MSD30N94 30V N-Channel MOSFETs Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • 30V, 90A, RDS(ON) =4mΩ@VGS = 10V • Improved dv/dt capability • Fast switching • 100% EAS Guaranteed • Green Device Available • RoHS compliant package Applications • MB / VGA / Vcore • POL Applications • SMPS 2nd SR TO-252 Package Graphic symbol Publication Order Number: [MSD30N94] © Bruckewell Technology Corporation Rev. A -2014 MSD30N94 30V N-Channel MOSFETs MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V Drain Current - Continuous (TC=25°C) 90 A Drain Current - Continuous (TC=100°C) 57 A ID IDM EAS IAS PD Drain Current - Pulsed 1 360 A 2 125 mJ 2 50 A 88 W 0.59 W/°C Single Pulse Avalanche Energy Single Pulse Avalanche Current Power Dissipation (TC=25°C) Power Dissipation - Derate above 25°C TJ Storage Temperature Range -55 to +175 °C TSTG Operating Junction Temperature Range -55 to +175 °C Thermal Characteristics Symbol Parameter Typ. Max. RθJc Thermal Resistance Junction to ambient -- 62 RθJA Thermal Resistance Junction to Case -- 1.7 Units °C/W Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Static State Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units Drain-Source Breakdown Voltage VGS = VGS, ID = 250uA BVDSS Temperature Coefficient Reference to 25°C , ID = 1mA IGSS Gate-Source Leakage Current VDS = 0 V , VGS = ±20 V IDSS Drain-Source Leakage Current RDS(on) Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS = VGS, ID =-250μA △VGS(th) V GS(th) Temperature Coefficient VDS = VGS, ID =-250μA -5 mV/°C gfs Forward Tranconductance VDS = 10 V , ID = 10 A 15.5 S BVDSS △BVDSS /△TJ 3 30 V/°C VDS = 30 V , VGS = 0 V , TJ= 25°C 1 VDS = 24 V , VGS = 0 V , TJ= 125°C 10 VGS = 10 V, ID = 24 A 3.1 4 VGS = 4.5 V , ID = 12 A 4.5 6 1.6 2.5 1.2 Test Conditions EAS VDD = 25 V , L = 0.1Mh , IAS = 24 A Publication Order Number: [MSD30N94] 0.03 ±100 Guaranteed Avalanche Energy Symbol Parameter Single Pulse Avalanche Energy V nA uA mΩ V Min Typ. Max. Units 31 -- -- mJ © Bruckewell Technology Corporation Rev. A -2014 MSD30N94 30V N-Channel MOSFETs Dynamic and switching Characteristics Symbol Parameter Qg Test Conditions Min Typ. Max. Units -- 24 36 nC -- 4.2 8 nC -- 13 20 nC -- 12.6 24 ns ID = 15 A , RG = 3.3 Ω, -- 19.5 37 ns VGS = 10 V , VDD = 15 V -- 42.8 81 ns -- 13.2 25 ns -- 2200 3300 pF -- 280 410 pF -- 177 260 pF -- 2 4 Ω Min Typ. Max. Units -- -- 90 A -- -- 360 A -- -- 1 V 3,4 Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time 3,4 3,4 Rise Time td(off) Turn-Off Delay Time tf Fall Time CISS Input Capacitance VGS = 4.5 V 3,4 3,4 tr VDS = 15 V , ID = 24 A, 3,4 3,4 COSS Output Capacitance CRSS Reverse Transfer Capacitance Rg Total Gate Charge VDS = 15 V f = 1 MHz , VGS = 0 V VDS = 0 V , f = 1 MHz , VGS = 0 V Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Test Conditions IS Continuous Source Current VG = VD = 0 V , Force Current ISM Pulsed Source Current VSD Diode Forward Voltage VGS = 0 V , IS = 1 A , TJ = 25°C trr Reverse Recovery Time VDS = 3 0V, IS = 1 A , ns Qrr Reverse Recovery Charge di/dt=100A/μs , TJ=25°C nC Note : 1.Repetitive Rating : Pulsed width limited by maximum junction temperature. 2.VDD=25V,VGS=10V,L=0.1mH,IAS=50A.,RG=25Ω,Starting TJ=25℃. 3.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4.Essentially independent of operating temperature. Publication Order Number: [MSD30N94] © Bruckewell Technology Corporation Rev. A -2014 MSD30N94 30V N-Channel MOSFETs ■Characteristics Curve FIG.1-CONTINUOUS DRAIN CURRENT VS. TC FIG.2-NORMALIZED RDSON VS. TJ FIG.3-NORMALIZED VTH VS. TJ FIG.4-GATE CHARGE WAVEFORM FIG.5-NORMALIZED TRANSIENT IMPEDANCE FIG.6-MAXIMUM SAFE OPERATION AREA Publication Order Number: [MSD30N94] © Bruckewell Technology Corporation Rev. A -2014 MSD30N94 30V N-Channel MOSFETs ■Characteristics Curve FIG.7-SWITCHING TIME WAVEFORM Publication Order Number: [MSD30N94] FIG.8-EAS WAVEFORM © Bruckewell Technology Corporation Rev. A -2014 MSD30N94 30V N-Channel MOSFETs Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSD30N94] © Bruckewell Technology Corporation Rev. A -2014