STS5N15F4 N-channel 150 V, 0.057Ω, 5 A, SO-8 STripFET™ DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STS5N15F4 150 V < 0.063 Ω 5A ■ N-channel enhancement mode ■ 100% avalanched rated ■ Low gate charge ■ Very low on-resistance SO-8 Application ■ Figure 1. Switching applications Internal schematic diagram Description This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances. Table 1. Device summary Order code Marking Package Packaging STS5N15F4 5U15- SO-8 Tape and reel August 2009 Doc ID 16083 Rev 2 1/11 www.st.com 11 Electrical ratings 1 STS5N15F4 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 150 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 5 A ID Drain current (continuous) at TC=100 °C 3 A IDM(1) Drain current (pulsed) 20 A PTOT Total dissipation at TC = 25 °C 2.5 W Tstg Storage temperature -55 to 150 °C Value Unit 50 °C/W Max value Unit 5 A 125 mJ Operating junction temperature Tj 1. Pulse width limited by safe operating area Table 3. Symbol Rthj-pcb (1) Thermal data Parameter Thermal resistance junction-pcb max 1. When mounted on FR-4 board of 1 inch², 2 oz Cu, t < 10 sec Table 4. Symbol 2/11 Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAS, VDD = 140 V) Doc ID 16083 Rev 2 STS5N15F4 2 Electrical characteristics Electrical characteristics (TJ = 25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 150 V, VDS = 150 V, @125 °C IGSS Gate body leakage current (VDS = 0) VGS = ±20 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 2.5 A V(BR)DSS Table 6. Symbol Min. Typ. Max. 150 Unit V 1 10 µA µA ±100 nA 4 V 0.057 0.063 Ω Min. Typ. Max. Unit 2 Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f = 1 MHz, VGS = 0 - 2710 180 69.5 - pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 75 V, ID = 5 A VGS =10 V Figure 14 on page 7 - 48 10.8 13.7 - nC nC nC Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain - 1.9 - Ω Doc ID 16083 Rev 2 3/11 Electrical characteristics STS5N15F4 Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Symbol ISD ISDM (1) VSD(2) trr Qrr IRRM Test conditions Turn-on delay time Rise time Turn-off delay time Fall time VDD= 75 V, ID= 3 A, RG=4.7 Ω, VGS=10 V Figure 13 on page 7 Typ. Max. Unit - 13.5 5.1 39.7 11.4 - ns ns ns ns Min. Typ. Max Unit Source drain diode Parameter Test conditions Source-drain current - 5 A Source-drain current (pulsed) - 20 A 1.3 V Forward on voltage ISD = 6 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6 A, di/dt = 100 A/µs, VR = 120 V, TJ = 150 °C Figure 15 on page 7 - 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/11 Min. Doc ID 16083 Rev 2 85.2 277.6 8.2 ns nC A STS5N15F4 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM04995v1 ID (A) Tj=150°C Tc=25°C is 100 ea ar (on) S RD ax Sinlge pulse is th ion at er d Op mite Li 10 in m by 1 10ms 100ms 0.1 1s 0.01 0.1 Figure 4. 10 1 100 VDS(V) Output characteristics AM04986v1 ID (A) VGS=10V 70 AM04987v1 ID (A) 70 VDS=10V 60 60 6V 50 50 40 40 30 30 5V 20 20 10 10 4V 0 0 Figure 6. 5 10 15 Normalized BVDSS vs temperature AM04989v1 BVDSS (norm) 0 0 VDS(V) 1.10 Figure 7. 2 4 8 10 VGS(V) Static drain-source on resistance AM04988v1 RDS(on) (Ω) 140 120 ID = 1 mA 6 VGS=10V 100 1.05 80 1.00 60 40 0.95 20 0.90 -50 -25 0 25 50 75 100 125 150 TJ(°C) Doc ID 16083 Rev 2 0 0 1 2 3 4 5 ID(A) 5/11 Electrical characteristics Figure 8. STS5N15F4 Gate charge vs gate-source voltage Figure 9. AM04990v1 VGS (V) 2000 8 2000 6 1500 4 1000 Crss 2 0 20 10 40 30 TJ=25°C f=1MHz 2500 10 0 AM04991v1 C (pF) VDD=75V ID=5A 12 Capacitance variations 500 0 0 50 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM04992v1 VGS(th) (norm) 1.10 Ciss Coss 20 40 60 80 100 120 140 VDS(V) Figure 11. Normalized on resistance vs temperature AM04993v1 RDS(on) (norm) 2.5 ID= 250 µA 1.00 2.0 VGS = 10 V ID = 2.5 A 0.90 1.5 0.80 1.0 0.70 0.5 0.60 0.50 -50 -25 0 25 50 75 100 125 150 TJ(°C) Figure 12. Source-drain diode forward characteristics AM04994v1 VSD (V) TJ=-55°C 0.9 0.8 TJ=25°C 0.7 0.6 TJ=175°C 0.5 0.4 0 6/11 10 20 30 40 50 ISD(A) Doc ID 16083 Rev 2 0 -50 -25 0 25 50 75 100 125 150 TJ(°C) STS5N15F4 3 Test circuits Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 16083 Rev 2 10% AM01473v1 7/11 Package mechanical data 4 STS5N15F4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 8/11 Doc ID 16083 Rev 2 STS5N15F4 Package mechanical data SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.25 a2 MAX. 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 c1 45 (typ.) 1.27 e e3 3.81 0.150 F 3.8 4.0 0.14 L 0.4 1.27 0.015 M 0.244 0.050 0.6 S 0.157 0.050 0.023 8 (max.) Doc ID 16083 Rev 2 9/11 Revision history 5 STS5N15F4 Revision history Table 9. 10/11 Document revision history Date Revision Changes 23-Jul-2009 1 First release 03-Aug-2009 2 Updated figures 6, 7, 10 and 11 Doc ID 16083 Rev 2 STS5N15F4 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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