Transistors IC SMD Type 600V N-Channel MOSFET KQB5N60 TO-263 Unit: mm 5.0A, 600 V. RDS(ON) = 2.0 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Low gate charge (typical 16nC) +0.1 1.27-0.1 +0.2 4.57-0.2 100% avalanche tested 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 Fast switching 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 5 .6 0 Low Crss(typical 9.0pF) +0.2 0.4-0.2 gate 11Gate drain 22Drain source 33Source Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Symbol Rating Unit VDSS 600 V 5 A 3.15 A 20 A Drain Current Continuous (TC=25 ) ID Drain Current Continuous (TC=100 ) Drain Current Pulsed *1 IDM Gate-Source Voltage VGSS 30 V Single Pulsed Avalanche Energy*2 EAS 300 mJ Avalanche Current *1 IAR 5 A Repetitive Avalanche Energy *1 EAR 12 mJ Peak Diode Recovery dv/dt *3 dv/dt 4.5 V/ns PD 3.13 W 120 W Power dissipation @ TA=25 Power dissipation @ TC=25 PD 0.96 Derate above 25 Operating and Storage Temperature TJ, TSTG -55 to150 TL 300 Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds Thermal Resistance Junction to Case R JC Thermal Resistance Junction to Ambient *4 R Thermal Resistance Junction to Ambient R W/ 1.04 /W JA 40 /W JA 62.5 /W *1 Repetitive Rating:Pulse width limited by maximum junction temperature *2 l=22mH,IAS=5.0A,VDD=50V,RG=25 ,Startion TJ=25 *3 ISD 5.0A,di/dt 200A/ S,VDD BVDSS,Startiong TJ=25 *4 When mounted on the minimum pad size recommended (PCB Mount) www.kexin.com.cn 1 Transistors IC SMD Type KQB5N60 Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Min Max 600 VGS = 0 V, ID = 250 A Unit V 0.6 ID = 250 A, Referenced to 25 IDSS Typ mV/ VDS = 600 V, VGS = 0 V 1 A A VDS = 480 V, TC=125 10 Gate-Body Leakage Current,Forward IGSSF VGS = 30 V, VDS = 0 V 100 nA Gate-Body Leakage Current,Reverse IGSSR VGS =-30 V, VDS = 0 V -100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 5.0 V Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 2.5A 1.57 VDS = 50 V, ID = 2.5A * 4.0 Forward Transconductance gFS Input Capacitance Ciss 3.0 VDS = 25 V, VGS = 0 V,f = 1.0 MHz 2.0 S 560 730 pF Output Capacitance Coss 80 100 pF Reverse Transfer Capacitance Crss 9 12 pF Turn-On Delay Time td(on) 13 35 ns Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time 2 Testconditons VDD = 300 V, ID = 5.0A,RG=25 * tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480 V, ID =5.0A,VGS = 10 V * 45 100 ns 35 80 ns 40 90 ns 16 20 nC 3.5 nC 7.8 nC Maximum Continuous Drain-Source Diode Forwrad Current IS 5.0 A Maximum Pulsed Drain-Source Diode Forward Current ISM 20 A Drain-Source Diode Forward Voltage VSD 1.4 V Diode Reverse Recovery Time trr Diode Reverse Recovery Current Qrr * Pulse Test: Pulse Width 2.0% www.kexin.com.cn 300 s, Duty Cycle VGS = 0 V, IS = 5.0 A * VGS = 0 V,dIF/dt = 100 A/ s,IS=5.0A 270 1.9 ns C