Preliminary BVDSS = 800 V RDS(on) typ = 13 Ω HFG1N80 ID = 1.0 A 800V N-Channel MOSFET TO-92L FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source D Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7.5 nC (Typ.) Extended Safe Operating Area G Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V Absolute Maximum Ratings Symbol S TC=25℃ unless otherwise specified Parameter Value Units 800 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 1.0 A Drain Current – Continuous (TC = 100℃) 0.63 A IDM Drain Current – Pulsed 4.0 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 90 mJ IAR Avalanche Current (Note 1) 1.0 A EAR Repetitive Avalanche Energy (Note 1) 4.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TA = 25℃) * 2.5 W Power Dissipation (TC = 25℃) - Derate above 25℃ 45 W 0.36 W/℃ -55 to +150 ℃ 300 ℃ (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol Parameter Typ. Max. RθJC Junction-to-Case -- 2.78 RθJA Junction-to-Ambient* -- 50 RθJA Junction-to-Ambient -- 110 Units ℃/W * When mounted on the minimum pad size recommended (PCB Mount) ◎ SEMIHOW REV.A0,Aug 2008 HFG1N80_Preliminary Aug 2008 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 0.5 A -- 13 16 Ω VGS = 0 V, ID = 250 ㎂ 800 -- -- V ID = 250 ㎂, Referenced to25℃ -- 1.0 -- V/℃ VDS = 800 V, VGS = 0 V -- -- 1 ㎂ VDS = 640 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 150 195 ㎊ -- 20 26 ㎊ -- 5.5 7.2 ㎊ -- 12 30 ㎱ -- 40 90 ㎱ -- 25 60 ㎱ -- 45 100 ㎱ -- 7.5 10.0 nC -- 1.2 -- nC -- 4.5 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 400 V, ID = 1.0 A, RG = 25 Ω (Note 4,5) VDS = 640 V, ID = 1.0 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 1.0 ISM Pulsed Source-Drain Diode Forward Current -- -- 4.0 VSD Source-Drain Diode Forward Voltage IS = 1.0 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 310 -- ㎱ Qrr Reverse Recovery Charge IS = 1.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 0.8 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=170mH, IAS=1.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤1.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Aug 2008 HFG1N80_Preliminary Electrical Characteristics TC=25 °C