MSC09N74X

MSC09N74X
100V N-Channel MOSFETs
Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
• 100V, 70A , RDS(ON) =6.5mΩ @VGS = 10V
• Improved dv/dt capability
• Fast switching
• 100% EAS Guaranteed
• Green Device Available
• RoHS compliant package
Applications
• Networking
• Load Switch
• LED applications
• Quick Charger
Packing & Order Information
Shipping:3,000/Reel
PPAK5X6 Pin Configuration
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20/-12
V
Drain Current - Continuous (TC=25°C)
70
A
Drain Current - Continuous (TC=100°C)
44
A
280
A
ID
IDM
Drain Current - Pulsed
Publication Order Number: [MSC09N74X]
1
© Bruckewell Technology Corporation Rev. A -2014
MSC09N74X
100V N-Channel MOSFETs
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
320
mJ
80
A
Power Dissipation (TC=25°C)
142
W
Power Dissipation - Derate above 25°C
1.14
W/°C
TJ
Operating Junction Temperature Range
-55 to +150
°C
TSTG
Storage Temperature Range
-55 to +150
°C
EAS
IAS
PD
2
Single Pulse Avalanche Energy
Single Pulse Avalanched Current
2
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
RΘjA
Thermal Resistance Junction to ambient
--
62
RθJC
Thermal Resistance Junction to Case
--
0.88
Units
°C/W
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Off Characteristics
Symbol
Parameter
Test Conditions
Min
100
BVDSS
Drain-Source Breakdown Voltage
VGS = VGS, ID = 250uA
IGSS
Gate-Source Leakage Current
VDS = 0 V , VGS = 20 V
IDSS
Drain-Source Leakage Current
On Characteristics
Symbol
Parameter
1
VDS = 80 V , VGS = 0 V , TJ= 85°C
10
Typ.
Max.
VGS = 10 V, ID = 20 A
5.5
6.5
VGS = 5 V , ID = 10 A
7
9
1.8
2.5
Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
gfs
Forward Tranconductance
VDS = 10 V , ID = 5 A
Qgd
Gate-Drain Charge
3,4
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
3,4
3,4
3,4
Publication Order Number: [MSC09N74X]
Units
mΩ
V
S
Max.
Units
--
58.2
100
nC
--
9.2
18
nC
--
20.8
30
nC
--
24
48
ns
ID = 1 A , RG = 6 Ω,
--
19.8
39
ns
VGS = 10 V , VDD = 15 V
--
46
92
ns
--
26
52
ns
VDS = 80 V , ID = 10 A,
VGS = 10 V
3,4
3,4
8
uA
Typ.
Total Gate Charge
Gate-Source Charge
1.2
nA
Min
3,4
Qgs
tf
Test Conditions
Min
Units
V
VDS = 100 V , VGS = 0 V , TJ= 25°C
RDS(on)
Qg
Max.
100
Test Conditions
Dynamic and switching Characteristics
Symbol
Parameter
Typ.
© Bruckewell Technology Corporation Rev. A -2014
MSC09N74X
100V N-Channel MOSFETs
Dynamic and switching Characteristics
Symbol
Parameter
CISS
Test Conditions
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Rg
Total Gate Charge
VDS = 25 V
f = 1 MHz , VGS = 0 V
VDS = 0 V , f = 1 MHz , VGS = 0 V
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
VG = VD = 0 V , Force Current
VGS = 0 V , IS = 1 A , TJ = 25°C
Min
Typ.
Max.
Units
--
3110
7500
pF
--
1705
4200
pF
--
178
220
pF
--
2
4
Ω
Min
Typ.
Max.
Units
--
--
70
A
--
--
140
A
--
--
1
V
Note :
1.Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.VDD=25V,VGS=10V,L=1mH,IAS=80A.,RG=25Ω,Starting TJ=25℃.
3.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.Essentially independent of operating temperature.
Publication Order Number: [MSC09N74X]
© Bruckewell Technology Corporation Rev. A -2014
MSC09N74X
100V N-Channel MOSFETs
■Characteristics Curve
FIG.1-CONTINUOUS DRAIN CURRENT
VS. TC
FIG.2-NORMALIZED RDSON VS. TJ
FIG.3-NORMALIZED VTH VS. TJ
FIG.4-GATE CHARGE WAVEFORM
FIG.5-NORMALIZED TRANSIENT IMPEDANCE
FIG.6-MAXIMUM SAFE OPERATION AREA
Publication Order Number: [MSC09N74X]
© Bruckewell Technology Corporation Rev. A -2014
MSC09N74X
100V N-Channel MOSFETs
■Characteristics Curve
FIG.7-SWITCHING TIME WAVEFORM
Publication Order Number: [MSC09N74X]
FIG.8-EAS WAVEFORM
© Bruckewell Technology Corporation Rev. A -2014
MSC09N74X
100V N-Channel MOSFETs
Disclaimer
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generic applications.
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application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSC09N74X]
© Bruckewell Technology Corporation Rev. A -2014