BF 414 NPN Silicon RF Transistor ● BF 414 For low-noise, common base VHF and FM stages 2 3 1 Type Marking Ordering Code BF 414 – Q62702-F517 Pin Configuration 1 2 3 C B Package1) TO-92 E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 30 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 4 Collector current IC 25 Base current IB 3 Total power dissipation, TA ≤ 45 ˚C Ptot 300 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 55 … + 150 Rth JA ≤ mA Thermal Resistance Junction - ambient 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 350 K/W BF 414 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Values Symbol Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 2 mA, IB = 0 V(BR) CE0 30 – – Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR) CB0 40 – – Emitter-base breakdown voltage IE = 10 µA V(BR) EB0 4 – – Collector cutoff current VCB = 20 V ICB0 – – 60 nA DC current gain IC = 4 mA, VCE = 10 V hFE 30 80 – – – – 400 560 – – V AC Characteristics Transition frequency IC = 1 mA, VCE = 10 V, f = 100 MHz IC = 5 mA, VCE = 10 V, f = 100 MHz fT Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Cce – 0.1 – pF Noise figure IC = 5 mA, VCE = 10 V, f = 100 MHz RS = 60 Ω F – 3 – dB Semiconductor Group 2 MHz