BUP 314S Preliminary data IGBT • High switching speed • Very low switching losses • Low tail current • Latch-up free • Avalanche rated Pin 2 Pin 1 G Type VCE IC BUP 314S 1200V 25A Pin 3 C E Package Ordering Code TO-218 AB C67040-A4207-A2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values Unit 1200 V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 25 TC = 90 °C 17 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 50 TC = 90 °C 34 EAS Avalanche energy, single pulse mJ IC = 25 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C 65 Ptot Power dissipation TC = 25 °C W 300 Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Semiconductor Group 1 °C Feb-07-1997 BUP 314S Preliminary data Maximum Ratings Parameter Symbol DIN humidity category, DIN 40 040 - IEC climatic category, DIN IEC 68-1 - Values E Unit - 55 / 150 / 56 Thermal Resistance ≤ 0.42 RthJC Thermal resistance, chip case K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Collector-emitter breakdown voltage V(BR)CES VGE = 0 V, IC = 0.3 mA, Tj = 25 °C V 1200 - - 4.5 5.5 6.5 VGE = 15 V, IC = 15 A, Tj = 25 °C - 5.5 7.6 VGE = 15 V, IC = 15 A, Tj = 125 °C - 4.6 - VGE = 15 V, IC = 30 A, Tj = 25 °C - 8 - VGE = 15 V, IC = 30 A, Tj = 125 °C - 6.6 - Gate threshold voltage VGE(th) VGE = VCE, IC = 0.35 mA, Tj = 25 °C Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES VCE = 1200 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current - - 0.8 IGES VGE = 25 V, VCE = 0 V Semiconductor Group mA nA - 2 - 100 Feb-07-1997 BUP 314S Preliminary data AC Characteristics Transconductance gfs VCE = 20 V, IC = 15 A Input capacitance 8.5 pF - 1950 2600 - 180 270 - 120 180 Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance 12 Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 47 Ω Rise time - 65 100 - 60 90 - 420 560 - 70 95 tr VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 47 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 47 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 47 Ω Semiconductor Group 3 Feb-07-1997 BUP 314S Preliminary data Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 26 320 A W Ptot 22 IC 240 20 18 200 16 14 160 12 10 120 8 80 6 4 40 2 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 °C TC 160 TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 2 IGBT 10 0 tp = 18.0µs A K/W IC ZthJC 100 µs 10 1 10 -1 1 ms D = 0.50 0.20 10 ms 10 0 10 -2 0.10 0.05 0.02 0.01 DC 10 -1 0 10 10 1 10 2 10 single pulse 3 10 -3 -5 10 V VCE Semiconductor Group 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Feb-07-1997 BUP 314S Preliminary data Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C IC = f (VCE) parameter: tp = 80 µs, Tj = 125 °C 55 55 A IC 45 40 A 17V 15V 13V 11V 9V 7V IC 45 40 35 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0 2 4 6 V 10 VCE 0 0 17V 15V 13V 11V 9V 7V 2 4 6 V 10 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp=80µs,VCE=20 V 60 A 50 IC 45 40 35 30 25 20 15 10 5 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Feb-07-1997 BUP 314S Preliminary data Typ. switching time Typ. switching time t = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, IC = 15 A par.: VCE = 600 V, VGE = ± 15 V, RG = 47Ω 10 4 10 3 ns t tdoff t ns 10 2 10 3 tdoff 10 2 tdon tr tf tr tdon tf 10 1 0 5 10 15 20 25 30 A IC 10 1 0 40 20 40 60 80 100 120 140 160 Ω Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, IC = 15 A par.: VCE = 600 V, VGE = ± 15 V, RG = 48.9Ω 8.0 8.0 mWs mWs E 200 RG E 6.0 6.0 Eon 5.0 5.0 4.0 4.0 3.0 3.0 2.0 Eon 2.0 Eoff Eoff 1.0 1.0 0.0 0.0 0 5 10 Semiconductor Group 15 20 25 30 A IC 40 0 20 40 60 80 100 120 140 160 Ω 200 RG 6 Feb-07-1997 BUP 314S Preliminary data Typ. capacitances Reverse biased safe operating area C = f (VCE) parameter: VGE = 0 V, f = 1 MHz ICpuls = f (VCE) , Tj = 150°C parameter: VGE = 15 V 10 4 2.5 pF ICpuls/IC C Ciss 10 3 1.5 1.0 Coss Crss 10 2 0.5 0.0 10 1 0 0 5 10 15 20 25 30 V 40 VCE 200 400 600 800 1000 1200 V 1600 VCE Short circuit safe operating area ICsc = f (VCE) , Tj = 150°C parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH 10 ICsc/IC(90°C) 6 4 2 0 0 200 400 Semiconductor Group 600 800 1000 1200 V 1600 VCE 7 Feb-07-1997