BUP 313D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 2 Pin 1 G Type VCE IC BUP 313D 1200V 32A Pin 3 C E Package Ordering Code TO-218 AB Q67040-A4228-A2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1200 V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 32 TC = 90 °C 20 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 64 TC = 90 °C 40 IF Diode forward current TC = 90 °C 18 Pulsed diode current, tp = 1 ms IFpuls TC = 25 °C 108 Ptot Power dissipation TC = 25 °C W 200 Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Semiconductor Group Unit 1 °C Dec-02-1996 BUP 313D Maximum Ratings Parameter Symbol DIN humidity category, DIN 40 040 - IEC climatic category, DIN IEC 68-1 - Values Unit E - 55 / 150 / 56 Thermal Resistance Thermal resistance, chip case RthJC ≤ 0.63 Diode thermal resistance, chip case RthJCD ≤ 1.25 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 0.35 mA, Tj = 25 °C V 4.5 5.5 6.5 VGE = 15 V, IC = 15 A, Tj = 25 °C - 2.7 3.2 VGE = 15 V, IC = 15 A, Tj = 125 °C - 3.3 3.9 VGE = 15 V, IC = 30 A, Tj = 25 °C - 3.4 - VGE = 15 V, IC = 30 A, Tj = 125 °C - 4.3 - Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES VCE = 1200 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current mA - - 0.4 IGES VGE = 25 V, VCE = 0 V nA - - 100 AC Characteristics Transconductance gfs VCE = 20 V, IC = 15 A Input capacitance - pF - 1000 1350 - 150 225 - 70 100 Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance 12 Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Dec-02-1996 BUP 313D Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 82 Ω Rise time - 70 100 - 45 70 - 400 530 - 70 95 tr VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 82 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 82 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 82 Ω Free-Wheel Diode Diode forward voltage VF V IF = 15 A, VGE = 0 V, Tj = 25 °C - 2.2 2.8 IF = 15 A, VGE = 0 V, Tj = 125 °C - 1.7 - Reverse recovery time trr ns IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C - - - Tj = 125 °C - 100 150 Reverse recovery charge Qrr µC IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C - 1 1.8 Tj = 125 °C - 3 5.4 Semiconductor Group 3 Dec-02-1996 BUP 313D Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 32 220 W A Ptot 180 IC 160 140 24 20 120 16 100 12 80 60 8 40 4 20 0 0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C TC 160 TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 2 IGBT 10 0 t = 9.0µs p 10 µs A K/W IC ZthJC 10 1 10 -1 100 µs D = 0.50 0.20 1 ms 10 0 10 -2 0.10 0.05 0.02 single pulse 10 ms 0.01 DC 10 -1 0 10 10 1 10 2 10 3 10 -3 -5 10 V VCE Semiconductor Group 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Dec-02-1996 BUP 313D Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C 30 30 A A 26 IC 24 22 20 26 17V 15V 13V 11V 9V 7V IC 24 22 20 18 18 16 16 14 14 12 12 10 10 8 8 6 6 4 4 2 0 2 0 0 1 2 3 V 5 0 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 30 A 26 IC 24 22 20 18 16 14 12 10 8 6 4 2 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Dec-02-1996 BUP 313D Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 82 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 15 A 10 3 10 3 t tdoff t ns tdoff ns tdon tr 10 2 10 2 tr tdon tf tf 10 1 0 5 10 15 20 25 30 A IC 10 1 0 40 50 100 150 Ω 200 Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 82 Ω E par.: VCE = 600V, VGE = ± 15 V, IC = 15 A 10 10 mWs mWs 8 E 7 8 7 Eon 6 6 5 5 4 4 3 300 RG Eon 3 Eoff 2 2 1 1 0 Eoff 0 0 5 10 Semiconductor Group 15 20 25 30 A IC 40 0 6 50 100 150 200 Ω 300 RG Dec-02-1996 BUP 313D Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 15 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 20 V nF VGE 16 C 600 V 14 800 V 10 0 Ciss 12 10 8 Coss 10 -1 6 Crss 4 2 0 0 10 20 30 40 50 60 70 80 100 10 -2 0 5 10 15 20 25 30 V 40 VCE Q Gate Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150°C parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH ICpuls = f (VCE) , Tj = 150°C parameter: VGE = 15 V 10 2.5 I Csc/I C(90°C) ICpuls /IC 6 1.5 4 1.0 2 0.5 0 0.0 0 200 400 Semiconductor Group 600 800 1000 1200 V 1600 VCE 7 0 200 400 600 800 1000 1200 V 1600 VCE Dec-02-1996 BUP 313D Typ. forward characteristics Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IF = f (VF) parameter: Tj Diode 10 1 30 A K/W 26 IF 24 ZthJC 10 0 22 20 18 Tj=125°C 16 Tj=25°C 10 -1 14 D = 0.50 12 0.20 0.10 10 0.05 10 -2 8 0.02 6 0.01 4 single pulse 2 0 0.0 0.5 1.0 1.5 2.0 V 3.0 VF Semiconductor Group 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Dec-02-1996