NPN Silicon RF Transistor ● Common emitter IF/RF amplifier ● Low feedback capacitance due to shield diffusion BF 599 Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BF 599 NB Q62702-F979 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 25 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 4 Collector current IC 25 Base current IB 5 Total power dissipation, TA ≤ 25 ˚C Ptot 280 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Rth JA ≤ mA Thermal Resistance Junction - ambient2) 1) 2) 450 K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BF 599 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR) CE0 25 – – V Collector cutoff current VCB = 20 V, IE = 0 ICB0 – – 100 nA DC current gain IC = 7 mA, VCE = 10 V hFE 38 70 – – Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA VCE sat – 0.15 – V Base-emitter voltage IC = 7 mA, VCE = 10 V VBE – 0.78 – Transition frequency IC = 5 mA, VCE = 10 V, f = 100 MHz fT – 550 – MHz Collector-base capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Ccb – 0.35 – pF Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Cce – 0.68 – Optimum power gain IC = 7 mA, VCE = 10 V, f = 35 MHz Gpe opt – 43 – dB Forward transfer admittance IC = 7 mA, VCE = 10 V, f = 35 MHz I y21e I – 175 – mS AC Characteristics Semiconductor Group 2 BF 599 Total power dissipation Ptot = f (TA) DC current gain hFE = f (IC) VCE = 10 V Collector current IC = f (VBE) VCE = 10 V Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 Semiconductor Group 3 BF 599 Collector cutoff current ICB0 = f (TA) VCB = 20 V Transition frequency fT = f (IC) f = 100 MHz Collector-base capacitance Ccb = f (VCB) f = 1 MHz Forward transfer admittance Iy21e I = f (IC) Semiconductor Group 4