BAR 64... Silicon PIN Diode l High voltage current controlled l RF resistor for RF attenuator and swirches l Freqency range above 1 MHz l Low resistance and short carrier lifetime l For frequencies up to 3 GHz Type Marking Ordering code (tape and reel) BAR 64 BAR 64-04 BAR 64-05 BAR 64-06 POs PPs PRs PSs Q62702-A1041 Q62702-A1010 Q62702-A1042 Q62702-A1043 Pin configuration Package 1 2 3 A C SOT-23 A C C/A A A C/C C C A/A 1) Maximum ratings per diode Parameter Symbol Reverse voltage VR IF Ptot 200 V 100 mA 250 250 mW Tj Top Tstg 150 °C -55 +150°C °C -55...+150°C °C Forward current Total Power dissipation TS ≤ 90°C BAR64-04,-05,-06 TS ≤ 65°C Junction temperature Operating temperature range Storage temperature range BAR 64 Unit Thermal resistance Junction-ambient BAR64 BAR64-04,-05,-06 1) Rth JA K/W ≤ 320 ≤ 500 Rth JS Junction-soldering point BAR64 BAR64-04,-05,-06 ≤ 240 ≤ 340 _________________________ 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A01, 23.02.95 BAR 64... Electrical characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Value Unit min. typ. max. 200 - - DC characteristics per diode Breakdown voltage IR = 5 µA Forward voltage IF = 50 mA V(BR) Diode capacitance VR = 20 V, f = 1 MHz Forward resistance IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance CT V VF V - - 1.1 pF - 0.23 0.35 Ω rf -- 12.5 2.1 0.85 20 3.8 1.35 µs τL - Ls Forward current rF= f (TS;TA*) BAR64 * mounted on alumina 1.55 1.4 - nH Forward current rF= f (TS;TA*) per each diode BAR64-05,-05,-06 mA mA TS IF I TA TS Semiconductor Group TS TA F TA TS 2 TA Edition A01, 23.02.95 BAR 64... Permissible pulse load RthJS = f (tp) Permissible pulse load Ifmax/If DC=f(tp) BAR64 BAR64 K/W Permissible pulse load RthJS= f (tp) Permissible pulse load IFmax/IFDC = f (tp) BAR64-04,-05,-06 BAR64-04,-05,-06 K/W Semiconductor Group 3 Edition A01, 23.02.95 BAR 64... Forward current IF=f(VF) Forward resistance rf= f (IF) f = 100 MHz Semiconductor Group Diode capacitance CT= f (VR) f = 1 MHz. 4 Edition A01, 23.02.95