NPN Silicon RF Transistor ● For linear broadband amplifier applications up to 500 MHz ● SAW filter driver in TV tuners BF 799 Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BF 799 LK Q62702-F935 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 20 V Collector-emitter reverse voltage VCES 30 Collector-base voltage VCB0 30 Emitter-base voltage VEB0 3 Collector current IC 35 Peak collector current ICM 50 Peak base current IBM 15 Total power dissipation, TA ≤ 25 ˚C Ptot 280 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Rth JA ≤ mA Thermal Resistance Junction - ambient2) 1) 2) 450 K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BF 799 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR) CE0 20 – – Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR) CB0 30 – – Emitter-base breakdown voltage IE = 10 µA V(BR) EB0 3 – – Collector cutoff current VCB = 20 V ICB0 – – 100 DC current gain, VCE = 10 V IC = 5 mA IC = 20 mA hFE 35 40 95 100 – 250 Collector-emitter saturation voltage IC = 20 mA, IB = 2 mA VCE sat – 0.15 0.5 Base-emitter saturation voltage IC = 20 mA, IB = 2 mA VBE sat – – 0.95 V nA – V AC Characteristics Transition frequency IC = 5 mA, VCE = 10 V, f = 100 MHz IC = 20 mA, VCE = 8 V, f = 100 MHz fT Output capacitance VCB = 10 V, f = 1 MHz, IE = 0 MHz – – 800 1100 – – Cob – 0.96 – Collector-base capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Ccb – 0.7 – Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Cce – 0.28 – Noise figure IC = 5 mA, VCE = 10 V, f = 100 MHz RS = 50 Ω F – 3 – dB Output conductance IC = 20 mA, VCE = 10 V, f = 35 MHz g22e – 60 – µS Semiconductor Group 2 pF BF 799 Total power dissipation Ptot = f (TA) Transition frequency fT = f (IC) f = 100 MHz Collector-base capacitance Ccb = f (VCB) f = 1 MHz Semiconductor Group 3