5-V Low-Drop Voltage Regulator TLE 4275 Features • • • • • • • • • Output voltage 5 V ± 2% Very low current consumption Power-on and undervoltage reset Reset low down to VQ = 1 V Very low-drop voltage Short-circuit-proof Reverse polarity proof Suitable for use in automotive electronics ESD protection > 4 kV Type Ordering Code P-TO252-5-1 Package • TLE 4275 D Q67006-A9354 P-TO252-5-1 (SMD) • TLE 4275 G Q67006-A9343 P-TO263-5-1 (SMD) • TLE 4275 Q67000-A9342 P-TO220-5-11 • TLE 4275 S Q67000-A9442 P-TO220-5-12 P-TO263-5-1 • New type Functional Description The TLE 4275 is a monolithic integrated low-drop voltage regulator in a 5 pin TO-package. An input voltage up to 45 V is regulated to VQ,nom = 5.0 V. The IC is able to drive loads up to 450 mA and is short-circuit proof. At overtemperature the TLE 4275 is turned off by the incorporated temperature protection. A reset signal is generated for an output voltage VQ,rt of typ. 4.65 V. The delay time can be programmed by the external delay capacitor. P-TO220-5-11 P-TO220-5-12 Data Sheet Version 1.3 1 2001-04-24 TLE 4275 Dimensioning Information on External Components The input capacitor CI is necessary for compensation of line influences. Using a resistor of approx. 1 Ω in series with CI, the oscillating of input inductivity and input capacitance can be damped. The output capacitor CQ is necessary for the stability of the regulation circuit. Stability is guaranteed at values CQ ≥ 22 µF and an ESR of ≤ 5 Ω within the operating temperature range. Circuit Description The control amplifier compares a reference voltage to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The IC also incorporates a number of internal circuits for protection against: • Overload • Over-temperature • Reverse polarity Data Sheet Version 1.3 2 2001-04-24 TLE 4275 P-TO252-5-1 (D-PAK) P-TO220-5-11 P-TO220-5-12 GND 1 5 Ι RO D Q AEP02580 P-TO263-5-1 (SMD) Ι GND Q RO D Ι GND Q RO D IEP02527 Ι AEP02756 GND Q D RO IEP02528 Figure 1 Pin Configuration (top view) Pin Definitions and Functions Pin No. Symbol Function 1 I Input; block to ground directly at the IC by a ceramic capacitor. 2 RO Reset Output; open collector output 3 GND Ground; Pin 3 internally connected to heatsink 4 D Reset Delay; connect capacitor to GND for setting delay time 5 Q Output; block to ground with a ≥ 22 µF capacitor, ESR < 5 Ω at 10 kHz. Data Sheet Version 1.3 3 2001-04-24 TLE 4275 Saturation Control and Protection Circuit Temperature Sensor I 1 5 Bandgap Reference D Q Buffer 4 Reset Generator 2 RO 3 AEB02425 Figure 2 Block Diagram Data Sheet Version 1.3 4 2001-04-24 TLE 4275 Absolute Maximum Ratings Parameter Symbol Limit Values min. max. Unit Test Condition Voltage Regulator Input Voltage VI – 42 45 V – Current II – – – Internally limited VQ IQ – 1.0 16 V – – – – Internally limited VRO IRO – 0.3 25 V – –5 5 mA – VD ID – 0.3 7 V – –2 2 mA – Tj Tstg – 40 150 °C – – 50 150 °C – Output Voltage Current Reset Output Voltage Current Reset Delay Voltage Current Temperature Junction temperature Storage temperature Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. Data Sheet Version 1.3 5 2001-04-24 TLE 4275 Operating Range Parameter Symbol Limit Values min. max. Unit Remarks Input voltage VI 5.5 42 V – Junction temperature Tj – 40 150 °C – Rthjc Rthj-a Rthj-a Rthj-a – 4 K/W – – 53 K/W TO2631) – 78 K/W TO2521) – 65 K/W TO220 Thermal Resistance Junction case Junction ambient Junction ambient Junction ambient 1) Worst case, regarding peak temperature; zero airflow; mounted on a PCB FR4, 80 area 300 mm2 × 80 × 1.5 mm3, heat sink Characteristics VI = 13.5 V; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values min. typ. max. Unit Measuring Condition Output Output voltage VQ 4.9 5.0 5.1 V 5 mA < IQ < 400 mA 6 V < VI < 28 V Output voltage VQ 4.9 5.0 5.1 V 5 mA < IQ < 200 mA 6 V < VI < 40 V Output current limitation1) IQ 450 700 – mA – Current consumption; Iq = II – IQ Iq – 150 200 µA Current consumption; Iq = II – IQ Iq – 150 220 µA Current consumption; Iq = II – IQ Iq – 5 10 mA IQ = 1 mA; Tj = 25 °C IQ = 1 mA; Tj ≤ 85 °C IQ = 250 mA Current consumption; Iq – 12 22 mA IQ = 400 mA Iq = II – IQ Data Sheet Version 1.3 6 2001-04-24 TLE 4275 Characteristics (cont’d) VI = 13.5 V; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values min. typ. max. Unit Measuring Condition Drop voltage1) Vdr – 250 500 mV IQ = 300 mA Vdr = VI – VQ IQ = 5 mA to 400 mA Load regulation ∆VQ – 15 30 mV Line regulation ∆VQ – 15 5 15 mV Power supply ripple rejection PSRR – 60 – dB Temperature output voltage drift dV Q ----------dT – 0.5 – mV/ K – ∆Vl = 8 V to 32 V IQ = 5 mA fr = 100 Hz; Vr = 0.5 Vpp Reset Timing D and Output RO Reset switching threshold VQ,rt 4.5 4.65 4.8 V – Reset output low voltage VROL – 0.2 0.4 V Reset output leakage current IROH – 0 10 µA Rext ≥ 5 kΩ; VQ > 1 V VROH = 5 V Reset charging current ID,c VDU VDRL trd trr 3.0 5.5 9.0 µA VD = 1 V 1.5 1.8 2.2 V – 0.2 0.4 0.7 V – 10 16 22 ms – 0.5 2 µs CD = 47 nF CD = 47 nF Upper timing threshold Lower timing threshold Reset delay time Reset reaction time 1) Measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V. Data Sheet Version 1.3 7 2001-04-24 TLE 4275 II I CI 1 CI 2 1000 µF 100 nF 1 5 IQ Q CQ 22 µF R ext 5 kΩ D VI ID, d ID, c VD CD 4 3 GND 2 RO IRO VQ VRO IGND 47 nF AES02472 Figure 3 Test Circuit VΙ t < t rr VQ V Q, rt d V Ι D,c = dt CD VD t V DU V DRL VRO t rr t rd t t Power-on-Reset Figure 4 Thermal Shutdown Voltage Dip at Input Undervoltage Secondary Spike Overload at Output AED03010 Reset Timing Data Sheet Version 1.3 8 2001-04-24 TLE 4275 Output Voltage VQ versus Temperature Tj VQ Output Voltage VQ versus Input Voltage VI AED03029 5.2 V AED01929 12 VQ V 10 5.1 VI = 13.5 V 5.0 8 4.9 6 4.8 4 4.7 2 4.6 -40 0 40 80 0 120 ˚C 160 R L = 25 Ω 0 2 4 6 Tj Output Current