MSD36N12

MSD36N12
30V N-Channel MOSFETs
Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
• 30V, 23A, RDS(ON) =30mΩ@VGS = 4.5V
• Improved dv/dt capability
• Fast switching
• Green Device Available
• RoHS compliant package
Applications
• Notebook
• Load Switch
• LED applications
Packing & Order Information
80/Tube ; 2,500/Box
TO-252 Package
Graphic symbol
Publication Order Number: [MSD36N12]
© Bruckewell Technology Corporation Rev. A -2016
MSD36N12
30V N-Channel MOSFETs
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±12
V
Drain Current - Continuous (TC=25°C)
23
A
Drain Current - Continuous (TC=100°C)
14.5
A
92
A
Power Dissipation (TC=25°C)
25
W
Power Dissipation - Derate above 25°C
0.2
W/°C
TJ
Operating Junction Temperature Range
-55 to +150
°C
TSTG
Storage Temperature Range
-55 to +150
°C
ID
IDM
PD
Drain Current - Pulsed
1
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
RΘjA
Thermal Resistance Junction to ambient
--
5
RθJC
Thermal Resistance Junction to Case
--
62
Units
°C/W
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Off Characteristics
Symbol
Parameter
Test Conditions
Min
Drain-Source Breakdown Voltage
VGS = VGS, ID = 250uA
BVDSS Temperature Coefficient
Reference to 25°C , ID = 1mA
IGSS
Gate-Source Leakage Current
VDS = 0 V , VGS = ±12 V
IDSS
Drain-Source Leakage Current
BVDSS
△BVDSS
/△TJ
On Characteristics
Symbol
Parameter
Typ.
Max.
30
V
0.06
V/°C
±100
VDS = 30 V , VGS = 0 V , TJ= 25°C
1
VDS = 24 V , VGS = 0 V , TJ= 125°C
10
Test Conditions
Min
Units
Typ.
Max.
VGS = 4.5 V, ID = 8 A
25
30
VGS = 2.5 V , ID = 4 A
32
40
0.6
0.9
nA
uA
Units
mΩ
RDS(on)
Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID =-250μA
△VGS(th)
V GS(th) Temperature Coefficient
VDS = VGS, ID =-250μA
-3
mV/°C
gfs
Forward Tranconductance
VDS = 10 V , IS = 3 A
7
S
Publication Order Number: [MSD36N12]
0.4
V
© Bruckewell Technology Corporation Rev. A -2016
MSD36N12
30V N-Channel MOSFETs
Dynamic and switching Characteristics
Symbol
Parameter
Qg
Test Conditions
Min
Typ.
Max.
Units
--
8.4
12
nC
--
1
2
nC
--
2.2
4
nC
--
4.5
9
ns
ID = 1 A , RG = 25 Ω,
--
13
25
ns
VGS = 4.5 V , VDD = 10 V
--
27
51
ns
--
8.3
16
ns
--
695
1000
pF
--
45
65
pF
--
36
50
pF
--
1.5
3
Ω
Min
Typ.
Max.
Units
--
--
23
A
--
--
46
A
--
--
1
V
2,3
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
2,3
2,3
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
CISS
Input Capacitance
VGS = 4.5 V
2,3
2,3
tr
VDS = 10 V , ID = 4 A,
2,3
2,3
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Rg
Total Gate Charge
VDS = 10 V
f = 1 MHz , VGS = 0 V
VDS = 0 V , f = 1 MHz , VGS = 0 V
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
VG = VD = 0 V , Force Current
VGS = 0 V , IS = 1 A , TJ = 25°C
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3. Essentially independent of operating temperature.
Publication Order Number: [MSD36N12]
© Bruckewell Technology Corporation Rev. A -2016
MSD36N12
30V N-Channel MOSFETs
■Characteristics Curve
FIG.1-CONTINUOUS DRAIN CURRENT
VS. TC
FIG.2-NORMALIZED RDSON VS. TJ
FIG.3-NORMALIZED VTH VS. TJ
FIG.4-GATE CHARGE WAVEFORM
FIG.5-NORMALIZED TRANSIENT IMPEDANCE
FIG.6-MAXIMUM SAFE OPERATION AREA
Publication Order Number: [MSD36N12]
© Bruckewell Technology Corporation Rev. A -2016
MSD36N12
30V N-Channel MOSFETs
■Characteristics Curve
FIG.7-SWITCHING TIME WAVEFORM
Publication Order Number: [MSD36N12]
FIG.8-EAS WAVEFORM
© Bruckewell Technology Corporation Rev. A -2016
MSD36N12
30V N-Channel MOSFETs
Disclaimer
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WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
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generic applications.
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application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSD36N12]
© Bruckewell Technology Corporation Rev. A -2016