE 4202 B Characteristics (cont’d) VS = 13 V; Tj = 25 °C Parameter Symbol Limit Values Unit Test Condition Test Circuit IQ = – 0.3 A;S1 = 1 IQ = – 1.0 A;S1 = 1 IQ = – 2 A; S1 = 1 IQ = 0.3 A; S1 = 2 IQ = 1 A; S1 = 2 IQ = 2 A; S1 = 2 VQ = 0 V 2 2 2 2 2 2 2 min. typ. max. VSato VSatu – – – – VSatu ISC – – 0.9 1.2 1.5 0.25 0.5 1 1.25 1 1.6 2.1 0.4 0.75 1.3 1.6 V V V V V V A VF + VF – SR – – – 1 0.9 6 1.3 1.2 – IF = IQ = 1 A V IF = IQ = 1 A V V/µs – 2 2 1 SR – 6 – V/µs – 1 – – – – 1.5 1.5 3 1.5 – – – – µs µs µs µs – – – – 1 1 1 1 – 15 30 mA S=1 1 Output Characteristics Saturation voltages Source operation VSato VSato measured to VS Sink operation Short-circuit current Diode forward voltage to + VS to ground Slew rate falling edge Slew rate rising edge Switching Times Rise time of VQ Fall time of VQ Switch-ON delay Switch-OFF delay tr tf tON tOFF Quiescent current IS Semiconductor Group 7 1998-02-01 TLE 4202 B Characteristics VS ≤ 7 V to 17 V; TC = – 40 to 110 °C Parameter Symbol Limit Values Unit Test Condition Test Circuit IQ = – 0.3 A;S = 1 IQ = – 1 A; S = 1 IQ = – 2 A; S = 1 IQ = 0.3 A; S1 = 2 IQ = 1 A; S1 = 2 IQ = 2 A; S1 = 2 VQ = 0 V TC = 25 °C to 2 2 2 min. typ. max. – – – 0.9 1.2 1.5 1.2 1.8 2.4 V V V – – – 0.25 0.5 1.2 0.60 1.1 2 V V V – – 3.5 V Saturation Voltage Source operation VSato VSato measured to VS Sink operation Short-circuit current VSato VSatu VSatu VSatu – ISC 2 2 2 – 110 °C Semiconductor Group 8 1998-02-01 TLE 4202 B + VS TDB 7805 100 µF 6 100 nF 510 Ω 1 0 0 VΙ 1 1 S 2 V12 Ι 12 + - Amp 1 1000 µF 3 V Q1 220 nF 8Ω TLE 4202B - 7 +Amp 2 1000 µF 5 V Q2 220 nF 8Ω 510 Ω 4 Figure 3 AES00614 Test Circuit 1 Semiconductor Group 9 1998-02-01 TLE 4202 B + VS 6 100 µF 1 kΩ 1 2 1 S1 + - Amp 1 3 2 - 7 +Amp 2 VQ3 S2 TLE 4202 Ι Q = - Ι SC 5 100 nF 47 Ω/ 10 W A S1 2 1 VQ5 1kΩ 4 AES00615 VSato = VS - VQ3/5 VSatu = VQ3/5 Ι SC = - Ι Q Figure 4 Test Circuit 2 Semiconductor Group 10 1998-02-01 TLE 4202 B +11.3 V 100 nF 100 µF 50 Ω 50 Ω 4.95 kΩ 6 VΙ 0 1 + - 2 Amp 1 100 x V Ι 0 TLE 4202B - 7 3 +Amp 2 5 100 x V Ι 0 VΙ 0 4.95 k Ω 4 100 µF 50 Ω 50 Ω 100 n F AES00616 -1.7 V Figure 5 Test Circuit 3 Semiconductor Group 11 1998-02-01 TLE 4202 B 13 V 6 1 V Ι1 + - 220 nF 2 100 µF 3 Amp 1 TLE 4202B VΙ 2 220 nF 1Ω 220 nF 1Ω M - 7 VQ1 100 nF 5 + Amp 2 VQ2 4 AES00617 Figure 6 Application Circuit V 5 VΙ 0 t V VQ/V 0.9 0.5 0.1 0 tF tR t ON Figure 7 t OFF t AET00611 Diagrams Semiconductor Group 12 1998-02-01 TLE 4202 B Saturation Voltage versus Output Current Saturation Voltage versus Temperature AED01340 1.6 V SAT V V SAT 1.4 V 1.4 V S = 13 V ΙL = 1 A 1.2 1.2 V Sato V Sato 1.0 1.0 0.8 0.8 0.6 0.6 V S = 13 V T C = 25 ˚C 0.4 V Satu 0.0 0.5 1.0 0.2 1.5 2.0 0.0 -40 A 2.5 ΙL Semiconductor Group V Satu 0.4 0.2 0.0 AED01341 1.6 13 0 40 80 120 ˚C 160 Tj 1998-02-01 TLE 4202 B Package Outlines P-TO220-7-1 (Plastic Transistor Single Outline) 10 +0.4 10.2 -0.2 1 x 45˚ +0.1 1.27 +0.1 8.6 ±0.3 0.4 +0.1 1.27 0.6 +0.1 1) 4.5 ±0.4 0.6 M 7x 8.4 ±0.4 1) 0.75 -0.15 at dam bar (max 1.8 from body) 1) 0.75 -0.15 im Dichtstegbereich (max 1.8 vom Körper) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Semiconductor Group 15.4 ±0.3 8.8 -0.2 2.6 7 10.2 ±0.3 1 16 ±0.4 19.5 max 2.8 3.75 4.6 -0.2 14 GPT05108 Dimensions in mm 1998-02-01