IQ versus Temperature Tj IQ Output Current IQ versus Input Voltage VI AED03034 1200 mA 8 V 10 VΙ AED03030 1.2 IQ A 1000 1.0 800 0.8 T j = 125 ˚C 25 ˚C 600 0.6 400 0.4 200 0.2 0 -40 0 40 80 0 120 ˚C 160 Tj Data Sheet Version 1.3 0 10 20 30 40 V 50 VI 9 2001-04-24 TLE 4275 Current Consumption Iq versus Output Current IQ Drop Voltage Vdr versus Output Current IQ AED03084 3 Ι q mA Vdr AED03031 800 mV 700 600 2 500 T j = 125 ˚C 25 ˚C 400 VΙ = 13.5 V 300 1 200 100 0 0 20 40 60 80 0 mA 120 0 200 400 600 ΙQ 1000 IQ Current Consumption Iq versus Output Current IQ Ιq mA Charge Current ID,c versus Temperature Tj AED03085 80 mA 70 8 µA I D, c 7 60 6 50 5 40 4 30 3 AED03086 I D, c VΙ = 13.5 V 20 2 10 1 0 0 100 200 300 400 0 -40 mA 600 0 40 80 120 ˚C 160 Tj ΙQ Data Sheet Version 1.3 VI = 13.5 V VD = 1 V 10 2001-04-24 TLE 4275 Delay Switching Threshold VDU, VDRL versus Temperature Tj AED03083 4.0 V V DU V DRL 3.5 3.0 2.5 VΙ = 13.5 V 2.0 V DU 1.5 1.0 0.5 V DRL 0 -40 0 40 80 120 ˚C 160 Tj Data Sheet Version 1.3 11 2001-04-24 TLE 4275 Package Outlines P-TO252-5-1 (D-PAK) (Plastic Transistor Single Outline) 2.3 +0.05 -0.10 A 1 ±0.1 0...0.15 0.5 +0.08 -0.04 5x0.6 ±0.1 1.14 4.56 0.9 +0.08 -0.04 0.51 min 0.15 max per side B 5.4 ±0.1 0.8 ±0.15 (4.17) 9.9 ±0.5 6.22 -0.2 1 ±0.1 6.5 +0.15 -0.10 0.1 0.25 M A B GPT09161 All metal surfaces tin plated, except area of cut. Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Data Sheet Version 1.3 12 Dimensions in mm 2001-04-24 TLE 4275 P-TO263-5-1 (SMD) (Plastic Transistor Single Outline) 10 ±0.2 4.4 9.8 ±0.15 1.27 ±0.1 B 0.1 0.05 2.4 2.7 ±0.3 4.7 ±0.5 7.55 1) (15) 9.25 ±0.2 1±0.3 A 8.5 1) 0...0.15 5x0.8 ±0.1 0.5 ±0.1 4x1.7 1) M A B Typical All metal surfaces tin plated, except area of cut. Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Data Sheet Version 1.3 13 0.1 GPT09113_malac 8˚ max. 0.25 Dimensions in mm 2001-04-24 TLE 4275 P-TO220-5-11 (Plastic Transistor Single Outline) 10 ±0.2 A 9.8 ±0.15 8.5 1) 3.7-0.15 4.4 9.25 ±0.2 3.7 ±0.3 C 0.05 10.2 ±0.3 8.6 ±0.3 2.8 ±0.2 12.95 15.65 ±0.3 17±0.3 1) 1.27 ±0.1 0.5 ±0.1 0...0.15 2.4 0.8 ±0.1 1.7 1) 3.9 ±0.4 0.25 M A C 8.4 ±0.4 Typical All metal surfaces tin plated, except area of cut. gpt09064_ma Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Dimensions in mm Data Sheet Version 1.3 14 2001-04-24 TLE 4275 P-TO220-5-12 (Plastic Transistor Single Outline) 10 ±0.2 A 9.8 ±0.15 B 1) 8.5 3.7 -0.15 4.4 C 0...0.15 9.25 ±0.2 0.5 ±0.1 6x 0.8 ±0.1 1.7 1) 0.05 13 ±0.5 11±0.5 2.8 ±0.2 12.95 15.65 ±0.3 17±0.3 1) 1.27 ±0.1 2.4 0.25 M A B C Typical All metal surfaces tin plated, except area of cut. gpt09065_mal Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Dimensions in mm Data Sheet Version 1.3 15 2001-04-24 TLE 4275 Edition 2001-04-24 Published by Infineon Technologies AG i. Gr., St.-Martin-Strasse 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet Version 1.3 16 2001-04-24