MSC49N02X 40V N-Channel MOSFETs Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • 40V,140A, RDS(ON) =2.2mΩ@VGS = 10V • Improved dv/dt capability • Fast switching • Green Device Available • RoHS compliant package Applications • PowerTools • Load Switch • LED applications • Motor Drive Applications PPAK5X6 Pin Configuration Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V Drain Current - Continuous (TC=25°C) (Chip Limitation) 140 A Drain Current - Continuous (TC=100°C) (Chip Limitation) 88 A 560 A 360 mJ ID IDM EAS Drain Current - Pulsed 1 2 Single Pulse Avalanche Energy Publication Order Number: [MSC49N02X] © Bruckewell Technology Corporation Rev. A -2016 MSC49N02X 40V N-Channel MOSFETs Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Value Unit 85 A Power Dissipation (TC=25°C) 142 W Power Dissipation - Derate above 25°C 1.14 W/°C TJ Operating Junction Temperature Range -55 to +150 °C TSTG Storage Temperature Range -55 to +150 °C IAS PD Single Pulse Avalanched Current 2 Thermal Characteristics Symbol Parameter Typ. Max. RΘjA Thermal Resistance Junction to ambient -- 62 RθJC Thermal Resistance Junction to Case -- 0.88 Units °C/W Electrical Characteristics (TJ=25℃, unless otherwise noted) Off Characteristics Symbol Parameter Test Conditions Min BVDSS Drain-Source Breakdown Voltage VGS = VGS, ID = 250uA IGSS Gate-Source Leakage Current VDS = 0 V , VGS = ±20 V IDSS Drain-Source Leakage Current On Characteristics Symbol Parameter ±100 1 VDS = 32 V , VGS = 0 V , TJ= 125°C 10 Typ. Max. VGS = 10 V, ID = 30 A 1.7 2.2 VGS = 4.5 V , ID = 20 A 2.1 3 1.6 2.5 Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS = VGS, ID =-250μA gfs Forward Tranconductance VDS = 10 V , IS = 10 A Min 1.2 45 Test Conditions 3,4 Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge CISS Input Capacitance 3,4 3,4 COSS Output Capacitance CRSS Reverse Transfer Capacitance Rg Total Gate Charge Publication Order Number: [MSC49N02X] VDS = 20 V , ID = 10 A, VGS = 4.5 V VDS = 25 V f = 1 MHz , VGS = 0 V VDS = 0 V , f = 1 MHz , VGS = 0 V Units V VDS = 40 V , VGS = 0 V , TJ= 25°C RDS(on) Qg Max. 40 Test Conditions Dynamic and switching Characteristics Symbol Parameter Typ. nA uA Units mΩ V S Min Typ. Max. Units -- 70 140 nC -- 15 32 nC -- 40 80 nC -- 8000 12000 pF -- 550 1000 pF -- 420 800 pF -- 1.2 2.4 Ω © Bruckewell Technology Corporation Rev. A -2016 MSC49N02X 40V N-Channel MOSFETs Dynamic and switching Characteristics Symbol Parameter td(on) Turn-On Delay Time Rise Time td(off) Turn-Off Delay Time tf Fall Time Min Typ. Max. Units -- 24.6 48 ns ID = 10 A , RG = 10 Ω, -- 62.8 120 ns VGS = 10 V , VDD = 20 V -- 224 440 ns -- 162 320 ns Min Typ. Max. Units -- -- 140 A -- -- 280 A 3,4 3,4 tr Test Conditions 3,4 3,4 Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Test Conditions IS Continuous Source Current VG = VD = 0 V , Force Current ISM Pulsed Source Current VSD Diode Forward Voltage VGS = 0 V , IS = 1 A , TJ = 25°C -- -- 1 V trr Reverse Recovery Time VGS = 0 V , IS = 1 A , -- 32 -- ns Qrr Reverse Recovery Charge di/dt=100A/μs , TJ=25°C -- 19 -- nC Note : 1.Repetitive Rating : Pulsed width limited by maximum junction temperature. 2.VDD=25V,VGS=10V,L=1mH,IAS=8A.,RG=25Ω,Starting TJ=25℃. 3.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4.Essentially independent of operating temperature. Publication Order Number: [MSC49N02X] © Bruckewell Technology Corporation Rev. A -2016 MSC49N02X 40V N-Channel MOSFETs ■Characteristics Curve FIG.1-CONTINUOUS DRAIN CURRENT VS. TC FIG.2-NORMALIZED RDSON VS. TJ FIG.3-NORMALIZED VTH VS. TJ FIG.4-GATE CHARGE WAVEFORM FIG.5-NORMALIZED TRANSIENT IMPEDANCE FIG.6-MAXIMUM SAFE OPERATION AREA Publication Order Number: [MSC49N02X] © Bruckewell Technology Corporation Rev. A -2016 MSC49N02X 40V N-Channel MOSFETs ■Characteristics Curve FIG.7-SWITCHING TIME WAVEFORM Publication Order Number: [MSC49N02X] FIG.8-EAS WAVEFORM © Bruckewell Technology Corporation Rev. A -2016 MSC49N02X 40V N-Channel MOSFETs Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSC49N02X] © Bruckewell Technology Corporation Rev. A -2016