NTD4910N D

NTD4910N
Power MOSFET
30 V, 37 A, Single N−Channel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
http://onsemi.com
RDS(on) MAX
V(BR)DSS
Applications
• CPU Power Delivery
• DC−DC Converters
9.0 mW @ 10 V
30 V
D
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
"20
V
ID
11.2
A
Parameter
TA = 25°C
TA = 100°C
Power Dissipation
(RqJA) (Note 1)
PD
2.6
W
4
4
TA = 25°C
Steady
State
Continuous Drain
Current (RqJC)
(Note 1)
ID
TA = 100°C
tp=10ms
Current Limited by Package
4
A
8.2
5.8
1 2
1
TA = 25°C
PD
1.37
W
3
TC = 25°C
ID
37
A
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
TC = 100°C
Power Dissipation
(RqJC) (Note 1)
Pulsed Drain Current
S
7.9
26
TC = 25°C
PD
27.3
W
TA = 25°C
IDM
152
A
TA = 25°C
IDmaxPkg
60
A
Operating Junction and Storage Temperature
Source Current (Body Diode)
TJ, Tstg
−55 to
175
°C
IS
23
A
Drain to Source dV/dt
dV/dt
7.0
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
L = 0.1 mH, IL(pk) = 22.5 A, RG = 25 W)
EAS
25.3
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
°C
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
2 3
1
2
3
CASE 369AD
CASE 369D
IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
AYWW
49
10NG
Power Dissipation
(RqJA) (Note 2)
TA = 25°C
N−Channel
G
AYWW
49
10NG
Continuous Drain
Current (RqJA)
(Note 2)
37 A
13 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Continuous Drain
Current (RqJA)
(Note 1)
ID MAX
4
Drain
AYWW
49
10NG
•
•
•
•
2
1 2 3
1 Drain 3
Gate Source Gate Drain Source 1 2 3
Gate Drain Source
A
Y
WW
4910N
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 2
1
Publication Order Number:
NTD4910N/D
NTD4910N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
RqJC
5.5
°C/W
Junction−to−Case (Drain)
Junction−to−Tab (Drain)
RqJC−TAB
4.3
Junction−to−Ambient − Steady State (Note 3)
RqJA
58.5
Junction−to−Ambient − Steady State (Note 4)
RqJA
109.7
3. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
V
15
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
VGS = 0 V,
VDS = 24 V
TJ = 25°C
mV/°C
1.0
TJ = 125°C
mA
10
"100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
gFS
1.6
2.2
4.0
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
1.0
ID = 30 A
7.5
ID = 15 A
7.5
ID = 30 A
10.6
ID = 15 A
10.6
VDS = 1.5 V, ID = 30 A
V
mV/°C
9.0
mW
13
40
S
1203
pF
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
12.5
Total Gate Charge
QG(TOT)
6.8
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz,
VDS = 15 V
VGS = 4.5 V, VDS = 15 V,
ID = 30 A
460
nC
1.95
3.9
1.1
VGS = 10 V, VDS = 15 V,
ID = 30 A
15.4
nC
11.6
ns
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
21.8
16.5
4.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
http://onsemi.com
2
NTD4910N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Turn−On Delay Time
Rise Time
Symbol
td(on)
tr
Turn−Off Delay Time
Fall Time
Test Condition
td(off)
Min
Typ
Max
ns
7.3
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
Unit
19.5
20.2
2.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.91
TJ = 125°C
0.82
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Time
VGS = 0 V,
IS = 30 A
1.1
ns
27
VGS = 0 V, dIs/dt= 100 A/ms,
IS = 30 A
V
14
13
QRR
17
nC
Source Inductance (Note 7)
LS
2.99
nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK (Note 7)
LD
Gate Inductance (Note 7)
LG
4.9
Gate Resistance
RG
1.0
PACKAGE PARASITIC VALUES
TA = 25°C
1.88
2.0
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
ORDERING INFORMATION
Package
Shipping†
