BBY55-05W Silicon Tuning Diode 3 Excellent linearity High Q hyperabrupt tuning diode Low series inductance Designed for low tuning voltage operation 2 for VCO's in mobile communications equipment 1 Very low capacitance spread VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY55-05W C5s Pin Configuration 1=A1 2=A2 Package 3=C1/C2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 16 V Forward current IF 20 mA Operating temperature range Top -55 ... 150 °C Storage temperature Tstg -55 ... 150 1 Value Unit Jul-12-2001 BBY55-05W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 3 IR - - 100 DC characteristics Reverse current nA VR = 15 V Reverse current VR = 15 V, TA = 65 °C AC Characteristics Diode capacitance pF CT VR = 2 V, f = 1 MHz 14 15 16 VR = 4 V, f = 1 MHz 10 11 12 VR = 10 V, f = 1 MHz 5.5 6 6.5 CT2/ CT10 2 2.5 3 - rs - 0.15 0.4 CC - 0.1 - pF Ls - 1.4 - nH Capacitance ratio VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance 2 Jul-12-2001 BBY55-05W Diode capacitance CT = f (VR) Reverse current IR = f (VR ) f = 1MHz TA = Parameter 10 -9 30 pF A 24 80°C 10 20 -10 IR CT 22 18 60°C 16 14 25°C 12 10 -11 10 8 6 4 2 0 0 2 4 6 8 10 V 10 -12 0 14 2 4 6 8 10 12 14 VR 18 VR Series resistance rs = f(VR ) Capacitance change C = f(TA) f = 470 MHz f = 1 MHz 0.5 4 % 1V Ohm 2V ∆C 2 rs V 0.3 6V 10V 1 0 0.2 -1 -2 0.1 0 0 2 4 6 8 10 V 14 VR -3 C=(C(TA)-C(25°C))/C(25°C) -4 -50 -30 -10 10 30 50 70 °C 110 TA 3 Jul-12-2001