MSC39N02X 30V N-Channel MOSFETs Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • 30V,130A, RDS(ON) =1.6mΩ@VGS = 10V • Improved dv/dt capability • Fast switching • Green Device Available • RoHS compliant package Applications • MB / VGA / Server Vcore • POL Applications • SMPS 2nd SR • BMS System PPAK5X6 Pin Configuration Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V Drain Current - Continuous (TC=25°C) (Chip Limitation) 130 A Drain Current - Continuous (TC=100°C) (Chip Limitation) 82 A 520 A 245 mJ ID IDM EAS Drain Current - Pulsed 1 2 Single Pulse Avalanche Energy Publication Order Number: [MSC39N02X] © Bruckewell Technology Corporation Rev. A -2016 MSC39N02X 30V N-Channel MOSFETs Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Value Unit 70 A Power Dissipation (TC=25°C) 166 W Power Dissipation - Derate above 25°C 1.33 W/°C TJ Operating Junction Temperature Range -55 to +175 °C TSTG Storage Temperature Range -55 to +175 °C IAS PD Single Pulse Avalanched Current 2 Thermal Characteristics Symbol Parameter Typ. Max. RΘjA Thermal Resistance Junction to ambient -- 62 RθJC Thermal Resistance Junction to Case -- 0.9 Units °C/W Electrical Characteristics (TJ=25℃, unless otherwise noted) Static State Characteristics Symbol Parameter Test Conditions Min BVDSS Drain-Source Breakdown Voltage VGS = VGS, ID = 250uA IGSS Gate-Source Leakage Current VDS = 0 V , VGS = ±20 V IDSS Drain-Source Leakage Current RDS(on) Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS = VGS, ID =-250μA gfs Forward Tranconductance VDS = 10 V , ID = 15 A Dynamic Characteristics Symbol Parameter Qg 1 VDS = 24 V , VGS = 0 V , TJ= 125°C 10 VGS = 10 V, ID = 30 A 1.2 1.6 VGS = 4.5 V , ID = 15 A 1.8 2.4 1.6 2.5 30 Qgd Gate-Drain Charge 3,4 CISS Input Capacitance Output Capacitance CRSS Reverse Transfer Capacitance Rg Total Gate Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Publication Order Number: [MSC39N02X] S -- 65 120 nC -- 16 30 nC -- 21 40 nC -- 7720 11000 pF -- 945 1400 pF -- 435 650 pF -- 1.2 2.4 Ω -- 24.6 48 ns ID = 10 A , RG = 10 Ω, -- 62.8 120 ns VGS = 10 V , VDD = 20 V -- 224 440 ns -- 162 320 ns VDS = 15 V , ID = 10 A, VGS = 4.5 V 3,4 3,4 V Units VDS = 0 V , f = 1 MHz , VGS = 0 V 3,4 mΩ Max. f = 1 MHz , VGS = 0 V 3,4 uA Typ. VDS = 25 V COSS nA Min Total Gate Charge 3,4 ±100 1 Units V VDS = 27 V , VGS = 0 V , TJ= 25°C Test Conditions Gate-Source Charge Max. 30 3,4 Qgs Typ. © Bruckewell Technology Corporation Rev. A -2016 MSC39N02X 30V N-Channel MOSFETs Static State Characteristics Symbol Parameter EAS Test Conditions Single Pulse Avalanche Energy Min VDD=25V, L=0.1mH, IAS=30A Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Test Conditions IS Continuous Source Current 3 ISM Pulsed Source Current VSD Diode Forward Voltage 3 VG = VD = 0 V , Force Current VGS = 0 V , IS = 1 A , TJ = 25°C Typ. Max. 45 Units mJ Min Typ. Max. Units -- -- 130 A -- -- 260 A -- -- 1 V Note : 1.Repetitive Rating : Pulsed width limited by maximum junction temperature. 2.VDD=25V,VGS=10V,L=1mH,IAS=70A.,RG=25Ω,Starting TJ=25℃. 3.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4.Essentially independent of operating temperature. Publication Order Number: [MSC39N02X] © Bruckewell Technology Corporation Rev. A -2016 MSC39N02X 30V N-Channel MOSFETs ■Characteristics Curve FIG.1-CONTINUOUS DRAIN CURRENT VS. TC FIG.2-NORMALIZED RDSON VS. TJ FIG.3-NORMALIZED VTH VS. TJ FIG.4-GATE CHARGE WAVEFORM FIG.5-NORMALIZED TRANSIENT IMPEDANCE FIG.6-MAXIMUM SAFE OPERATION AREA Publication Order Number: [MSC39N02X] © Bruckewell Technology Corporation Rev. A -2016 MSC39N02X 30V N-Channel MOSFETs ■Characteristics Curve FIG.7-SWITCHING TIME WAVEFORM Publication Order Number: [MSC39N02X] FIG.8-EAS WAVEFORM © Bruckewell Technology Corporation Rev. A -2016 MSC39N02X 30V N-Channel MOSFETs Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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