MSF8N80

MSF8N80
800V N-Channel MOSFET
Description
The MSF8N80 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• RDS(on) (typ 1.3 Ω )@VGS=10V
• Gate Charge (Typical 39nC)
• Improved dv/dt Capability, High Ruggedness
• 100% Avalanche Tested
• Maximum Junction Temperature Range (150°C)
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
800
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
8
A
Drain Current -Continuous (TC=100°C)
5.0
A
IDM
Drain Current Pulsed
32
A
EAS
Single Pulsed Avalanche Energy
850
mJ
EAR
Repetitive Avalanche Energy
17.8
mJ
ID
Publication Order Number: [MSF8N80]
© Bruckewell Technology Corporation Rev. A -2014
MSF8N80
800V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
dv/dt
Peak Diode Recovery dv/dt
TJ,TSTG
Operating Junction Temperature
TL
PD
TL Maximum Temperature for Soldering @ Lead at 0.125
in(0.318mm) from case for 10 seconds
Power Dissipation (TC = 25 °C)
Derating Factor above 25 °C
Value
Unit
4.5
V/ns
-55~+150
°C
300
°C
59
W
0.48
W/°C
• Drain current limited by maximum junction temperature
Thermal characteristics
Symbol
Parameter
Max.
RθJc
Junction-to-Case
2.1
RθJA
Junction-to-Ambient
62.5
°C/W
On Characteristics
Symbol
Test Conditions
VGS
VDS = VGS, ID = 250μA
*RDS(ON)
VGS = 10 V , ID = 4 A
Off Characteristics
Symbol
Test Conditions
BVDSS
VGS = 0 V , ID = 250μA
△BVDSS /△TJ
ID = 250μA, Referenced to 25°C
IDSS
Units
VDS = 800 V , VGS = 0 V
VDS = 640 V , VC= 125°C
Min
Typ.
Max.
Units
3.0
--
5.0
V
--
1.3
1.6
Ω
Min
Typ.
Max.
Units
800
--
--
V
--
0.6
--
V/°C
--
--
10
μA
100
IGSSF
VGS = 30 V , VDS = 0 V
--
--
100
nA
IGSSR
VGS = -30 V , VDS = 0 V
--
--
-100
nA
Min
Typ.
Max.
Units
--
37
--
nC
--
11
--
nC
Qgd
--
15
--
nC
td(on)
--
50
--
ns
Dynamic Characteristics
Symbol
Test Conditions
Qg
Qgs
VDG = 640 V,ID = 8 A,
VGS = 10 V
tr
VDS = 400 V, ID = 8 A,
--
100
--
ns
td(off)
RG = 10 Ω
--
70
--
ns
--
70
--
ns
tf
Publication Order Number: [MSF8N80]
© Bruckewell Technology Corporation Rev. A -2014
MSF8N80
800V N-Channel MOSFET
Dynamic Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
Units
--
1700
--
pF
--
140
--
pF
--
15
--
pF
Min
Typ.
Max.
Units
IS
--
--
8
ISM
--
--
32
--
--
1.4
V
--
0.7
--
us
--
8.0
--
μC
CISS
COSS
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
CRSS
Source-Drain Diode Characteristics
Symbol
Test Conditions
VSD
trr
Qrr
A
IS = 8 A , VGS = 0 V
IF = 8 A ,VGS = 0 V , dIF/dt=100A/μs
Notes:
1. Repeativity rating : pulse width limited by junction temperature
2. L = 25.0mH, IAS =8.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 8.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Publication Order Number: [MSF8N80]
© Bruckewell Technology Corporation Rev. A -2014
MSF8N80
800V N-Channel MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSF8N80]
© Bruckewell Technology Corporation Rev. A -2014
MSF8N80
800V N-Channel MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSF8N80]
© Bruckewell Technology Corporation Rev. A -2014
MSF8N80
800V N-Channel MOSFET
■Characteristics Test Circuit & Waveform
Fig 12. Resistive Switching Test Circuit & Waveforms
Fig 13. Gate Charge Test Circuit & Waveform
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Publication Order Number: [MSF8N80]
© Bruckewell Technology Corporation Rev. A -2014
MSF8N80
800V N-Channel MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
Publication Order Number: [MSF8N80]
© Bruckewell Technology Corporation Rev. A -2014
MSF8N80
800V N-Channel MOSFET
Disclaimer
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WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
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non-infringement and merchantability.
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Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSF8N80]
© Bruckewell Technology Corporation Rev. A -2014