BAT 17W Silicon Schottky Diodes 3 • For mixer applications in the VHF / UHF range • For high-speed switching applications 2 1 BAT 17W BAT 17-04W BAT 17-05W VSO05561 BAT 17-06W Type Marking Ordering Code Pin Configuration Package BAT 17W 53s Q62702-A1271 1=A 2 n.c. 3=C BAT 17-04W 54s Q62702-A1272 1 = A1 2 = C2 3 = C1/A2 BAT 17-05W 55s Q62702-A1273 1 = A1 2 = A2 3 = C1/2 BAT 17-06W 56s Q62702-A1274 3 = C1 2 = C2 3 = A1/2 SOT-323 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 4 Forward current IF 130 mA Total power dissipation 1) BAT 17W , T A ≤ 97 °C Ptot BAT 17-04W, -05W, -06W , TS ≤ 92 °CPtot 150 mW Junction temperature Tj 150 Operating temperature range Top - 55 ...+150 Storage temperature Tstg - 55 ...+150 V 150 °C Thermal Resistance Junction - ambient 1) BAT 17W RthJA ≤ 435 Junction - ambient 1) BAS 17-04W ... RthJA ≤ 550 Junction - soldering point BAT 17W RthJS ≤ 355 Junction - soldering point BAT 17-04W ... RthJS ≤ 390 K/W 1) Package mounted on alumina 15mm x 17.6mm x 0.7mm) Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAT 17W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 4 - - DC characteristics Breakdown voltage V(BR) V I (BR) = 10 µA Reverse current µA IR VR = 3 V - - 0.25 VR = 4 V - - 10 - - 1.25 Reverse current IR nA VR = 3 V, TA = 60 °C Forward voltage mV VF I F = 0.1 mA 200 275 350 I F = 1 mA 250 340 450 I F = 10 mA 350 425 600 0.4 0.55 0.75 pF - 8 15 Ω AC characteristics Diode capacitance CT VR = 1 V, f = 1 MHz Differential forward resistance rf I F = 5 mA, f = 100 kHz Semiconductor Group Semiconductor Group 22 Sep-04-1998 1998-11-01 BAT 17W Forward current IF = f (V F) Diode capacitance CT = f (VR) f = 1MHz T A = parameter 10 2 0.7 mA pF 10 1 CT IF TA = 25°C TA = 85°C TA = 125°C 10 0 0.5 0.4 0.3 10 -1 0.2 10 -2 0.0 0.2 0.4 0.6 V 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1.0 VF V 5.0 VR Leakage current I R = f (V R) T A = Parameter 10 2 uA 10 1 IR 125°C 10 0 85°C 10 -1 10 -2 25°C 10 -3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 VR Semiconductor Group Semiconductor Group 33 Sep-04-1998 1998-11-01