IC
IC
SMD Type
HEXFET Power MOSFET
KRF7509
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
N-Channel
P-Channel
Unit
VDS
30
-30
V
Continuous Drain Current, VGS @ 10V @ Ta = 25
ID
2.7
-2
Continuous Drain Current, VGS @ 10V @ Ta = 70
ID
2.1
-1.6
Pulsed Drain Current *1
IDM
21
-16
Drain-Source Voltage
Power Dissipation
@Ta= 25
Power Dissipation
@Ta= 70
1.25
PD
0.8
10
Linear Derating Factor
Gate-to-Source Voltage
20
VGS
Gate-to-Source Voltage Single Pulse tp<10 S
VGSM
30
Peak Diode Recovery dv/dt *2
dv/dt
5.0
TJ, TSTG
-55 to + 150
Junction and Storage Temperature Range
Maximum Junction-to-Ambient *3
R
100
JA
A
W
m W/
V
V/ns
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD
1.7A, di/dt
120A/
s, VDD
V(BR)DSS, TJ
150
P-Channel ISD
-1.2A, di/dt
160A/
s, VDD
V(BR)DSS, TJ
150
*3 Surface mounted on FR-4 board, t
10sec.
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IC
IC
SMD Type
KRF7509
Electrical Characteristics TJ = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS = 0V, ID = -250 A
P-Ch
-30
V(BR)DSS/
ID = 1mA,Reference to 25
N-Ch
0.059
TJ
ID = -1mA,Reference to 25
P-Ch
0.039
V(BR)DSS
RDS(on)
VGS(th)
gfs
Gate-to-Source Forward Leakage
IDSS
IGSS
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain ("Miller") Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
td(off)
Turn-Off Delay Time
Fall Time
VGS =10V, ID = 1.7A*1
VGS = 4.5V, ID = 0.85A*1
VGS = -10V, ID = -1.2A*1
VGS = -4.5V, ID = -0.6A*1
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Body Diode)
Body Diode) *2
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IS
ISM
Max
V
V/
0.14 0.175
P-Ch
VDS = VGS, ID = 250 A
N-Ch
1.0
P-Ch
-1.0
VDS = 10V, ID = 0.85A*1
N-Ch
1.9
VDS = -10V, ID = -0.6A*1
P-Ch
0.92
VDS = 24V, VGS = 0V
N-Ch
0.17
0.20
0.30
0.40
V
S
VDS = -24V, VGS = 0V
P-Ch
1.0
VDS = 24V, VGS = 0V, TJ = 125
N-Ch
-1.0
VDS = -24V, VGS = 0V, TJ = 125
P-Ch
25
N-Ch
-25
VGS =
20V
P-Ch
A
100
N-Channel
N-Ch
7.8
12
ID = 1.7A,VDS = 24V,VGS =10V
P-Ch
7.5
11
N-Ch
1.2
1.8
P-Channel
P-Ch
1.3
1.9
ID = -1.2A,VDS = -24V,VGS = -10V
N-Ch
2.5
3.8
P-Ch
2.5
3.7
N-Channel
N-Ch
4.7
VDD = 15V,ID = 1.7A,RG = 6.1
P-Ch
9.7
RD=8.7
N-Ch
10
P-Channel
P-Ch
12
VDD = -15V,ID = -1.2A,RG = 6.2
N-Ch
12
RD=12
Unit
0.09 0.110
N-Ch
VDS = VGS, ID = -250 A
tf
Continuous Source Current
2
30
Gate Threshold Voltage
Drain-to-Source Leakage Current
Typ
N-Ch
RDS(on)
Forward Transconductance
Min
VGS = 0V, ID = 250 A
Static Drain-to-Source On-Resistance
Pulsed Source Current
Testconditons
Symbol
P-Ch
19
N-Ch
5.3
P-Ch
9.3
N-Channel
N-Ch
210
VGS = 0V,VDS = 25V,f = 1.0MHz
P-Ch
180
N-Ch
80
P-Channel
P-Ch
87
VGS = 0V,VDS = -25V,f = 1.0MHz
N-Ch
32
P-Ch
42
nC
ns
pF
N-Ch
1.25
P-Ch
-1.25
N-Ch
21
P-Ch
-16
A
IC
IC
SMD Type
KRF7509
Electrical Characteristics TJ = 25
Parameter
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse RecoveryCharge
Qrr
*1 Pulse width
300 s; duty cycle
Testconditons
Symbol
Min
Typ
Max
TJ = 25 , IS = 1.7A, VGS = 0V*1
N-Ch
1.2
TJ = 25 , IS = -1.8A, VGS = 0V*1
P-Ch
-1.2
N-Channel
TJ = 25 , IF =1.7A,di/dt = 100A/
s*1
P-Channel
TJ=25 , IF=-1.2A,di/dt=-100A/
s*1
N-Ch
40
60
P-Ch
30
45
N-Ch
48
72
P-Ch
37
55
Unit
V
ns
nC
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
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