SEMIHOW HFG1N80

Preliminary
BVDSS = 800 V
RDS(on) typ = 13 Ω
HFG1N80
ID = 1.0 A
800V N-Channel MOSFET
TO-92L
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
1.Gate 2. Drain 3. Source
D
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 7.5 nC (Typ.)
 Extended Safe Operating Area
G
 Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V
Absolute Maximum Ratings
Symbol
S
TC=25℃ unless otherwise specified
Parameter
Value
Units
800
V
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25℃)
1.0
A
Drain Current
– Continuous (TC = 100℃)
0.63
A
IDM
Drain Current
– Pulsed
4.0
A
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
90
mJ
IAR
Avalanche Current
(Note 1)
1.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
4.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.0
V/ns
PD
Power Dissipation (TA = 25℃) *
2.5
W
Power Dissipation (TC = 25℃)
- Derate above 25℃
45
W
0.36
W/℃
-55 to +150
℃
300
℃
(Note 1)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RθJC
Junction-to-Case
--
2.78
RθJA
Junction-to-Ambient*
--
50
RθJA
Junction-to-Ambient
--
110
Units
℃/W
* When mounted on the minimum pad size recommended (PCB Mount)
◎ SEMIHOW REV.A0,Aug 2008
HFG1N80_Preliminary
Aug 2008
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 ㎂
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.5 A
--
13
16
Ω
VGS = 0 V, ID = 250 ㎂
800
--
--
V
ID = 250 ㎂, Referenced to25℃
--
1.0
--
V/℃
VDS = 800 V, VGS = 0 V
--
--
1
㎂
VDS = 640 V, TC = 125℃
--
--
10
㎂
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS Breakdown Voltage Temperature
Coefficient
/ΔTJ
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
㎁
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
㎁
--
150
195
㎊
--
20
26
㎊
--
5.5
7.2
㎊
--
12
30
㎱
--
40
90
㎱
--
25
60
㎱
--
45
100
㎱
--
7.5
10.0
nC
--
1.2
--
nC
--
4.5
--
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 400 V, ID = 1.0 A,
RG = 25 Ω
(Note 4,5)
VDS = 640 V, ID = 1.0 A,
VGS = 10 V
(Note 4,5)
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
1.0
ISM
Pulsed Source-Drain Diode Forward Current
--
--
4.0
VSD
Source-Drain Diode Forward Voltage
IS = 1.0 A, VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
--
310
--
㎱
Qrr
Reverse Recovery Charge
IS = 1.0 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
0.8
--
μC
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=170mH, IAS=1.0A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤1.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Aug 2008
HFG1N80_Preliminary
Electrical Characteristics TC=25 °C