Si3850ADV Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 rDS(on) (Ω) ID (A) 0.300 at VGS = 4.5 V 1.4 0.410 at VGS = 3.0 V 1.2 0.640 at VGS = - 4.5 V - 0.96 0.980 at VGS = - 3.0 V - 0.78 • 100 % Rg Tested RoHS COMPLIANT S2 TSOP-6 Top View G1 1 6 S1 D 2 5 D G2 3 4 S2 G2 D G1 Ordering Information: Si3850ADV-T1-E3 (Lead (Pb)-free) S1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation (Surface Mounted on FR4 Board) ID IDM IS TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range N-Channel 20 P-Channel - 20 ± 12 1.4 1.1 3.5 0.9 - 0.96 - 0.77 - 2.0 - 0.9 Unit V A TJ, Tstg 1.08 0.70 - 55 to 150 °C Symbol N- or P-Channel Unit RthJA 115 °C/W PD W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (Sourface Mounted on FR4 Board, ± ≤ 10 sec) Notes: Maximum under Steady State condition is 150 °C/W. Document Number: 73789 S-60470-Rev. A, 27-Mar-06 www.vishay.com 1 Si3850ADV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VDS = VGS, ID = 250 µA N-Ch 0.6 1.5 VDS = VGS, ID = - 250 µA P-Ch - 0.6 - 1.5 VDS = 0 V, VGS = ± 12 V ± 100 VDS = 20 V, VGS = 0 V N-Ch 1 VDS = - 20 V, VGS = 0 V P-Ch -1 VDS = 20 V, VGS = 0 V, TJ = 70 °C N-Ch 10 VDS = - 20 V, VGS = 0 V, TJ = 70 °C P-Ch VDS = 5 V, VGS = 4.5 V N-Ch 3.0 VDS = - 5 V, VGS = - 4.5 V P-Ch - 1.5 VGS = 4.5 V, ID = 0.5 A N-Ch nA µA - 10 A 0.240 0.300 VGS = - 4.5 V, ID = - 0.5 A P-Ch 0.510 0.640 VGS = 3.0 V, ID = 0.5 A N-Ch 0.325 0.410 VGS = - 3.0 V, ID = - 0.5 A P-Ch 0.780 0.980 VDS = 10 V, ID = 1 A N-Ch 1.8 VDS = - 10 V, ID = - 1 A P-Ch 1.1 IS = 0.9 A, VGS = 0 V N-Ch 0.87 1.2 IS = - 0.8 A, VGS = 0 V P-Ch - 1.0 - 1.3 N-Ch 0.95 1.4 P-Ch 1.10 1.7 N-Ch 0.22 P-Ch 0.28 N-Ch 0.24 P-Ch 0.26 VSD V Ω S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Body Diode Reverse Recovery Tme Body Diode Reverse Recovery Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 1 A Qgs Qgd P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 1 A Rg td(on) tr td(off) tf trr Qrr N-Channel VDD = 10 V, RL = 10 Ω ID ≅ 0.9 A, VGEN = 4.5 V, RG = 1 Ω nC N-Ch 3.5 5.3 P-Ch 10.5 16 N-Ch 8 14 P-Ch 13 20 N-Ch 16 25 P-Ch 34 50 N-Ch 20 30 P-Ch 18 30 N-Ch 9 15 P-Ch 18 30 N-Ch 20 30 IF = - 0.9 A, di/dt = 100 A/µs P-Ch 25 40 IF = 0.9 A, di/dt = 100 A/µs N-Ch 9 15 IF = - 0.9 A, di/dt = 100 A/µs P-Ch 9 15 P-Channel VDD = - 10 V, RL = 10 Ω ID ≅ - 0.9 A, VGEN = - 4.5 V, RG = 1 Ω IF = 0.9 A, di/dt = 100 A/µs Ω ns nC Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73789 S-60470-Rev. A, 27-Mar-06 Si3850ADV Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 3.0 3.5 VGS = 5.0 thru 4 V - 55 °C 3.0 2.4 2.5 I D – Drain Current (A) I D – Drain Current (A) 3V 2.0 2.5 V 1.5 1.0 25 °C 1.8 TC = 125 °C 1.2 0.6 0.5 2V 0.0 0.0 0.0 0.7 1.4 2.1 2.8 0 3.5 1 VDS – Drain-to-Source Voltage (V) 3 4 VGS – Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 110 0.7 0.6 VGS = 2.5 V 0.5 C – Capacitance (pF) r DS(on)– On-Resistance (Ω) 2 VGS = 3 V 0.4 VGS = 4.5 V 0.3 88 Ciss 66 44 Coss 0.2 22 Crss 0.1 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 3.5 4 ID – Drain Current (A) 8 20 Capacitance 1.8 10 ID = 1.2 A ID = 1 A 8 1.6 VDS = 5 V rDS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 16 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current VDS = 10 V 6 VGS = 15 V 4 2 0 0.0 12 VGS = 3 V 1.4 VGS = 4.5 V 1.2 1.0 0.8 0.5 1.0 1.5 Qg – Total Gate Charge (nC) Gate Charge