MSC49N02X

MSC49N02X
40V N-Channel MOSFETs
Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
• 40V,140A, RDS(ON) =2.2mΩ@VGS = 10V
• Improved dv/dt capability
• Fast switching
• Green Device Available
• RoHS compliant package
Applications
• PowerTools
• Load Switch
• LED applications
• Motor Drive Applications
PPAK5X6 Pin Configuration
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
Drain Current - Continuous (TC=25°C) (Chip Limitation)
140
A
Drain Current - Continuous (TC=100°C) (Chip Limitation)
88
A
560
A
360
mJ
ID
IDM
EAS
Drain Current - Pulsed
1
2
Single Pulse Avalanche Energy
Publication Order Number: [MSC49N02X]
© Bruckewell Technology Corporation Rev. A -2016
MSC49N02X
40V N-Channel MOSFETs
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
85
A
Power Dissipation (TC=25°C)
142
W
Power Dissipation - Derate above 25°C
1.14
W/°C
TJ
Operating Junction Temperature Range
-55 to +150
°C
TSTG
Storage Temperature Range
-55 to +150
°C
IAS
PD
Single Pulse Avalanched Current
2
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
RΘjA
Thermal Resistance Junction to ambient
--
62
RθJC
Thermal Resistance Junction to Case
--
0.88
Units
°C/W
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Off Characteristics
Symbol
Parameter
Test Conditions
Min
BVDSS
Drain-Source Breakdown Voltage
VGS = VGS, ID = 250uA
IGSS
Gate-Source Leakage Current
VDS = 0 V , VGS = ±20 V
IDSS
Drain-Source Leakage Current
On Characteristics
Symbol
Parameter
±100
1
VDS = 32 V , VGS = 0 V , TJ= 125°C
10
Typ.
Max.
VGS = 10 V, ID = 30 A
1.7
2.2
VGS = 4.5 V , ID = 20 A
2.1
3
1.6
2.5
Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID =-250μA
gfs
Forward Tranconductance
VDS = 10 V , IS = 10 A
Min
1.2
45
Test Conditions
3,4
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
CISS
Input Capacitance
3,4
3,4
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Rg
Total Gate Charge
Publication Order Number: [MSC49N02X]
VDS = 20 V , ID = 10 A,
VGS = 4.5 V
VDS = 25 V
f = 1 MHz , VGS = 0 V
VDS = 0 V , f = 1 MHz , VGS = 0 V
Units
V
VDS = 40 V , VGS = 0 V , TJ= 25°C
RDS(on)
Qg
Max.
40
Test Conditions
Dynamic and switching Characteristics
Symbol
Parameter
Typ.
nA
uA
Units
mΩ
V
S
Min
Typ.
Max.
Units
--
70
140
nC
--
15
32
nC
--
40
80
nC
--
8000
12000
pF
--
550
1000
pF
--
420
800
pF
--
1.2
2.4
Ω
© Bruckewell Technology Corporation Rev. A -2016
MSC49N02X
40V N-Channel MOSFETs
Dynamic and switching Characteristics
Symbol
Parameter
td(on)
Turn-On Delay Time
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Min
Typ.
Max.
Units
--
24.6
48
ns
ID = 10 A , RG = 10 Ω,
--
62.8
120
ns
VGS = 10 V , VDD = 20 V
--
224
440
ns
--
162
320
ns
Min
Typ.
Max.
Units
--
--
140
A
--
--
280
A
3,4
3,4
tr
Test Conditions
3,4
3,4
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
VG = VD = 0 V , Force Current
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
VGS = 0 V , IS = 1 A , TJ = 25°C
--
--
1
V
trr
Reverse Recovery Time
VGS = 0 V , IS = 1 A ,
--
32
--
ns
Qrr
Reverse Recovery Charge
di/dt=100A/μs , TJ=25°C
--
19
--
nC
Note :
1.Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.VDD=25V,VGS=10V,L=1mH,IAS=8A.,RG=25Ω,Starting TJ=25℃.
3.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.Essentially independent of operating temperature.
Publication Order Number: [MSC49N02X]
© Bruckewell Technology Corporation Rev. A -2016
MSC49N02X
40V N-Channel MOSFETs
■Characteristics Curve
FIG.1-CONTINUOUS DRAIN CURRENT
VS. TC
FIG.2-NORMALIZED RDSON VS. TJ
FIG.3-NORMALIZED VTH VS. TJ
FIG.4-GATE CHARGE WAVEFORM
FIG.5-NORMALIZED TRANSIENT IMPEDANCE
FIG.6-MAXIMUM SAFE OPERATION AREA
Publication Order Number: [MSC49N02X]
© Bruckewell Technology Corporation Rev. A -2016
MSC49N02X
40V N-Channel MOSFETs
■Characteristics Curve
FIG.7-SWITCHING TIME WAVEFORM
Publication Order Number: [MSC49N02X]
FIG.8-EAS WAVEFORM
© Bruckewell Technology Corporation Rev. A -2016
MSC49N02X
40V N-Channel MOSFETs
Disclaimer
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may vary over time.
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purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSC49N02X]
© Bruckewell Technology Corporation Rev. A -2016