BBY56... Silicon Tuning Diode • Excellent linearity • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread BBY56-02W BBY56-03W 1 2 Type BBY56-02W BBY56-03W Package SCD80 SOD323 Configuration single single Maximum Ratings at TA = 25°C, unless otherwise specified Symbol Parameter LS(nH) Marking 0.6 66 1.8 6 red Value Unit Diode reverse voltage VR 10 V Forward current IF 20 mA Operating temperature range Top -55 ... 150 °C Storage temperature Tstg -55 ... 150 1 Jan-13-2004 BBY56... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Reverse current IR nA VR = 6 V - - 5 VR = 6 V, T A = 85 °C - - 100 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 37 40 43 VR = 2 V, f = 1 MHz 22 - 25 VR = 3 V, f = 1 MHz 14.8 15.8 16.8 VR = 4 V, f = 1 MHz - 12.1 - VR = 1 V, VR = 3 V, f = 1 MHz 2.15 2.53 - VR = 1 V, VR = 4 V, f = 1 MHz - 3.3 - - 0.25 - Capacitance ratio CT1/CT3 Series resistance rS Ω VR = 1 V, f = 470 MHz 2 Jan-13-2004 BBY56... Diode capacitance CT = ƒ (VR) f = 1MHz Temperature coefficient of the diode capacitance TCc = ƒ (VR) f = 1 MHz 100 0.0012 pF 1/K 0.001 80 0.0009 TCc CT 70 0.0008 60 0.0007 50 0.0006 40 0.0005 30 0.0004 20 0.0003 10 0 0 0.0002 1 2 V 3 0.0001 0 5 1 2 3 4 V 6 VR VR Reverse current IR = ƒ(VR) TA = Parameter 10 -9 125 °C A 10 -10 IR 85 °C 10 -11 60 °C 25 °C 10 -12 10 -13 1 2 3 V 5 VR 3 Jan-13-2004