MSC39N12 30V N-Channel MOSFETs Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • 30V,25A, RDS(ON) =18mΩ @VGS = 10V • Improved dv/dt capability • Fast switching • 100% EAS Guaranteed • Green Device Available • RoHS compliant package Applications • MB / VGA / Vcore • Load Switch • Hand-Held Instrument DFN 3X3 Package Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V Drain Current - Continuous (TC=25°C) 25 A Drain Current - Continuous (TC=100°C) 16 A 100 A 32 mJ 8 A ID IDM Drain Current - Pulsed 1 2 EAS Single Pulse Avalanche Energy IAS Single Pulse Avalanched Current Publication Order Number: [MSC39N12] 2 © Bruckewell Technology Corporation Rev. A -2014 MSC39N12 30V N-Channel MOSFETs Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Value Unit 21 W Power Dissipation - Derate above 25°C 0.17 W/°C TJ Operating Junction Temperature Range -55 to +150 °C TSTG Storage Temperature Range -55 to +150 °C PD Power Dissipation (TC=25°C) Thermal Characteristics Symbol Parameter Typ. Max. RΘjA Thermal Resistance Junction to ambient -- 62 RθJC Thermal Resistance Junction to Case -- 6 Units °C/W Electrical Characteristics (TJ=25℃, unless otherwise noted) Off Characteristics Symbol Parameter Test Conditions Min Drain-Source Breakdown Voltage VGS = VGS, ID = 250uA BVDSS Temperature Coefficient Reference to 25°C , ID = 1mA IGSS Gate-Source Leakage Current VDS = 0 V , VGS = ±20 V IDSS Drain-Source Leakage Current BVDSS △BVDSS /△TJ On Characteristics Symbol Parameter Typ. Max. 30 V 0.04 V/°C ±100 VDS = 30 V , VGS = 0 V , TJ= 25°C 1 VDS = 24 V , VGS = 0 V , TJ= 125°C 10 Test Conditions Min Units Typ. Max. VGS = 10 V, ID = 12 A 14 18 VGS = 4.5 V , ID = 8 A 20 28 1.6 2.5 nA uA Units mΩ RDS(on) Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS = VGS, ID =-250μA △VGS(th) V GS(th) Temperature Coefficient VDS = VGS, ID =-250μA -4 mV/°C gfs Forward Tranconductance VDS = 10 V , IS = 6 A 6.5 S Dynamic and switching Characteristics Symbol Parameter td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Test Conditions 3,4 3,4 Publication Order Number: [MSC39N12] V Min Typ. Max. Units -- 2.8 5 ns ID = 1 A , RG = 6 Ω, -- 7.2 14 ns VGS = 10 V , VDD = 15 V -- 15.8 30 ns -- 4.6 9 ns 3,4 3,4 1.2 © Bruckewell Technology Corporation Rev. A -2014 MSC39N12 30V N-Channel MOSFETs Dynamic and switching Characteristics Symbol Parameter Qg Test Conditions 3,4 Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge CISS Input Capacitance 3,4 3,4 COSS Output Capacitance CRSS Reverse Transfer Capacitance Rg Total Gate Charge VDS = 15 V , ID = 6 A, VGS = 4.5 V VDS = 25 V f = 1 MHz , VGS = 0 V VDS = 0 V , f = 1 MHz , VGS = 0 V Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Test Conditions IS Continuous Source Current VG = VD = 0 V , Force Current Min Typ. Max. Units -- 4.1 8 nC -- 1 2 nC -- 2.1 4 nC -- 345 500 pF -- 55 80 pF -- 32 45 pF -- 3.2 6.4 Ω Min Typ. Max. Units -- -- 25 A -- -- 100 A ISM Pulsed Source Current VSD Diode Forward Voltage VGS = 0 V , IS = 1 A , TJ = 25°C -- -- 1 V trr Reverse Recovery Time VGS = 0 V , IS = 1 A , -- -- -- ns Qrr Reverse Recovery Charge di/dt=100A/μs , TJ=25°C -- -- -- nC Note : 1.Repetitive Rating : Pulsed width limited by maximum junction temperature. 2.VDD=25V,VGS=10V,L=1mH,IAS=8A.,RG=25Ω,Starting TJ=25℃. 3.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4.Essentially independent of operating temperature. Publication Order Number: [MSC39N12] © Bruckewell Technology Corporation Rev. A -2014 MSC39N12 30V N-Channel MOSFETs ■Characteristics Curve FIG.1-CONTINUOUS DRAIN CURRENT VS. TC FIG.2-NORMALIZED RDSON VS. TJ FIG.3-NORMALIZED VTH VS. TJ FIG.4-GATE CHARGE WAVEFORM FIG.5-NORMALIZED TRANSIENT IMPEDANCE FIG.6-MAXIMUM SAFE OPERATION AREA Publication Order Number: [MSC39N12] © Bruckewell Technology Corporation Rev. A -2014 MSC39N12 30V N-Channel MOSFETs ■Characteristics Curve FIG.7-SWITCHING TIME WAVEFORM Publication Order Number: [MSC39N12] FIG.8-EAS WAVEFORM © Bruckewell Technology Corporation Rev. A -2014 MSC39N12 30V N-Channel MOSFETs Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSC39N12] © Bruckewell Technology Corporation Rev. A -2014