MSD39N60 30V N-Channel MOSFETs Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • 30V, 90A, RDS(ON) =2.6mΩ@VGS = 10V • Improved dv/dt capability • Fast switching • 100% EAS Guaranteed • RoHS compliant package Applications • MB / VGA / Vcore • POL Applications • SMPS 2nd SR Packing & Order Information Shipping：80/Tube ; 2,500/Box TO-252 Package Graphic symbol Publication Order Number: [MSD39N60] © Bruckewell Technology Corporation Rev. A -2016 MSD39N60 30V N-Channel MOSFETs MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V Drain Current - Continuous (TC=25°C) 90 A Drain Current - Continuous (TC=100°C) 57 A ID 360 A 180 mJ 2 60 A Power Dissipation (TC=25°C) 100 W Power Dissipation - Derate above 25°C 0.8 W/°C TJ Operating Junction Temperature Range -55 to +150 °C TSTG Storage Temperature Range -55 to +150 °C EAS IAS PD Drain Current - Pulsed 1 2 IDM Single Pulse Avalanche Energy Single Pulse Avalanche Current Thermal Characteristics Symbol Parameter Typ. Max. RΘjA Thermal Resistance Junction to ambient -- 62 RθJC Thermal Resistance Junction to Case -- 1.25 Units °C/W Electrical Characteristics (TJ=25℃, unless otherwise noted) Off Characteristics Symbol Parameter Test Conditions Min Drain-Source Breakdown Voltage VGS = VGS, ID = 250uA BVDSS Temperature Coefficient Reference to 25°C , ID = 1mA IGSS Gate-Source Leakage Current VDS = 0 V , VGS = ±20 V IDSS Drain-Source Leakage Current BVDSS △BVDSS /△TJ On Characteristics Symbol Parameter Max. 30 0.03 V/°C ±100 1 VDS = 24 V , VGS = 0 V , TJ= 125°C 10 Min Units V VDS = 30 V , VGS = 0 V , TJ= 25°C Test Conditions 3 Typ. Typ. Max. VGS = 10 V, ID = 30 A 1.9 2.6 VGS = 4.5 V , ID = 15 A 2.5 3.4 1.6 2.5 nA uA Units mΩ RDS(on) Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS = VGS, ID =-250μA △VGS(th) V GS(th) Temperature Coefficient VDS = VGS, ID =-250μA -5 mV/°C gfs Forward Tranconductance VDS = 10 V , ID = 2 A 16 S Publication Order Number: [MSD39N60] 1.2 V © Bruckewell Technology Corporation Rev. A -2016 MSD39N60 30V N-Channel MOSFETs Dynamic Characteristics Symbol Parameter Qg Test Conditions Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time Max. Units -- 40 75 nC -- 6 12 nC -- 19 35 nC -- 20 40 ns ID = 1 A , RG = 1 Ω, -- 32 60 ns VGS = 10 V , VDD = 15 V -- 75 130 ns -- 28 55 ns -- 4800 8000 pF -- 735 1300 pF -- 420 800 pF -- 1.6 3.5 Ω Min Typ. Max. Units -- -- 90 A -- -- 180 A VGS = 0 V , IS = 1 A , TJ = 25°C -- -- 1 V VDS = 15 V , ID = 24 A, 3,4 VGS = 4.5 V 3,4 3,4 3,4 3,4 3,4 tf Fall Time CISS Input Capacitance VDS = 25 V COSS Output Capacitance CRSS Reverse Transfer Capacitance Rg Gate Charge f = 1 MHz , VGS = 0 V VDS = 0 V , f = 1 MHz , VGS = 0 V Drain-Source Diode Characteristics Symbol Parameter ISM Typ. Total Gate Charge Qgs IS Min 3,4 Continuous Source Current Pulsed Source Current 3 3 Test Conditions VG = VD = 0 V , Force Current VSD Diode Forward Voltage Trr Reverse Recovery Time VDS = 0 V,IS = 1 A , -- 49 85 ns Qrr Reverse Recovery Charge di/dt=100A/μs , TJ = 25°C -- 18 35 nC Note : 1.Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=60A.,RG=25 ,Starting TJ=25℃. 3.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4.Essentially independent of operating temperature. Publication Order Number: [MSD39N60] © Bruckewell Technology Corporation Rev. A -2016 MSD39N60 30V N-Channel MOSFETs ■Characteristics Curve FIG.1-CONTINUOUS DRAIN CURRENT VS. TC FIG.2-NORMALIZED RDSON VS. TJ FIG.3-NORMALIZED VTH VS. TJ FIG.4-GATE CHARGE WAVEFORM FIG.5-NORMALIZED TRANSIENT IMPEDANCE FIG.6-MAXIMUM SAFE OPERATION AREA Publication Order Number: [MSD39N60] © Bruckewell Technology Corporation Rev. A -2016 MSD39N60 30V N-Channel MOSFETs ■Characteristics Curve FIG.7-SWITCHING TIME WAVEFORM Publication Order Number: [MSD39N60] FIG.8-EAS WAVEFORM © Bruckewell Technology Corporation Rev. A -2016 MSD39N60 30V N-Channel MOSFETs Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSD39N60] © Bruckewell Technology Corporation Rev. A -2016