NTD4910NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD4910N−1G
IPAK
(Pb−Free)
75 Units / Rail
NTD4910N−35G
IPAK Trimmed Lead
(Pb−Free)
75 Units / Rail
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
3
NTD4910N
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
10 V
7V
4.5
50
4.2
4.0
40
3.8 V
60
TJ = 25°C
VGS = 3.6 V
VDS = 10 V
ID, DRAIN CURRENT (A)
60
3.4 V
3.2 V
30
3.0 V
20
2.8 V
2.6 V
10
50
40
30
TJ = 25°C
20
TJ = 125°C
10
2.4 V
TJ = −55°C
0
0
1
2
3
4
2.0
3.0
3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.020
ID = 30 A
TJ = 25°C
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
3.0
2.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
4.0
5.0
6.0
7.0
8.0
9.0
VGS (V)
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
4.0
0.014
0.013
TJ = 25°C
0.012
VGS = 4.5 V
0.011
0.010
0.009
0.008
VGS = 10 V
0.007
0.006
0.005
0.004
15
25
35
45
55
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS = 0 V
1.8
ID = 30 A
VGS = 10 V
TJ = 150°C
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
10,000
2.0
1.6
1.4
1.2
1.0
1000
TJ = 125°C
100
TJ = 85°C
0.8
0.6
−50 −25
10
0
25
50
75
100
125
150
175
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
4
30
NTD4910N
TYPICAL CHARACTERISTICS
VGS = 0 V
TJ = 25°C
Ciss
1200
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
1600
800
Coss
400
Crss
0
0
5
10
15
20
25
15.0
10.5
9.0
7.5
Qgd
6.0
Qgs
4.5
VDD = 15 V
VGS = 10 V
ID = 30 A
3.0
1.5
0
0
30
2
4
8
6
10
12
14
16
18
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
30
IS, SOURCE CURRENT (A)
VGS = 0 V
VDD = 15 V
ID = 15 A
VGS = 10 V
t, TIME (ns)
QT
12.0
1000
td(off)
100
tf
tr
10
td(on)
25
20
15
TJ = 125°C
10
5
TJ = 25°C
0
1
1
10
0
100
0.2
0.4
0.6
0.8
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
ID, DRAIN CURRENT (A)
TJ = 25°C
13.5
100
10 ms
100 ms
1 ms
10
VGS = 10 V
Single Pulse
TC = 25°C
1
10 ms
dc
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.1
1
10
30
ID = 24 A
25
20
15
10
5
0
25
100
50
75
100
125
150
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
175
NTD4910N
TYPICAL CHARACTERISTICS
100
R(t) (°C/W)
10
Duty Cycle = 50%
20%
10%
5%
2%
1
1%
0.1
Single Pulse
0.01
Psi Tab−A
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
PULSE TIME (sec)
Figure 13. FET Thermal Response
70
60
VDS = 1.5 V
50
GFS (S)
0.001
40
30
20
10
0
0
10
20
30
40
ID (A)
Figure 14. GFS vs. ID
http://onsemi.com
6
50
60
100
1000
NTD4910N
PACKAGE DIMENSIONS
3.5 MM IPAK, STRAIGHT LEAD
CASE 369AD
ISSUE B
E
E3
L2
NOTES:
1.. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2.. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm FROM TERMINAL TIP.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD GATE OR MOLD FLASH.
A
E2
A1
D2
D
L1
L
T
SEATING
PLANE
A1
b1
e
2X
A2
3X
E2
b
0.13
M
T
D2
DIM
A
A1
A2
b
b1
D
D2
E
E2
E3
e
L
L1
L2
MILLIMETERS
MIN
MAX
2.19
2.38
0.46
0.60
0.87
1.10
0.69
0.89
0.77
1.10
5.97
6.22
4.80
−−−
6.35
6.73
4.57
5.45
4.45
5.46
2.28 BSC
3.40
3.60
−−−
2.10
0.89
1.27
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
OPTIONAL
CONSTRUCTION
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
3 PL
0.13 (0.005)
M
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
http://onsemi.com
7
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
NTD4910N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
A
E
b3
c2
B
4
L3
Z
D
1
2
H
DETAIL A
3
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
L4
b2
e
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
8
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTD4910N/D