Document Number: 73789 S-60470-Rev. A, 27-Mar-06 2.0 2.5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ – Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si3850ADV Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 1.5 10 r DS(on)– On-Resistance (Ω) I S – Source Current (A) 150 °C 1 25 °C 0.1 0.01 0.001 1.2 0.9 0.6 125 °C 25 °C 0.3 0.0 0.0 0.3 0.6 0.9 1.2 0 1.5 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) VSD – Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.2 30 0.1 - 0.0 Power (W) V GS(th) Variance (V) 24 - 0.1 ID = 5 mA 18 12 - 0.2 - 0.3 - 0.4 - 50 6 ID = 250 µA - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ – Temperature (°C) Time (sec) Threshold Voltage Single Pulse Power 1 10 10 I D – Drain Current (A) *Limited by rDS(on) 1 ms 1 10 ms 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse dc BVDSS Limited 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) * VGS minimum VGS at which rDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 73789 S-60470-Rev. A, 27-Mar-06 Si3850ADV Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: 73789 S-60470-Rev. A, 27-Mar-06 www.vishay.com 5 Si3850ADV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 2.5 2.0 VGS = 5 thru 4 V - 55 °C 1.6 3.5 V I D – Drain Current (A) I D – Drain Current (A) 2.0 1.5 3V 1.0 2.5 V 0.5 25 °C 1.2 TC = 125 °C 0.8 0.4 2V 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 VDS – Drain-to-Source Voltage (V) C – Capacitance (pF) r DS(on)– On-Resistance (Ω) VGS = 2.5 V VGS = 3 V 1.0 VGS = 4.5 V Ciss 88 66 Coss 44 Crss 22 0.5 0 0.5 1.0 1.5 2.0 0 2.5 4 ID – Drain Current (A) 8 16 20 Capacitance 1.8 10 ID = 0.5 A ID = 1 A VDS = 5 V 1.6 8 rDS(on) – On-Resi stance (Normalized) V GS – Gate-to-Source Voltage (V) 12 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current VDS = 10 V 6 VGS = 15 V 4 2 VGS = 3 V 1.4 VGS = 4.5 V 1.2 1.0 0.8 0.5 1.0 1.5 Qg – Total Gate Charge (nC) Gate Charge www.vishay.com 6 5 110 1.5 0 0.0 4 Transfer Characteristics 2.5 0.0 0.0 3 VGS – Gate-to-Source Voltage (V) Output Characteristics 2.0 2 2.0 2.5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ – Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 73789 S-60470-Rev. A, 27-Mar-06 Si3850ADV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 3.0 10 r DS(on)– On-Resistance (Ω) I S – Source Current (A) TJ = 150 °C 1 25 °C 0.1 0.01 0.001 2.4 1.8 125 °C 1.2 25 °C 0.6 0.0 0.0 0.4 0.8 1.2 1.6 0 2.0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) VSD – Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 30 24 ID = 250 µA 0.2 Power (W) V GS(th) Variance (V) 0.3 ID = 5 mA 0.1 18 12 0.0 6 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 TJ – Temperature (°C) Time (sec) Threshold Voltage Single Pulse Power vs. Junction-to-Ambient 10 10 I D – Drain Current (A) *Limited by rDS(on) 1 ms 1 10 ms 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse dc BVDSS Limited 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) * VGS minimum VGS at which rDS(on) is specified Safe Operating Area Document Number: 73789 S-60470-Rev. A, 27-Mar-06 www.vishay.com 7 Si3850ADV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73789. www.vishay.com 8 Document Number: 73789 S-60470-Rev. 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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1