BAT 68-03W Silicon Schottky Diode Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching Type Marking Ordering Code BAT 68-03W K Q62702Q62702-A1046 Pin Configuration Package 1=A SOD-323 2=K Maximum Ratings Parameter Symbol Diode reverse voltage VR 8 V Forward current IF 130 mA Total Power dissipation Ptot TS = 95 °C Values Unit mW 150 Junction temperature Tj Operating temperature range Top - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance RthJA 445 Junction - soldering point RthJS 365 Semiconductor Group 1 Junction ambient 1) K/W Mar-04-1996 BAT 68-03W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC characteristics V(BR) Breakdown voltage I(BR) = 10 µA V 8 - - IR Reverse current µA VR = 1 V, TA = 25 °C - - 0.1 VR = 1 V, TA = 60 °C - - 1.2 VF Forward voltage mV IF = 1 mA - 318 340 IF = 10 mA 340 390 500 CT Diode capacitance VR = 0 , f = 1 MHz pF - - 1 Ω RF Differential forward resistance IF = 5 mA - - 10 Forward current IF = f (TA*;TS) *): mounted on alumina 15mm x 16.7mm x 0.7mm 200 mA IF 160 140 120 TA 100 TS 80 60 40 20 0 0 20 40 60 Semiconductor Group 80 100 120 °C 150 TA ,TS 2 Mar-04-1996 BAT 68-03W Permissible Pulse Load RTHJS = f(tp) Permissible Pulse Load IFmax/IFDC = f(tp) 10 2 10 3 K/W RthJS IFmax/IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Forward Current IF = f(VF) Semiconductor Group 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Reverse current IR = f (TA) 3 Mar-04-1996 BAT 68-03W Diode capacitance CT = f (VR) f = 1MHz Semiconductor Group Differential forward resistance rf = f(IF) f = 10kHz 4 Mar-04-1996 BAT 68-03W Package Semiconductor Group 5 Mar-04-1996