BAT 63-099R Silicon Schottky Diodes • Zero bias diode array for mixer and detectors up to GHz frequencies • Crossover ring quad Type Marking Ordering Code BAT 63-099RSN Q62702-A1105 Pin Configuration Package 1=A SOT-143 2=C Maximum Ratings Parameter Symbol Diode reverse voltage VR 40 V Forward current IF 40 mA Total power dissipation, BAT17W TA ≤ 97°C Values Unit Ptot mW Total power dissipation, BAT17-04...06W TS ≤ 92°C Ptot Junction temperature Tj Operating temperature range Top Storage temperature Tstg 150 °C - 55 ... + 150 Thermal Resistance Junction - ambient, BAT17W RthJA Junction - ambient, BAT17-04W...06W RthJA Junction - soldering poin, BAT17W RthJS Junction - soldering point, BAT17-04W...06W RthJS Semiconductor Group 1 K/W Feb-01-1996 BAT 63-099R Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC characteristics Breakdown voltage V(BR) V IR µA I(BR) = 100 µA Reverse current VR = 40 V, TA = 25 °C Forward voltage - V - 0.85 1 CT VR = 0 , f = 1 MHz Differential forward resistance 10 VF IF = 2 mA Diode capacitance - pF - RF 0.35 0.6 OHM IF = 5 mA, f = 100 MHz Semiconductor Group 2 Feb-01-1996 BAT 63-099R Forward current IF = f (VF) Diode capacitance CT = f (VR) f = 1MHz 10 2 0.5 mA IF CT 10 1 TA = 25°C TA = 85°C TA = 125°C pF 0.3 10 0 0.2 10 -1 0.1 0.0 10 -2 0.0 0.2 0.4 0.6 V 1.0 VF 0 5 10 15 20 V 30 VR Leakage current IR = f (VR) TA = Parameter 10 3 uA IR TA = 125°C 10 2 TA = 85°C 10 1 10 0 10 -1 0 TA = 25°C 5 10 15 Semiconductor Group 20 25 30 V VR 40 3 Feb-01-1996 BAT 63-099R Package Semiconductor Group 4 Feb-01-1996