VS-6CWH02FNHM3 Datasheet

VS-6CWH02FNHM3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt®
FEATURES
Base
common
cathode
4
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• AEC-Q101 qualified
2
Common
cathode
1
3
Anode
Anode
TO-252AA (D-PAK)
• Meets JESD 201 class 2 whisker test
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION / APPLICATIONS
PRODUCT SUMMARY
Package
TO-252AA (D-PAK)
IF(AV)
2x3A
VR
200 V
VF at IF
0.9 V
trr typ.
See Recovery table
TJ max.
175 °C
Diode variation
Common cathode
Vishay Semiconductors’ 200 V series are the state of the art
hyperfast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and
hyperfast recovery time. 
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics. 
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as well
as freewheeling diode in low voltage inverters and chopper
motor drives. 
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
VRRM
Average rectified forward current per device
IF(AV)
Non-repetitive peak surge current
IFSM
Peak repetitive forward current per diode
IFM
Operating junction and storage temperatures
TEST CONDITIONS
MAX.
UNITS
200
V
Total device, rated VR, TC = 159 °C
6
50
Rated VR , square wave, 20 kHz, TC = 159 °C
TJ, TStg
A
6
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, 
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
200
-
-
IF = 3 A
-
-
1
IF = 3 A, TJ = 125 °C
-
-
0.9
IR = 100 μA
IF = 6 A
-
-
1.2
IF = 6 A, TJ = 125 °C
-
-
1.08
VR = VR rated
-
-
5
TJ = 125 °C, VR = VR rated
-
-
100
UNITS
V
Reverse leakage current
IR
Junction capacitance
CT
VR = 200 V
-
12
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
-
nH
μA
Revision: 10-Jul-15
Document Number: 94743
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-6CWH02FNHM3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
trr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
20
35
TJ = 25 °C
-
19
-
TJ = 125 °C
Peak recovery current
Reverse recovery charge
IRRM
Qrr
-
26
-
-
3.1
-
-
4.6
-
TJ = 25 °C
-
30
-
TJ = 125 °C
-
60
-
IF = 3 A
VR = 160 V
dIF/dt = 200 A/μs
TJ = 25 °C
TJ = 125 °C
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
-
-
5
Thermal resistance,
junction to ambient per leg
RthJA
-
-
80
Thermal resistance,
case to heatsink
RthCS
-
-
-
-
0.3
-
-
0.01
-
oz.
-
12
(10)
kgf · cm
(lbf · in)
Maximum junction and
storage temperature range
Weight
Mounting torque
Marking device
6.0
(5.0)
Case style TO-252AA (D-PAK)
°C/W
g
6CWH02FNH
Revision: 10-Jul-15
Document Number: 94743
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-6CWH02FNHM3
www.vishay.com
Vishay Semiconductors
100
100
Reverse Current - I R (μA)
10
150˚C
125˚C
1
100˚C
0.1
0.01
25˚C
0.001
0
50
100
150
Reverse Voltage - VR (V)
200
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Tj = 175°C
100
1
Tj = 125°C
Tj = 25°C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T J = 25˚C
Junction Capacitance - C T (pF)
Instantaneous Forward Current - I F (A)
T J = 175˚C
10
10
1.6
1
Forward Voltage Drop - VFM (V)
10
100
1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Thermal Impedance Z thJC (°C/W)
10
D = 0.5
D = 0.2
1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.1
0.01
1E-05
Single Pulse
(Thermal Resistance)
1E-04
1E-03
1E-02
1E-01
1E+00
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 10-Jul-15
Document Number: 94743
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-6CWH02FNHM3
www.vishay.com
Vishay Semiconductors
50
IF = 3 A
IF = 6 A
40
170
DC
160
trr ( nC )
Allowable Case Temperature (°C)
180
150
30
Square wave (D=0.50)
rated Vr applied
140
20
see note (1)
130
0
1
2
3
4
Average Forward Current - IF(AV)(A)
V R= 30V
T J = 125˚C
T J = 25˚C
5
10
100
1000
di F /dt (A/μs )
Fig. 7 - Typical Reverse Recovery vs. dIF/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
140
V R= 30V
T J = 125˚C
T J = 25˚C
120
RMS Limit
4
IF = 6 A
IF = 3 A
100
3
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
2
1
Qrr ( nC )
Average Power Loss ( Watts )
5
80
60
40
DC
20
0
0
1
2
3
4
5
Average Forward Current - IF(AV) (A)
Fig. 6 - Forward Power Loss Characteristics
0
100
1000
di F /dt (A/μs )
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
(1)
Revision: 10-Jul-15
Document Number: 94743
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-6CWH02FNHM3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 10-Jul-15
Document Number: 94743
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-6CWH02FNHM3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
6
C
W
H
02
FN
TRL
H
M3
1
2
3
4
5
6
7
8
9
10
1
-
Vishay Semiconductors product
2
-
Current rating (6 = 6 A)
3
-
Center tap configuration-
4
-
Package identifier:
W = D-PAK
4
5
-
H = hyperfast recovery
6
-
Voltage rating (02 = 200 V)
7
-
FN = TO-252AA
8
-
None = tube (50 pieces)
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
-
H = AEC-Q101 qualified
10
-
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-6CWH02FNHM3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
75
3000
Antistatic plastic tube
VS-6CWH02FNTRHM3
2000
2000
13" diameter reel
VS-6CWH02FNTRRHM3
3000
3000
13" diameter reel
VS-6CWH02FNTRLHM3
3000
3000
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95519
Part marking information
www.vishay.com/doc?95518
Packaging information
www.vishay.com/doc?95033
Revision: 10-Jul-15
Document Number: 94743
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000